Patent application number | Description | Published |
20080257405 | Multijunction solar cell with strained-balanced quantum well middle cell - A multijunction photovoltaic cell including a top subcell; a second subcell disposed immediately adjacent to the top subcell and producing a first photo-generated current; and including a sequence of first and second different semiconductor layers with different lattice constant; and a lower subcell disposed immediately adjacent to the second subcell and producing a second photo-generated current substantially equal in amount to the first photo-generated current density. | 10-23-2008 |
20080264476 | SOLAR CELL WITH DIAMOND LIKE CARBON COVER GLASS - A solar cell including a semiconductor body including at least one photoactive junction; and a diamond like carbon layer deposited over the top surface of the semiconductor body. | 10-30-2008 |
20100089440 | Dual Junction InGaP/GaAs Solar Cell - The present application is directed to a multi-terminal semiconductor solar cell. The solar cell may be dual junction solar cells comprising single junctions independently interconnected by a middle lateral conduction layer (MLCL). The solar cells may include a GaAs subcell, a GaInP subcell, and a MLCL disposed therebetween. In addition, the solar cells may include a plurality of terminals. One terminal may be operatively connected to the GaAs subcell, a second terminal may be operatively connected to the GaInP subcell and a third terminal may be operatively connected to the MLCL. | 04-15-2010 |
20100229926 | Four Junction Inverted Metamorphic Multijunction Solar Cell with a Single Metamorphic Layer - A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A lower fourth solar subcell is provided adjacent to the third subcell and lattice matched thereto, the lower fourth subcell having a fifth band gap smaller than the fourth band gap. | 09-16-2010 |
20100282305 | Inverted Multijunction Solar Cells with Group IV/III-V Hybrid Alloys - A method of manufacturing a solar cell comprising providing a growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell, including at least one subcell composed of a group IV/III-V hybrid alloy such as GeSiSn; and removing the semiconductor substrate. | 11-11-2010 |
20100282306 | Multijunction Solar Cells with Group IV/III-V Hybrid Alloys - A method of manufacturing a solar cell by providing a germanium semiconductor growth substrate; and depositing on the semiconductor growth substrate a sequence of layers of semiconductor material forming a solar cell, including a subcell composed of a group IV/III-V hybrid alloy. | 11-11-2010 |
20100282307 | Multijunction Solar Cells with Group IV/III-V Hybrid Alloys for Terrestrial Applications - A solar cell including a substrate; a first solar subcell composed of GeSiSn disposed over the substrate and having a first band gap; a second solar subcell composed of GaAs, InGaAsP, or InGaP and disposed over the first solar subcell having a second band gap greater than the first band gap and lattice matched to said first solar subcell; and a third solar subcell composed of GaInP and disposed over the second solar subcell having a third band gap greater than the second band gap and lattice matched with respect to the second subcell. | 11-11-2010 |
20120186641 | INVERTED MULTIJUNCTION SOLAR CELLS WITH GROUP IV ALLOYS - A method of manufacturing a solar cell comprising providing a growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell, including at least one subcell composed of a group IV alloy such as GeSiSn; and removing the semiconductor substrate. | 07-26-2012 |
20120211071 | FOUR JUNCTION INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH A SINGLE METAMORPHIC LAYER - A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a graded interlayer adjacent to the second solar subcell, the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A lower fourth solar subcell is provided adjacent to the third subcell and lattice matched thereto, the lower fourth subcell having a fifth band gap smaller than the fourth band gap. | 08-23-2012 |