Patent application number | Description | Published |
20090146214 | METHOD FOR MANUFACTURING AN EEPROM CELL - A method for manufacturing a cell of a non-volatile electrically erasable and programmable memory including a dual-gate MOS transistor. The method includes the steps of providing a semiconductor substrate covered with an insulating layer including a thinned down portion and having a first surface common with the substrate and a second surface opposite to the first surface; and incorporating nitrogen at the level of the second surface, whereby the maximum nitrogen concentration is closer to the second surface than to the first surface. | 06-11-2009 |
20100052128 | DEVICE FOR DETECTING AN ATTACK AGAINST AN INTEGRATED CIRCUIT - An integrated circuit including an intrusion attack detection device. The device includes a single-piece formed of a conductive material and surrounded with an insulating material and includes at least one stretched or compressed elongated conductive track, connected to a mobile element, at least one conductive portion distant from said piece and a circuit for detecting an electric connection between the piece and the conductive portion. A variation in the length of said track in an attack by removal of the insulating material, causes a displacement of the mobile element until it contacts the conductive portion. | 03-04-2010 |
20100059766 | STORAGE OF AN IMAGE IN AN INTEGRATED CIRCUIT - An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion. | 03-11-2010 |
20100158072 | DEVICE FOR MONITORING THE TEMPERATURE OF AN ELEMENT - A device for monitoring the temperature surrounding a circuit, including: a charge storage element; a charge evacuation device; and a thermo-mechanical switch connecting the storage element to the evacuation element, the switch being capable of closing without the circuit being electrically powered, when the temperature exceeds a threshold. | 06-24-2010 |
20100308898 | METHOD OF GENERATING ELECTRICAL ENERGY IN AN INTEGRATED CIRCUIT DURING THE OPERATION OF THE LATTER, CORRESPONDING INTEGRATED CIRCUIT AND METHOD OF FABRICATION - An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material. | 12-09-2010 |
20100315108 | DEVICE FOR DETECTING THE THINNING DOWN OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT CHIP - A device for detecting the thinning down of the substrate of an integrated circuit chip, including, in the active area of the substrate, bar-shaped diffused resistors connected as a Wheatstone bridge, wherein: first opposite resistors of the bridge are oriented along a first direction; the second opposite resistors of the bridge are oriented along a second direction; and the first and second directions are such that a thinning down of the substrate causes a variation of the imbalance value of the bridge. | 12-16-2010 |
20100321049 | INTEGRATED CIRCUIT CHIP IDENTIFICATION ELEMENT - A element for identifying an integrated circuit chip having identical diffused resistors connected as a Wheatstone bridge. | 12-23-2010 |
20110079881 | INTEGRATED CIRCUIT CHIP PROTECTED AGAINST LASER ATTACKS - An integrated circuit chip formed inside and on top of a semiconductor substrate and including: in the upper portion of the substrate, an active portion in which components are formed; and under the active portion and at a depth ranging between 5 and 50 μm from the upper surface of the substrate, an area comprising sites for gettering metal impurities and containing metal atoms at a concentration ranging between 10 | 04-07-2011 |
20110080190 | METHOD FOR PROTECTING AN INTEGRATED CIRCUIT CHIP AGAINST LASER ATTACKS - A method for protecting, against laser attacks, an integrated circuit chip formed inside and on top of a semiconductor substrate and including in the upper portion of the substrate an active portion in which are formed components, this method including the steps of: forming in the substrate a gettering area extending under the active portion, the upper limit of the area being at a depth ranging between 5 and 50 μm from the upper surface of the substrate; and introducing diffusing metal impurities into the substrate. | 04-07-2011 |
20110108902 | MEMORY WITH A READ-ONLY EEPROM-TYPE STRUCTURE - A non-volatile memory including at least first and second memory cells each including a storage MOS transistor with dual gates and an insulation layer provided between the two gates. The insulation layer of the storage transistor of the second memory cell includes at least one portion that is less insulating than the insulation layer of the storage transistor of the first memory cell. | 05-12-2011 |
20110153245 | METHOD OF IDENTIFYING AN INTEGRATED CIRCUIT AND CORRESPONDING INTEGRATED CIRCUIT - An integrated circuit includes non-volatile storage configured to secretly store a digital word, the value of which forms an identification code. The integrated circuit also includes control circuitry configured to receive the digital word and to generate transient electrical currents or transient voltages, the characteristics of which depend on the value of the digital word. There is an electrically conductive network configured to be passed through by the electrical currents or receive the transient voltages so as to generate an electromagnetic field that identifies the integrated circuit. | 06-23-2011 |
