Patent application number | Description | Published |
20080283490 | PROTECTION LAYER FOR FABRICATING A SOLAR CELL - A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer. | 11-20-2008 |
20080314443 | BACK-CONTACT SOLAR CELL FOR HIGH POWER-OVER-WEIGHT APPLICATIONS - A solar cell is described. The solar cell is fabricated on a substrate, the substrate having a front surface and a back surface. The substrate includes, at the front surface, a first region having a first global thickness and a second region having a second global thickness. The second global thickness is greater than the first global thickness. A plurality of alternating n-type and p-type doped regions is disposed at the back surface of the substrate. | 12-25-2008 |
20100071765 | METHOD FOR FABRICATING A SOLAR CELL USING A DIRECT-PATTERN PIN-HOLE-FREE MASKING LAYER - A method for fabricating a solar cell is described. The method includes first providing a substrate having a dielectric layer disposed thereon. A pin-hole-free masking layer is then formed above the dielectric layer. Finally, without the use of a mask, the pin-hole-free masking layer is patterned to form a patterned pin-hole-free masking layer. | 03-25-2010 |
20100129955 | PROTECTION LAYER FOR FABRICATING A SOLAR CELL - A method for fabricating a solar cell is described. The method includes first providing, in a process chamber, a substrate having a light-receiving surface. An anti-reflective coating (ARC) layer is then formed, in the process chamber, above the light-receiving surface of the substrate. Finally, without removing the substrate from the process chamber, a protection layer is formed above the ARC layer. | 05-27-2010 |
20110126898 | SOLAR CELL CONTACT FORMATION USING LASER ABLATION - The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes. | 06-02-2011 |
20110214719 | METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF - Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers. | 09-08-2011 |
20110240105 | LEAKAGE PATHWAY LAYER FOR SOLAR CELL - Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described. | 10-06-2011 |
20140305501 | METHOD OF FABRICATING A BACK-CONTACT SOLAR CELL AND DEVICE THEREOF - Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers. | 10-16-2014 |