Patent application number | Description | Published |
20100041221 | HIGH PERFORMANCE CMOS CIRCUITS, AND METHODS FOR FABRICATING SAME - The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits that each contains at least a first and a second gate stacks. The first gate stack is located over a first device region (e.g., an n-FET device region) in a semiconductor substrate and comprises at least, from bottom to top, a gate dielectric layer, a metallic gate conductor, and a silicon-containing gate conductor. The second gate stack is located over a second device region (e.g., a p-FET device region) in the semiconductor substrate and comprises at least, from bottom to top, a gate dielectric layer and a silicon-containing gate conductor. The first and second gate stacks can be formed over the semiconductor substrate in an integrated manner by various methods of the present invention. | 02-18-2010 |
20110260213 | MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS - Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include at least one FET gate stack located on an upper surface of a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate at a footprint of the at least one FET gate stack. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. The structure further includes embedded stressor elements located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each of the embedded stressor elements includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material located atop the lower layer. The lower layer of the first epitaxy doped semiconductor material has a lower content of dopant as compared to the upper layer of the second epitaxy doped semiconductor material. The structure further includes at least one monolayer of dopant located within the upper layer of each of the embedded stressor elements. The at least one monolayer of dopant is in direct contact with an edge of either the source extension region or the drain extension region. | 10-27-2011 |
20120261717 | MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS - Semiconductor structures are disclosed that include at least one FET gate stack located on a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. Embedded stressor elements are located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each stressor element includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material. At least one monolayer of dopant is located within the upper layer of each of the embedded stressor elements. | 10-18-2012 |
20140054700 | Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer - Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and at least one active area formed in the wafer; a gate stack over a portion of the at least one active area which serves as a channel of the device; source and drain regions of the device adjacent to the gate stack, wherein the source and drain regions of the device include a semiconductor material selected from: silicon and silicon germanium; and silicide contacts to the source and drain regions of the device, wherein an interface is present between the silicide contacts and the semiconductor material, and wherein the interface has an interface roughness of less than about 5 nanometers. | 02-27-2014 |
20140057399 | Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer - Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a cap layer-free method for forming a silicide is provided. The method includes the following steps. A semiconductor material selected from: silicon and silicon germanium is provided. At least one silicide metal is deposited on the semiconductor material. The semiconductor material and the at least one silicide metal are annealed at a temperature of from about 400° C. to about 800° C. for a duration of less than or equal to about 10 milliseconds to form the silicide. A FET device and a method for fabricating a FET device are also provided. | 02-27-2014 |
20140357082 | High-Rate Chemical Vapor Etch of Silicon Substrates - Methods of etching a silicon substrate at a high rate using a chemical vapor etching process are provided. A silicon substrate may be etched by heating the silicon substrate in a process chamber and then flowing hydrochloric acid and a germanium-carrying compound into the process chamber. The substrate may be heated to at least 700° C. The hydrochloric acid flow rate may be at least approximately 100 (standard cubic centimeters per minute) sccm. In some embodiments, the hydrochloric acid flow rate may be between approximately 10 slm and approximately 20 standard liters per minute (slm). The germanium-carrying compound flow rate may be at least approximately 50 sccm. In some embodiments, the germanium-carrying compound flow rate may be between approximately 100 sccm and approximately 500 sccm. The etching may extend fully through the silicon substrate. | 12-04-2014 |
Patent application number | Description | Published |
20140274149 | System and Method for Localizing Wireless Devices - Method and apparatus are provided for localizing wireless devices. In one such arrangement, a method of fingerprinting includes receiving, by a first network element, a plurality of records from a second network element and determining a first segment. A first drive test record of the plurality of records can be assigned to the first segment, and a second segment can be determined, where a first area of the first segment is not equal to a second area of the second segment. A second drive test record of the plurality of records can be assigned to the second segment. | 09-18-2014 |
20150133159 | System and Method for Localization and Traffic Density Estimation via Segmentation and Calibration Sampling - Embodiments are provided for calibration, preprocessing, and segmentation for user localization and network traffic density estimation. The embodiments include sending, from a network component, a request to a plurality of user equipment (UEs) to participate in reporting localization data. Reports for localization data including no-lock reports are received from at least some of the UEs. The no-lock reports indicate indoor UEs among the UEs. The network preprocesses the localization data by eliminating, from the localization data, data that increases the total noise to signal ratio. The localization data is then processed using a model that distinguishes between different buildings. This includes associating, according to a radio map, radio characteristics in the localization data with corresponding bins in a non-uniform grid of coverage. The non-uniform grid is predetermined to maximize uniqueness between the radio characteristics. The indoor UEs are associated with corresponding buildings using the no-lock reports data. | 05-14-2015 |
Patent application number | Description | Published |
20110069309 | COMB-BASED SPECTROSCOPY WITH SYNCHRONOUS SAMPLING FOR REAL-TIME AVERAGING - A method of comb-based spectroscopy with synchronous sampling for real-time averaging includes measuring the full complex response of a sample in a configuration analogous to a dispersive Fourier transform spectrometer, infrared time domain spectrometer, or a multiheterodyne laser spectrometer. An alternate configuration of a comb-based spectrometer for rapid, high resolution, high accuracy measurements of an arbitrary cw waveform. | 03-24-2011 |
