Patent application number | Description | Published |
20130020583 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a first and a second lamination unit being alternately laminated such that each of an uppermost and a lowermost portion of the buffer layer is formed of the first lamination unit. The first lamination unit is formed of a first and a second composition layer having different compositions being alternately laminated so as to increase the thickness of the second composition layer in a portion more distant from the base substrate side, to thereby cause a compressive strain to exist in the first lamination unit such that it increases in a portion more distant from the base substrate. The second lamination unit is formed as an intermediate layer that is substantially strain-free and formed with a thickness of 15 nm or more and 150 nm or less. | 01-24-2013 |
20130026486 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a composition modulation layer that is formed of a first composition layer made of AlN and a second composition layer made of Al | 01-31-2013 |
20130026488 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base substrate thereof. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer including a plurality of composition modulation layers each formed of a first composition layer made of AlN and a second composition layer made of Al | 01-31-2013 |
20130043236 | HONEYCOMB STRUCTURE - A honeycomb structure is provided with a pair of electrode sections disposed on the side face of the honeycomb structure section. The honeycomb structure section has an electric resistivity of 1 to 200 Ωcm, and each of the pair of electrode sections is formed into a band-like shape extending in a cell extension direction of the honeycomb structure section. In a cross section perpendicular to the cell extension direction, one electrode section of the pair of electrode sections is disposed across the center O of the honeycomb structure section from the other electrode section of the pair of electrode sections. In a cross section perpendicular to the cell extension direction, 0.5 time the central angle of each of the electrode sections is 15 to 65°. | 02-21-2013 |
20130043237 | HONEYCOMB STRUCTURE - There is disclosed a honeycomb structure including a honeycomb structure section, and a pair of band-like electrode sections arranged on a side surface of the honeycomb structure section, an electrical resistivity of the honeycomb structure section is from 1 to 200 Ωcm, in a cross section which is perpendicular to a cell extending direction, the one electrode section is disposed on an opposite side of the other electrode section via the center O, an angle which is 0.5 time as large as a central angle of the electrode section is from 15 to 65°, and each of the electrode sections is formed so as to become thinner from a center portion in a peripheral direction toward both ends in the peripheral direction, and in the cross section which is perpendicular to the extending direction of the cells, the whole outer peripheral shape is a round shape. | 02-21-2013 |
20130043488 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate having excellent breakdown voltage properties in which a silicon substrate is used as a base. The epitaxial substrate includes a (111) single crystal Si substrate and a buffer layer including a plurality of first lamination units. Each of those units includes a composition modulation layer formed of a first composition layer made of AlN and a second composition layer made of Al | 02-21-2013 |
20130045137 | HONEYCOMB STRUCTURE - There is disclosed a honeycomb structure including a honeycomb structure section, and a pair of band-like electrode sections arranged on a side surface of the honeycomb structure section, an electrical resistivity of the honeycomb structure section is from 1 to 200 Ωcm, in a cross section which is perpendicular to an extending direction of cells, the one electrode section is disposed on an opposite side of the other electrode section via the center O, an angle which is 0.5 time as large as a central angle of the electrode section is from 15 to 65°, and each of the electrode sections is formed so as to become thinner from a center portion in a peripheral direction toward both ends in the peripheral direction in the cross section which is perpendicular to the cell extending direction in a honeycomb structure. | 02-21-2013 |
20130092953 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer. | 04-18-2013 |
20130098560 | CARBON FIBER-CONTAINING RESIN SHEET CARRYING APPARATUS - The carrying apparatus is a carbon fiber-containing resin sheet carrying apparatus for carrying a carbon fiber-containing resin sheet W heated in a heating furnace to a pressing device, comprising a slider 4 that moves between the heating furnace and the pressing device and a sheet holder 10 that is mounted thereon and chucks both the end parts of the carbon fiber-containing resin sheet W to apply tension. The sheet holder 10 can have a structure such that it comprises chuck claws 13, 16 and a tension unit 19 that displaces these chuck claws to the outside. The sheet holder 10 may have a structure such that it comprises a holding metal fitting with a spring, that is arranged inside a holding frame and a chuck claw that chucks this holding frame. | 04-25-2013 |
