Okaguchi
Kenjiro Okaguchi, Moriyama-Shi JP
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20090060790 | SENSOR FOR DETECTING SUBSTANCE IN LIQUID - A sensor for detecting a substance in liquid includes a sensing circuit including a sensing surface acoustic wave (SAW) element in which a reaction film to react with a substance in liquid, a reference circuit including a reference SAW element including an IDT and not including a reaction film, a first signal source driving the sensing circuit, a second signal source driving the reference circuit and being independent of the first signal source, and a differential circuit arranged to output a differential output between an output of the sensing circuit and an output of the reference circuit. The frequency of a first frequency signal output from the first signal source is different from the frequency of a second frequency signal output from the second signal source, thereby making a driving frequency for the sensing SAW element and a driving frequency for the reference SAW element substantially the same as or different from one another. | 03-05-2009 |
20090061529 | METHOD FOR DETECTING SUBSTANCE IN LIQUID AND SENSOR FOR DETECTING SUBSTANCE IN LIQUID - A method for detecting a substance in a liquid with high accuracy and high sensitivity includes recording frequency drifts of output frequencies of oscillator circuit outputs of m sensing oscillator circuits respectively including sensing SAW elements and frequency drifts of output frequencies of oscillator circuit outputs of n reference oscillator circuits respectively including reference SAW elements; determining at least one of the sensing oscillator circuits whose frequency drifts fall within a predetermined range and at least one of the reference oscillator circuits whose frequency drifts fall within the predetermined range to be acceptable; selecting at least one of the sensing oscillator circuits from among the acceptable sensing oscillator circuits and at least one of the reference oscillator circuits from among the acceptable reference oscillator circuits; and comparing an oscillator circuit output of the selected at least one of sensing oscillator circuits with an oscillator circuit output of the selected at least one of reference oscillator circuits to thereby detect a detection target substance. | 03-05-2009 |
20090113997 | SENSOR FOR DETECTING SUBSTANCE IN LIQUID - A sensor for detecting a substance in liquid includes a sensing oscillation circuit and a reference oscillation circuit. The sensing oscillation circuit includes a sensing SAW element in which a reaction film arranged so as to cover at least one IDT and to react with a substance in liquid is disposed and a first amplifier circuit. The reference oscillation circuit includes a reference SAW element and a second amplifier circuit. The reference SAW element includes at least one IDT and no reaction film. The oscillation frequency of the sensing oscillation circuit and the oscillation frequency of the reference oscillation circuit are separated by at least about 200×k | 05-07-2009 |
20090272193 | SURFACE ACOUSTIC WAVE SENSOR - A surface acoustic wave sensor detects a mass load on a resonator-type surface acoustic wave filter on the basis of a change in frequency and includes an IDT electrode arranged on a piezoelectric substrate to excite surface waves, an insulating film arranged so as to cover the IDT electrode, and a reaction film which is disposed on the insulating film and which reacts with a target substance to be detected or a binding substance that binds to a target substance to be detected. The reaction film is composed of a metal or a metal oxide. | 11-05-2009 |
Kenjiro Okaguchi, Nagaokakyo-Shi JP
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20140285065 | PIEZOELECTRIC ELEMENT DRIVE CIRCUIT - A piezoelectric element drive circuit includes an H bridge circuit, an LPF-attached differential amplifier circuit, an amplifier circuit, and an inverter circuit. First and second drive signals output from the H bridge circuit and having opposite phases are applied to a piezoelectric element. A voltage between opposite ends of a resistor connected to a first output terminal of the H bridge circuit is input to the LPF-attached differential amplifier circuit. A differential signal output from the LPF-attached differential amplifier circuit has a lower slew rate because harmonic components are suppressed by the function of a low pass filter. Accordingly, respective slew rates of first and second control signals input to first and second input terminals of the H bridge circuit are also reduced. Hence the first and second control signals are each provided as a signal having a step-like waveform and including harmonic components that have been suppressed. | 09-25-2014 |
20150038858 | BLOOD PRESSURE METER AND PUMP DRIVING SYSTEM - In the present invention, a pump driving circuit includes a step-up unit that steps up a first DC voltage from a power supply and outputs it as a second DC voltage, and an H bridge unit that has first and second series circuits that each include two switching elements connected in series between a high potential corresponding to the second DC voltage and a reference potential. According to a control signal from the control unit, the two switching elements of the first series circuit and the two switching elements of the second series circuit are switched on and off. A voltage generated between a first contact point between the two switching elements of the first series circuit, and a second contact point between the two switching elements of the second series circuit is used as a driving voltage for driving a pump. | 02-05-2015 |
Kouhei Okaguchi, Wako-Shi JP
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20100132163 | PIPE HANDLE HOLDING MECHANISM - A pipe handle holding structure wherein force for holding a bar handle in a holder is minimized, the holding performance whereby the bar handle is held by the holder is improved, and the bar handle and holder are maintained in an appropriate state even in cases in which the bar handle is frequently attached to and detached from the holder. The pipe handle holding structure comprises a round pipe-shaped bar handle, and a holder for holding an external peripheral surface of the bar handle. The holder has a plurality of concealing parts for concealing the external peripheral surface of the bar handle and elastically deforming the external peripheral surface in a pipe diameter direction. | 06-03-2010 |
Shuji Okaguchi, Osaka-Shi JP
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20090022619 | Steel plate for submerged arc welding - A steel plate for submerged arc welding having good low temperature toughness at a fusion line vicinity part and a boundary with the base material in HAZ as well as at the base material and the weld metal is provided. The steel plate for submerged arc welding according to the invention contains, by mass, 0.03% to 0.09% C, 1.5% to 2.5% Mn, 0.005% to 0.025% Nb, 0.005% to 0.02% Ti, 0.01% to 0.06% Al, at most 0.0005% B, 0.001% to 0.008% N, at most 0.015% P, at most 0.015% S, and at most 0.006% O, and the balance consists of Fe and impurities. Therefore, the steel plate according to the present invention has good low temperature toughness not only at the fusion line vicinity part and the boundary with a base material in the HAZ but also in the base material and weld metal. | 01-22-2009 |
20090297872 | High-Tensile Steel Plate, Welded Steel Pipe or Tube, and Methods of Manufacturing Thereof - In a high-tensile steel plate according to the invention, the carbon equivalent Pcm represented in Expression (1) is from 0.180% to 0.220%, the surface hardness is a Vicker's hardness of 285 or less, the ratio of a Martensite Austenite constituent in the surface layer is not more than 10%, the ratio of a mixed structure of ferrite and bainite inside beyond the surface layer is not less than 90%, the ratio of the bainite in the mixed structure is not less than 10%, the thickness of the lath of bainite is not more than 1 μm, the length of the lath is not more than 20 μm, and the segregation ratio as the ratio of the Mn concentration in the center segregation part relative to the Mn concentration at a part in a depth equal to ¼ of the thickness of the plate from the surface is not more than 1.3. Pcm=C+Si/30+(Mn+Cu+Cr)/20+Ni/60+Mo/15+V/10+5B . . . (1) where the element symbols in Expression (1) represent the % by mass of the respective elements. In this way, the high-tensile steel plate according to the invention has a yield strength of at least 551 MPa and a tensile strength of at least 620 MPa as well as high toughness, high propagating shear fracture and high weldability. | 12-03-2009 |
Takahiro Okaguchi, Hyogo JP
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20110176568 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di107-21-2011 | |
Takahiro Okaguchi, Toyama JP
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20150124847 | NITRIDE SEMICONDUCTOR LASER ELEMENT - Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light. | 05-07-2015 |