20120009774 | DEVICE FOR DETECTING AN ATTACK AGAINST AN INTEGRATED CIRCUIT - An integrated circuit including an intrusion attack detection device. The device includes a single-piece formed of a conductive material and surrounded with an insulating material and includes at least one stretched or compressed elongated conductive track, connected to a mobile element, at least one conductive portion distant from said piece and a circuit for detecting an electric connection between the piece and the conductive portion. A variation in the length of said track in an attack by removal of the insulating material, causes a displacement of the mobile element until it contacts the conductive portion. | 01-12-2012 |
20120068689 | EEPROM CELL WITH CHARGE LOSS - An EEPROM memory cell that includes a dual-gate MOS transistor in which the two gates are separated by an insulation layer, wherein the insulation layer includes a first portion and a second portion having lower insulation properties than the first one, the second portion being located at least partially above a channel area of the transistor. | 03-22-2012 |
20120091553 | Method for Detecting the Repackaging of an Integrated Circuit after it has been Originally Packaged, and Corresponding Integrated Circuit - An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged. | 04-19-2012 |
20130011944 | STORAGE OF AN IMAGE IN AN INTEGRATED CIRCUIT - An integrated circuit including a substrate of a semiconductor material and first metal portions of a first metallization level or of a first via level defining pixels of an image. The pixels are distributed in first pixels, for each of which the first metal portion is connected to the substrate, and in second pixels, for each of which the first metal portion is separated from the substrate by at least one insulating portion. | 01-10-2013 |
20130015549 | Integrated Thermoelectric GeneratorAANM Fornara; PascalAACI PourrieresAACO FRAAGP Fornara; Pascal Pourrieres FRAANM Rivero; ChristianAACI RoussetAACO FRAAGP Rivero; Christian Rousset FR - An integrated thermoelectric generator includes a semiconductor. A set of thermocouples are electrically connected in series and thermally connected in parallel. The set of thermocouples include parallel semiconductor regions. Each semiconductor region has one type of conductivity from among two opposite types of conductivity. The semiconductor regions are electrically connected in series so as to form a chain of regions having, alternatingly, one and the other of the two types of conductivity. | 01-17-2013 |
20130026597 | METHOD OF GENERATING ELECTRICAL ENERGY IN AN INTEGRATED CIRCUIT DURING THE OPERATION OF THE LATTER, CORRESPONDING INTEGRATED CIRCUIT AND METHOD OF FABRICATION - An integrated circuit may include a region containing a thermoelectric material and be configured to be subjected to a temperature gradient resulting from a flow of an electric current in a part of the integrated circuit during its operation, and an electrically conducting output coupled to the region for delivering the electrical energy produced by thermoelectric material. | 01-31-2013 |
20130032926 | ADJUSTABLE RESISTOR - An adjustable resistor formed on a first insulating layer of a substrate, including: a first polysilicon layer covered with a second insulating layer of a first thickness, except in a region where the first polysilicon layer is covered with a thin insulator layer of a second thickness smaller than the first thickness; a second polysilicon layer covering the second insulating layer and the thin insulator layer; on each side of the second insulating layer and at a distance from it, a first and a second conductive vias providing access to the terminals of the resistor on the first polysilicon layer; and a third conductive via providing access to a contacting area on the second polysilicon layer. | 02-07-2013 |
20130075726 | PROTECTION METHOD FOR AN ELECTRONIC DEVICE AND CORRESPONDING DEVICE - The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide. | 03-28-2013 |
20130088263 | ELECTRIC CHARGE FLOW CIRCUIT FOR A TIME MEASUREMENT - A charge flow circuit for a time measurement, including a plurality of elementary capacitive elements electrically in series, each elementary capacitive element leaking through its dielectric space. | 04-11-2013 |
20130104950 | Method of Wireless Communication Between Two Devices, Especially within One and the Same Integrated Circuit, and Corresponding System | 05-02-2013 |
20130146873 | Integrated Mechanical Device for Electrical Switching - An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations. | 06-13-2013 |
20130147004 | Integrated Capacitive Device Having a Thermally Variable Capacitive Value - An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances. | 06-13-2013 |