20130134439 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, PN JUNCTION DIODE, AND METHOD FOR MANUFACTURING AN EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT - Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial substrate for use in a semiconductor element, in which a group of group-III nitride layers are laminated on a base substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a substrate surface of the base substrate, includes: a channel layer made of a first group-III nitride having a composition of In | 05-30-2013 |
20130143092 | RACK FOR BATTERY PACKS - A rack for battery packs for transporting battery modules which are stored therein, and includes a bottom frame and struts located at four corners of the bottom frame. A fitting projection is formed at an upper end of each of the struts, a fitting hole into which the fitting projection is fitted is formed in a bottom part of each of the struts. When the rack is stacked one on top of another by fitting the fitting projection of each of the struts of a lower rack into the projection hole of each of the struts of an upper rack, the rack for battery pack can be used as an installation rack. Accordingly, a separate installation rack is not necessary, and returning a transportation rack is not necessary, either. | 06-06-2013 |
20130181327 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Provided is a crack-free epitaxial substrate having a small amount of dislocations in which a silicon substrate is used as a base substrate. An epitaxial substrate includes a substrate made of (111) single crystal silicon and a base layer group in which a plurality of base layers are laminated. Each of the plurality of base layers includes a first group-III nitride layer made of AlN and a second group-III nitride layer made of Al | 07-18-2013 |
Patent application number | Description | Published |
20130015134 | CARBON MEMBRANE AND METHOD FOR PERVAPORATION SEPARATION - There is provided a carbon membrane formed by carbonizing a phenol resin having at least one kind of atomic groups selected from the group consisting of a methylene bond, a dimethylene ether bond, and a methylol group, wherein the total mole content rate of the atomic groups is 100 to 180% with respect to the phenolic nuclei. | 01-17-2013 |
20130015466 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of In | 01-17-2013 |
20130022526 | CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A mixed powder was prepared by weighing Yb | 01-24-2013 |
20130023401 | CORROSION-RESISTANT MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Initially, an Yb | 01-24-2013 |
20130045424 | PLATE-LIKE PARTICLE FOR CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, CATHODE ACTIVE MATERIAL FILM FOR LITHIUM SECONDARY BATTERY, METHODS FOR MANUFACTURING THE PARTICLE AND FILM, METHOD FOR MANUFACTURING CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY - An object of the present invention is to provide a lithium secondary battery which has improved capacity, durability, and rate characteristic as compared with conventional lithium secondary batteries. A plate-like particle or a film for a lithium secondary battery cathode active material has a layered rock salt structure. The (003) plane is oriented in a direction intersecting the direction of the plate surface of the particle or film. | 02-21-2013 |
20130078326 | EXTRUDER - An extruder comprises an extruding section, a chamber drum, and a forming section. The extruding section kneads and extrudes a kneaded material including a ceramic raw material. The chamber drum includes a first space portion which extends from the extrusion port side of the extruding section in an extruding direction and allows the kneaded material to flow in the extruding direction, and a second space portion which extends from a downstream side of the first space portion in a downward direction, allows the kneaded material to flow in the downward direction different from the extruding direction, and has a discharge port to discharge the kneaded material. The forming section includes a die through which the kneaded material discharged through the discharge port of the chamber drum is pushed out, to extrude and form ceramic formed bodies. | 03-28-2013 |
20130093146 | CERAMIC-METAL BONDED BODY - To form an electrostatic chuck, a bonding sheet is applied onto the upper surface of a cooling plate and then the cooling plate is placed in a vacuum dryer at a pressure of 2,000 Pa or less for a pre-bake treatment at 120° C. to 130° C. for 15 to 40 hours, followed by natural cooling. A plate is then stacked on the bonding sheet so that the lower surface of the plate is aligned with the upper surface of the bonding sheet, which is applied onto the cooling plate. The resulting stacked body is placed in a heat-resistant resin bag, and is then placed in an autoclave and treated together for several hours under pressure and heat. | 04-18-2013 |
20130094165 | HIGH-CAPACITY MODULE INCLUDING THE PERIPHERAL CIRCUIT USING THE CIRCUIT BOARD AND THE CIRCUIT BOARD CONCERNED FOR PERIPHERAL CIRCUITS OF A HIGH-CAPACITY MODULE | 04-18-2013 |
20130101832 | NOBLE METAL COATING AND MANUFACTURING METHOD THEREOF - The noble metal coating of the present invention is formed on a ceramic substrate. The noble metal coating has a thickness of less than 2 μm and comprises a matrix metal and a ceramic fine particle. The matrix metal includes at least one metal selected from a group consisting of Pt, Pd, Ru, Rh, Os, Ir and Au as a main component. The content of the ceramic fine particle is preferably 3 to 30 parts by weight with respect to 100 parts by weight of the matrix metal. The ratio between the average particle size of the ceramic fine particle and the thickness of the noble metal coating is preferably 1/1.5 to 1/400. | 04-25-2013 |
