Patent application number | Description | Published |
20080199086 | APPARATUS FOR PERFORMING FAST CLOSEST MATCH IN PATTERN RECOGNITION - A method and apparatus for determining a closest match of N input patterns relative to R reference patterns using K processing units. Each of a set of input patterns are loaded into the K processing units. One of the Reference patterns is sequentially loaded into each of the processing units and a distance defining the similarity between the reference pattern and each of the input patterns is calculated. A present calculated distance replaces its corresponding stored present minimum distance if it is has a smaller value. After the R reference patterns have been processed the minimum distance and its corresponding identification for all N input patterns is determined without merging outputs. The minimum distances and the identifications may be read either in parallel or serially. The apparatus is easily scalable by adding processors. The number of reference patterns may be easily increased without altering system configuration. | 08-21-2008 |
20090254991 | INTRUSION DETECTION USING A NETWORK PROCESSOR AND A PARALLEL PATTERN DETECTION ENGINE - An intrusion detection system (IDS) comprises a network processor (NP) coupled to a memory unit for storing programs and data. The NP is also coupled to one or more parallel pattern detection engines (PPDE) which provide high speed parallel detection of patterns in an input data stream. Each PPDE comprises many processing units (PUs) each designed to store intrusion signatures as a sequence of data with selected operation codes. The PUs have configuration registers for selecting modes of pattern recognition. Each PU compares a byte at each clock cycle. If a sequence of bytes from the input pattern match a stored pattern, the identification of the PU detecting the pattern is outputted with any applicable comparison data. By storing intrusion signatures in many parallel PUs, the IDS can process network data at the NP processing speed. PUs may be cascaded to increase intrusion coverage or to detect long intrusion signatures. | 10-08-2009 |
20120210430 | INTRUSION DETECTION USING A NETWORK PROCESSOR AND A PARALLEL PATTERN DETECTION ENGINE - An intrusion detection system (IDS) comprises a network processor (NP) coupled to a memory unit for storing programs and data. The NP is also coupled to one or more parallel pattern detection engines (PPDE) which provide high speed parallel detection of patterns in an input data stream. Each PPDE comprises many processing units (PUs) each designed to store intrusion signatures as a sequence of data with selected operation codes. The PUs have configuration registers for selecting modes of pattern recognition. Each PU compares a byte at each clock cycle. If a sequence of bytes from the input pattern match a stored pattern, the identification of the PU detecting the pattern is outputted with any applicable comparison data. By storing intrusion signatures in many parallel PUs, the IDS can process network data at the NP processing speed. PUs may be cascaded to increase intrusion coverage or to detect long intrusion signatures. | 08-16-2012 |
20130234218 | METAL OXIDE SEMICONDUCTOR (MOS) DEVICE WITH LOCALLY THICKENED GATE OXIDE - A method of fabricating a semiconductor device including providing a gate structure on a channel portion of a semiconductor substrate, wherein the gate structure includes at least one gate dielectric on the channel portion of the semiconductor substrate and at least one gate conductor on the at least one gate dielectric. An edge portion of the at least one gate dielectric is removed on each side of the gate structure, wherein the removing of the edge portion of the gate dielectric provides an exposed base edge of the at least one gate conductor and an exposed channel surface of the semiconductor substrate underlying the gate structure. The sidewall of the gate structure is oxidized, which also oxidizes at least one of the exposed base edge of the at least one gate conductor and the exposed channel surface of the semiconductor substrate that is underlying the gate structure. | 09-12-2013 |
20140070331 | METAL OXIDE SEMICONDUCTOR (MOS) DEVICE WITH LOCALLY THICKENED GATE OXIDE - A method of fabricating a semiconductor device including providing a gate structure on a channel portion of a semiconductor substrate, wherein the gate structure includes at least one gate dielectric on the channel portion of the semiconductor substrate and at least one gate conductor on the at least one gate dielectric. An edge portion of the at least one gate dielectric is removed on each side of the gate structure, wherein the removing of the edge portion of the gate dielectric provides an exposed base edge of the at least one gate conductor and an exposed channel surface of the semiconductor substrate underlying the gate structure. The sidewall of the gate structure is oxidized, which also oxidizes at least one of the exposed base edge of the at least one gate conductor and the exposed channel surface of the semiconductor substrate that is underlying the gate structure. | 03-13-2014 |