20130229875 | METHOD OF READING AND WRITING NONVOLATILE MEMORY CELLS - The disclosure relates to a method of reading and writing memory cells, each including a charge accumulation transistor in series with selection transistor, including applying a selection voltage to a gate of the selection transistor of the memory cell; applying a read voltage to a control gate of the charge accumulation transistor of the memory cell; applying the selection voltage to a gate of the selection transistor of a second memory cell coupled to the same bitline; and applying an inhibition voltage to a control gate of the charge accumulation transistor of the second memory cell, to maintain the transistor in a blocked state. | 09-05-2013 |
20130250531 | ELECTRICALLY ACTIVATABLE INTEGRATED MECHANICAL ANTI-ROLLBACK DEVICE WITH ONE OR MORE POSITIONS - A thermally deformable assembly is formed in an integrated-circuit metallization level. The physical behavior of the metal forming the assembly brings the assembly into contact with a stop-forming body when subjected to a temperature change caused by a current flow. A natural rollback to the initial configuration in which the assembly is a certain distance away from the body is prevented. The state or configuration of the assembly is determined by a capacitive reader. | 09-26-2013 |
20130314150 | Method for Detecting Electrical Energy Produced from a Thermoelectric Material contained in an Integrated Circuit - An integrated circuit includes active circuitry disposed at a surface of a semiconductor body and an interconnect region disposed above the semiconductor body. A thermoelectric material is disposed in an upper portion of the interconnect region away from the semiconductor body. The thermoelectric material is configured to deliver electrical energy when exposed to a temperature gradient. This material can be used, for example, in a method for detecting the repackaging of the integrated circuit after it has been originally packaged. | 11-28-2013 |
20140026670 | METHOD OF COMPENSATING FOR EFFECTS OF MECHANICAL STRESSES IN A MICROCIRCUIT - A method for manufacturing an integrated circuit includes forming in a substrate a measuring circuit sensitive to mechanical stresses and configured to supply a measurement signal representative of mechanical stresses exerted on the measuring circuit. The measuring circuit is positioned such that the measurement signal is also representative of mechanical stresses exerted on a functional circuit of the integrated circuit. A method of using the integrated circuit includes determining from the measurement signal the value of a parameter of the functional circuit predicted to mitigate an impact of the variation in mechanical stresses on the operation of the functional circuit, and supplying the functional circuit with the determined value of the parameter. | 01-30-2014 |
20140027881 | ELECTRIC CHARGE FLOW ELEMENT - An electric charge flow element including, on an insulating support, a stack of a first electrode, of a dielectric layer having at least one portion capable of letting charges flow by tunnel effect, and of a second electrode, wherein at least one of the electrodes is made of undoped polysilicon. | 01-30-2014 |
20140070829 | DEVICE FOR DETECTING THE THINNING DOWN OF THE SUBSTRATE OF AN INTEGRATED CIRCUIT CHIP - A device for detecting the thinning down of the substrate of an integrated circuit chip, including, in the active area of the substrate, bar-shaped diffused resistors connected as a Wheatstone bridge, wherein: first opposite resistors of the bridge are oriented along a first direction; the second opposite resistors of the bridge are oriented along a second direction; and the first and second directions are such that a thinning down of the substrate causes a variation of the imbalance value of the bridge. | 03-13-2014 |
20140133517 | DEVICE FOR MONITORING THE TEMPERATURE OF AN ELEMENT - A device for monitoring the temperature surrounding a circuit, including: a charge storage element; a charge evacuation device; and a thermo-mechanical switch connecting the storage element to the evacuation element, the switch being capable of closing without the circuit being electrically powered, when the temperature exceeds a threshold. | 05-15-2014 |
20140138814 | Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated Circuit - A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element. | 05-22-2014 |
20140167908 | Integrated Mechanical Device for Electrical Switching - An integrated circuit comprising a mechanical device for electrical switching comprising a first assembly being thermally deformable and having a beam held at at least two different locations by at least two arms, the beam and the arms being metal and disposed within the same metallization level, and further comprising at least one electrically conducting body. The first assembly has a first configuration at a first temperature and a second configuration at a second temperature different from the first temperature. The beam is out of contact with the electrically conducting body in one configuration in contact with the body in the other configuration. The beam establishes or breaks an electrical link passing through the said at least one electrically conducting body and through the said beam in the different configurations. | 06-19-2014 |