20130112078 | SILICA FILM FILTER AND PROCESS FOR PRODUCING SILICA FILM FILTER - There is provided a silica membrane filter having performance of selectively separating an aromatic compound and performance of selectively separating an alcohol. The silica membrane filter is provided with a porous substrate and a silica membrane. The ratio of a He gas permeation amount to an N | 05-09-2013 |
20130122441 | GAS SENSOR ELEMENT TREATMENT METHOD - A gas sensor element is heated at a temperature of 500° C. or higher for 15 minutes or more in a treatment atmosphere containing one or more gases selected from the gas group consisting of nitrogen (N | 05-16-2013 |
20130126352 | GAS SENSOR - In a gas sensor | 05-23-2013 |
20130126420 | CERAMIC FILTER - A ceramic filter is provided with a porous substrate | 05-23-2013 |
20130145735 | HONEYCOMB FILTER, AND MANUFACTURING METHOD OF THE SAME - A honeycomb filter includes a tubular honeycomb structure having porous partition walls with which there are formed a plurality of cells extending from one end surface to the other end surface to become through channels of a fluid; and plugged portions arranged in one open end portion of each of predetermined cells and the other open end portion of each of the remaining cells, porosities of the partition walls are 46% or less, a pore volume ratio of pores having pore diameters of 40 μm or more is 7.5% or less, and a pore volume ratio of pores having pore diameters of 10 μm or less is 25% or less, a permeability of the honeycomb structure is 0.8 μm | 06-13-2013 |
20130146339 | CIRCUIT BOARD FOR HIGH-CAPACITY MODULES, AND A PRODUCTION METHOD OF THE CIRCUIT BOARD - A circuit board including a substrate having first and second dielectric layers of first and second dielectrics, the second dielectric containing 8 mass % or more of a glass net former component. At least one portion of an inner layer electrode has approximately two principal surfaces parallel to principal surfaces of the circuit board and a thickness of not less than 50 micrometers in a normal direction of the principal surfaces. The inner layer electrode and second dielectric layer contact with each other, and a ratio t/T of sum total thickness t of the second dielectric layer in contact with the inner layer electrode in a normal direction of the principal surface to sum total thickness T of the first dielectric layer in a normal direction of the principal surface is 0.1 or more. | 06-13-2013 |
20130148314 | CIRCUIT BOARD FOR PERIPHERAL CIRCUITS OF HIGH-CAPACITY MODULES, AND A HIGH-CAPACITY MODULE INCLUDING A PERIPHERAL CIRCUIT USING THE CIRCUIT BOARD - A drive circuit is laminated via a high exothermic element disposed on a power circuit, and it is configured so that the average thermal expansion coefficient of the side of the power circuit of the drive circuit board may be larger than the average thermal expansion coefficient of the side opposite to the power circuit. Thereby, the drive circuit board will be curved in the same direction as the power circuit board when the power circuit board is curved due to heat generation from the high exothermic element accompanying the operation of the module. Thereby, in a high-capacity module, while attaining reduction in size and weight, reduction in serge, and reduction in a loss, poor junction between the high exothermic element of the power circuit and the drive circuit board can be suppressed and heat generating from the high exothermic element can be more effectively released. | 06-13-2013 |
20130161690 | SEMICONDUCTOR DEVICE - A semiconductor device contains a first conductive type semiconductor substrate, at least one cathode formed on one surface of the semiconductor substrate, an anode formed on the other surface of the semiconductor substrate, and a gate electrode electrically insulated from the cathode, formed on the one surface of the semiconductor substrate to control current conduction between the cathode and the anode. The semiconductor substrate has a thickness of less than 460 rm. | 06-27-2013 |
20130161691 | SEMICONDUCTOR DEVICE - A semiconductor device contains a semiconductor substrate, a cathode, an anode, and a gate electrode. The semiconductor device has a cathode segment disposed in a portion corresponding to at least the cathode, an anode segment disposed in a portion corresponding to the anode, a plurality of embedded segments disposed in a portion closer to the cathode segment than to the anode segment, a takeoff segment disposed between the gate electrode and the embedded segments to electrically connect the gate electrode to the embedded segments, and a channel segment disposed between the adjacent embedded segments. | 06-27-2013 |
20130168734 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device of normally-off operation type having a low on-resistance. An epitaxial substrate for it includes: a base substrate; a channel layer made of a first group-III nitride having a composition of In | 07-04-2013 |
20130181629 | DISCHARGE DEVICE - A pulse controller performs a control to apply at least one high-energy first pulse P | 07-18-2013 |
20130196842 | GLASS-CERAMIC COMPOSITE MATERIAL - The present invention is directed to stably achieve a good thermal conductivity in a glass-ceramic composite material in which aluminum nitride particles are used as filler particles. | 08-01-2013 |