Patent application number | Description | Published |
20080220589 | METHOD FOR EVALUATION OF BONDED WAFER - A bonded wafer formed by directly bonding a wafer for active layer and a wafer for support substrate without an insulating film and thinning the wafer for active layer is evaluated by a method comprising steps of removing native oxide from a surface of an active layer in the bonded wafer, subjecting the bonded wafer to an etching with an etching liquid having an etching rate to a material constituting the wafer faster than that to an oxide of the material to remove at least a whole of the active layer, and detecting island-shaped oxides exposed by the etching, in which the etching is carried out so as to satisfy a relation of T≦X≦T+500 nm wherein T is a thickness of the active layer (nm) and X is an etching depth (nm) to detect the number and size of the island-shaped oxides. | 09-11-2008 |
20090023269 | Method for producing soi wafer - Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized. | 01-22-2009 |
20090023272 | METHOD OF PRODUCING BONDED WAFER - There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding. | 01-22-2009 |
20090075453 | METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE - There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer. | 03-19-2009 |
20090117708 | METHOD FOR MANUFACTURING SOI SUBSTRATE - A method for manufacturing an SOI substrate includes steps of forming a first oxide film on a surface of a first silicon substrate; implanting hydrogen ions into the surface of the first silicon substrate on which the first oxide film is formed to form an ion implant region inside the first silicon substrate; removing the entire or the portion of first oxide film; forming a laminate by bonding the second silicon substrate to a hydrogen ion-implanted surface of the first silicon substrate with the first oxide film, or second oxide film formed on a surface of the second silicon substrate, or the first oxide film and second oxide film, interposed therebetween; and subjecting the laminate to a heat treatment at a predetermined temperature to separate the first silicon substrate along the ion implant region, thereby obtaining an SOI substrate including a thin SOI layer formed on the second silicon substrate with the oxide film interposed therebetween. The method can reduce a degree of contamination from heavy metals inside the SOI substrate. | 05-07-2009 |
20090186464 | Method for producing bonded wafer - In the method for producing a bonded wafer by bonding a wafer for active layer to a wafer for support layer and then thinning the wafer for active layer, when oxygen ions are implanted into the wafer for active layer, the implantation step is divided into two stages conducted under specified conditions. | 07-23-2009 |
20100015779 | METHOD FOR PRODUCING BONDED WAFER - There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. | 01-21-2010 |
20100068867 | METHOD FOR PRODUCING BONDED SILICON WAFER - A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO | 03-18-2010 |
20100178750 | METHOD FOR PRODUCING BONDED WAFER - A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface. | 07-15-2010 |
20100204102 | HYBRID GEL COMPRISING CHEMICALLY CROSSLINKED HYALURONIC ACID DERIVATIVE AND PHARMACEUTICAL COMPOSITION COMPRISING THE SAME - The present invention provides a composition comprising a hyaluronic acid derivative having a crosslinking group(s) and a hydrophilic polysaccharide derivative having a hydrophobic group(s), wherein the hyaluronic acid derivative having a crosslinking group(s) is prepared by crosslinkage formation reaction in hyaluronic acid or a derivative thereof having a crosslinkable group(s) in the presence of the hydrophilic polysaccharide derivative wherein the hydrophilic polysaccharide derivative may have a crosslinkable group(s). | 08-12-2010 |
20110027969 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer. | 02-03-2011 |