Patent application number | Description | Published |
20100104760 | VACUUM EXHAUST METHOD AND A SUBSTRATE PROCESSING APPARATUS THEREFOR - A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member. | 04-29-2010 |
20100314356 | METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS - In a method of reusing a consumable part for use in a plasma processing apparatus, a silicon carbide (SiC) lump is formed by depositing SiC by chemical vapor deposition (CVD), and a consumable part for the plasma processing apparatus is manufactured by processing the SiC lump, the consumable part having a predetermined shape. A first plasma process is performed on a substrate by using the manufactured consumable part. A surface of the consumable part that has been eroded by the plasma process is subjected to a clean process for a specific period of time. SiC is deposited on the cleaned surface of the eroded consumable part by CVD. A consumable part having the predetermined shape is remanufactured by processing the eroded consumable part having the surface on which the SiC is deposited. A second plasma process is performed on a substrate by using the remanufactured consumable part. | 12-16-2010 |
20110006037 | SURFACE PROCESSING METHOD - In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer. | 01-13-2011 |
20120073753 | ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS - An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region. | 03-29-2012 |
20120258258 | METHOD OF REUSING A CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS - A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part. | 10-11-2012 |
20130040055 | SURFACE PROCESSING METHOD - In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer. | 02-14-2013 |
20130092185 | VACUUM EXHAUST METHOD AND A SUBSTRATE PROCESSING APPARATUS THEREFOR - A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member. | 04-18-2013 |
Patent application number | Description | Published |
20090080136 | ELECTROSTATIC CHUCK MEMBER - An electrostatic chuck member comprises an electrode layer and an electric insulating layer, wherein a spray coating layer of an oxide of a Group 3A element in the Periodic Table is formed as an outermost layer of the member and a surface of the spray coating layer is rendered into a densified re-melting layer having an average surface roughness (Ra) Of 0.8-3.0 μm. | 03-26-2009 |
20090294064 | FOCUS RING AND PLASMA PROCESSING APPARATUS - A focus ring that can eliminate the gap between a mounting stage and the focus ring in a plasma processing apparatus to prevent damage to a side wall of the mounting stage of a plasma processing apparatus and attachment of particles to a substrate to be processed resulting from spread of plasma. The focus ring has an annular shape and is provided in an outer peripheral edge portion of an upper surface of the mounting stage. The focus ring is comprised of a combination of a plurality of focus ring pieces formed by dividing the focus ring in a circumferential direction of the annular shape, and an annular band member that urges each of the focus ring pieces toward a center of the focus ring. | 12-03-2009 |
20100307687 | INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL - An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin. | 12-09-2010 |
Patent application number | Description | Published |
20080196744 | In-chamber member, a cleaning method therefor and a plasma processing apparatus - An in-chamber member to use in the chamber of a plasma processing vessel has a coating film formed by a coating agent. The in-chamber member having deposits formed on the coating film is separated from the chamber and is immersed into a peeling solvent, e.g., acetone. Since the coating agent is made of a resist formed of a main component of, e.g., cyclized rubber-bisazide and a photosensitive component, the deposits can be separated from the in-chamber member together with the coating film being separated. | 08-21-2008 |
20130255881 | INTERNAL MEMBER OF A PLASMA PROCESSING VESSEL - An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin. | 10-03-2013 |
20130284375 | CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS - A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part. | 10-31-2013 |