20110285980 | OPTICAL FREQUENCY COMB-BASED COHERENT LIDAR - A coherent laser radar that uses two coherent femtosecond fiber lasers to perform absolute ranging at long distance. One coherent femtosecond fiber lasers acts as a source and the other as a local oscillator for heterodyne detection of the return signal from a cooperative target. The system simultaneously returns a time-of-flight range measurement for coarse ranging and an interferometric range measurement for fine ranging which is insensitive to spurious reflections that can cause systematic errors. The range is measured with at least 3 μm precision in 200 μs and 5 nm precision in 60 ms over a 1.5 m ambiguity range. This ambiguity range can be extended to 30 km through reversal of signal and LO source roles. | 11-24-2011 |
20130342836 | COMB-BASED SPECTROSCOPY WITH SYNCHRONOUS SAMPLING FOR REAL-TIME AVERAGING - A method of comb-based spectroscopy for measuring a CW source at time-bandwidth limited resolution by using frequency combs with a high degree of mutual coherence (<1 radian phase noise). | 12-26-2013 |
20150253645 | FIBER FREQUENCY COMB ARTICLE - A frequency comb article includes: an oscillator to produce an oscillator frequency comb that includes: a first power; and a first optical bandwidth; a fiber amplifier to receive the oscillator frequency comb from the oscillator and to produce an amplifier frequency comb based on the oscillator frequency comb, the amplifier frequency comb includes: a second power that is greater than the first power; and a second optical bandwidth that is greater than the first optical bandwidth; a nonlinear fiber to receive the amplifier frequency comb from the fiber amplifier and to produce a spectrally broadened frequency comb based on the amplifier frequency comb, the spectrally broadened frequency comb including a third optical bandwidth that is greater than the second optical bandwidth; a frequency doubler to receive the spectrally broadened frequency comb from the nonlinear fiber and to provide a doubled frequency comb including: a plurality of fundamental frequencies from the spectrally broadened frequency comb; and a plurality of doubled frequencies, based on the plurality of fundamental frequencies; and an interferometer to receive the doubled frequency comb from frequency doubler and to provide a signal frequency comb based on the doubled frequency comb, the signal frequency comb including the plurality of doubled frequencies that is temporally overlapped and spatially overlapped with the plurality of fundamental frequencies, the fiber amplifier and the nonlinear fiber include a polarization maintaining fiber, and the oscillator, frequency doubler, and interferometer are entirely polarization maintaining. | 09-10-2015 |
Patent application number | Description | Published |
20120043686 | Golf Balls including Multiple Dimple Types and/or Multiple Layers of Different Hardnesses - Golf balls may include a first pole, a second pole, and a seam located between the first and second poles. Dimples are formed on a surface of the ball in a pattern that includes a plurality of repeating sectors around each pole of the ball. The sectors on one ball half are rotationally offset across the seam line from the sectors on the other ball half. Additionally, each individual sector includes a line of symmetry over which the dimple pattern on one half of the sector is mirrored on the other half. A variety of different dimple types also may be arranged on a golf ball surface, e.g., within the sectors described above. Additional aspects of this invention relate to the features of various layers of a multi-piece golf ball and to methods of making golf balls having at least some of the features mentioned above. | 02-23-2012 |
20120046127 | Golf Balls including Multiple Dimple Types and/or Multiple Layers of Different Hardnesses - Golf balls may include a first pole, a second pole, and a seam located between the first and second poles. Dimples are formed on a surface of the ball in a pattern that includes a plurality of repeating sectors around each pole of the ball. The sectors on one ball half are rotationally offset across the seam line from the sectors on the other ball half Additionally, each individual sector includes a line of symmetry over which the dimple pattern on one half of the sector is mirrored on the other half. A variety of different dimple types also may be arranged on a golf ball surface, e.g., within the sectors described above. Additional aspects of this invention relate to the features of various layers of a multi-piece golf ball and to methods of making golf balls having at least some of the features mentioned above. | 02-23-2012 |
20120046130 | Golf Balls including Multiple Dimple Types and/or Multiple Layers of Different Hardnesses - Golf balls may include a first pole, a second pole, and a seam located between the first and second poles. Dimples are formed on a surface of the ball in a pattern that includes a plurality of repeating sectors around each pole of the ball. The sectors on one ball half are rotationally offset across the seam line from the sectors on the other ball half. Additionally, each individual sector includes a line of symmetry over which the dimple pattern on one half of the sector is mirrored on the other half. A variety of different dimple types also may be arranged on a golf ball surface, e.g., within the sectors described above. Additional aspects of this invention relate to the features of various layers of a multi-piece golf ball and to methods of making golf balls having at least some of the features mentioned above. | 02-23-2012 |
20120046131 | Golf Balls including Multiple Dimple Types and/or Multiple Layers of Different Hardnesses - Golf balls may include a first pole, a second pole, and a seam located between the first and second poles. Dimples are formed on a surface of the ball in a pattern that includes a plurality of repeating sectors around each pole of the ball. The sectors on one ball half are rotationally offset across the seam line from the sectors on the other ball half. Additionally, each individual sector includes a line of symmetry over which the dimple pattern on one half of the sector is mirrored on the other half. A variety of different dimple types also may be arranged on a golf ball surface, e.g., within the sectors described above. Additional aspects of this invention relate to the features of various layers of a multi-piece golf ball and to methods of making golf balls having at least some of the features mentioned above. | 02-23-2012 |
20120046132 | Golf Balls including Multiple Dimple Types and/or Multiple Layers of Different Hardnesses - Golf balls may include a first pole, a second pole, and a seam located between the first and second poles. Dimples are formed on a surface of the ball in a pattern that includes a plurality of repeating sectors around each pole of the ball. The sectors on one ball half are rotationally offset across the seam line from the sectors on the other ball half. Additionally, each individual sector includes a line of symmetry over which the dimple pattern on one half of the sector is mirrored on the other half. A variety of different dimple types also may be arranged on a golf ball surface, e.g., within the sectors described above. Additional aspects of this invention relate to the features of various layers of a multi-piece golf ball and to methods of making golf balls having at least some of the features mentioned above. | 02-23-2012 |