20140209141 | Method for Generation of Electrical Power within a Three-Dimensional Integrated Structure and Corresponding Link Device - Method for generation of electrical power within a three-dimensional integrated structure comprising several elements electrically interconnected by a link device, the method comprising the production of a temperature gradient in at least one region of the link device resulting from the operation of at least one of the said elements, and the production of electrical power using at least one thermo-electric generator comprising at least one assembly of thermocouples electrically connected in series and thermally connected in parallel and contained within the said region subjected to the said temperature gradient. | 07-31-2014 |
20140266562 | Integrated Electrical-Switching Mechanical Device Having a Blocked State - An integrated circuit, comprising an electrical-switching mechanical device in a housing having at least one first thermally deformable assembly including a beam held in at least two different locations by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within the same first metallization level and an electrically conductive body, wherein the said first thermally deformable assembly has at least one first configuration at a first temperature and a second configuration when at least one is at a second temperature different from the first temperature, wherein the beam is at a distance from the body in the first configuration and in contact with the said body and immobilized by the said body in the second configuration and establishing or prohibiting an electrical link passing through the body and through the beam. | 09-18-2014 |
20140319653 | Integrated Switchable Capacitive Device - An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor electrode. The movable capacitor electrode is switchable between a first configuration in which the movable capacitor electrode and fixed main capacitor electrode are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor. In a second configuration, the movable capacitor electrode and the fixed main capacitor electrode are in electrical contact in such a manner as to give a second capacitive value. | 10-30-2014 |
20140360851 | Electrically Controllable Integrated Switch - An integrated circuit includes an interconnection part with several metallization levels. An electrically activatable switching device within the interconnection part has an assembly that includes a beam held by a structure. The beam and structure are located within the same metallization level. Locations of fixing of the structure on the beam are arranged so as to define for the beam a pivot point situated between these fixing locations. The structure is substantially symmetric with respect to the beam and to a plane perpendicular to the beam in the absence of a potential difference. The beam is able to pivot in a first direction in the presence of a first potential difference applied between a first part of the structure and to pivot in a second direction in the presence of a second potential difference applied between a second part of the structure. | 12-11-2014 |
20140367784 | COMPONENT, FOR EXAMPLE NMOS TRANSISTOR, WITH ACTIVE REGION WITH RELAXED COMPRESSION STRESSES, AND FABRICATION METHOD - An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by an insulating region. The insulating region is formed to includes at least one area in which the insulating region has two insulating extents that are mutually separated from each other by a separation region formed by a part of the substrate. | 12-18-2014 |
20150014794 | Integrated Circuit Provided with a Device for Detecting its Spatial Orientation and/or a Modification of this Orientation - An integrated circuit includes a mechanical device for detection of spatial orientation and/or of change in orientation of the integrated circuit. The device is formed in the BEOL and includes an accommodation whose sides include metal portions formed within various metallization levels. A mobile metal component is accommodated within the accommodation. A monitor inside the accommodation defines a displacement area for the metal component and includes electrically conductive elements disposed at the periphery of the displacement area. The component is configured so as to, under the action of the gravity, come into contact with the two electrically conductive elements in response to a given spatial orientation of the integrated circuit. A detector is configured to detect an electrical link passing through the component and the electrically conductive elements. | 01-15-2015 |
20150043269 | ELECTRIC CHARGE FLOW CIRCUIT FOR A TIME MEASUREMENT - A charge flow circuit for a time measurement, including a plurality of elementary capacitive elements electrically in series, each elementary capacitive element leaking through its dielectric space. | 02-12-2015 |