Patent application number | Description | Published |
20090186226 | MESOSTRUCTURED ORGANIC-INORGANIC HYBRID MATERIAL - An organic/inorganic hybrid material (OIHM) that consists of elementary spherical particles is described, whereby each of said spherical particles consists of a mesostructured matrix that is based on silicon oxide and organic groups with reactive terminal groups that are linked covalently to the inorganic structure, whereby said mesostructured matrix has a pore size of between 1.5 and 30 nm and has amorphous walls with a thickness of between 1 and 20 nm. Said elementary spherical particles have a maximum diameter of 10 μm. The matrix that is based on silicon oxide can contain aluminum, titanium, zirconium and cerium. Two methods for preparation of said material are also described. | 07-23-2009 |
20100291387 | AMORPHOUS SILICON-CONTAINING MATERIAL WITH HIERARCHICAL AND ORGANIZED POROSITY - Material with hierarchical porosity consisting of at least two elementary spherical particles, each one of said particles comprising a matrix based on silicon oxide, mesostructured, having a mesopore diameter ranging between 1.5 and 30 nm and exhibiting amorphous and microporous walls of thickness ranging between 1.5 and 50 nm, said elementary spherical particles having a maximum diameter of 200 microns. The matrix based on silicon oxide can contain aluminium. The preparation of said material is also described. | 11-18-2010 |
20100297002 | CRYSTALLIZED SILICON-CONTAINING MATERIAL WITH HIERARCHICAL AND ORGANIZED POROSITY - Material with hierarchical and organized porosity in the microporosity and mesoporosity domains, consisting of at least two elementary spherical particles, each one of said particles comprising a matrix based on silicon oxide, mesostructured, having a mesopore diameter ranging between 1.5 and 30 nm and exhibiting microporous and crystallized walls of thickness ranging between 1 and 60 nm, said elementary spherical particles having a maximum diameter of 200 microns. The preparation of said material is also described. | 11-25-2010 |