Patent application number | Description | Published |
20090178621 | SUBSTRATE TREATING SYSTEM FOR DEPOSITING A METAL GATE ON A HIGH-K DIELECTRIC FILM AND IMPROVING HIGH-K DIELECTRIC FILM AND METAL GATE INTERFACE - An apparatus to improve high-k dielectric film and metal gate interface in the fabrication of MOSFET by depositing a metal gate on a high-k dielectric comprising an annealing step annealing a substrate with high-k dielectric film deposited thereon in a thermal annealing module and a depositing step depositing a metal gate material on said annealed substrate in a metal gate deposition module, characterized that said annealing step and depositing step are carried out consecutively without a vacuum break. | 07-16-2009 |
20090218217 | SPUTTERING APPARATUS FOR DEPOSITING A HIGHER PERMITTIVITY DIELECTRIC FILM - A method of depositing a high permittivity dielectric film on a doped silicon or silicon compound layer of a wafer. The method includes a first step of nitriding a specific element (A) such as hafnium Hf to form a nitride film (A | 09-03-2009 |
20100023612 | Network system, information management server, and information management method - To reduce the load on a management server in a load distributed system, a server list manager | 01-28-2010 |
20100028536 | METAL COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS OF FORMING THIN FILM - A metal compound represented by general formula (I): | 02-04-2010 |
20100033081 | 4-AMINOFLUORENE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE - To provide a compound excellent in light emitting properties and an organic light emitting device having the compound. The compound is a 4-aminofluorene compound represented by the following general formula (1): | 02-11-2010 |
20100247765 | METAL COMPOUND, MATERIAL FOR CHEMICAL VAPOR PHASE GROWTH, AND PROCESS FOR FORMING METAL-CONTAINING THIN FILM - A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. | 09-30-2010 |
20110198576 | AMINO COMPOUND FOR ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An amino compound for an organic light-emitting device of general formula [1]: | 08-18-2011 |
20130140287 | PROCESS AND APPARATUS FOR ABLATION - An ablation method including a steps of ablating a region of a substrate ( | 06-06-2013 |
20140242263 | ALUMINUM PRECURSOR, METHOD OF FORMING A THIN FILM AND METHOD OF FORMING A CAPACITOR USING THE SAME - An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3. | 08-28-2014 |
20140273512 | TRIALKYLSILANE SILICON PRECURSOR COMPOUND, METHOD OF FORMING A LAYER USING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE LAYER - A trialkylsilane-based silicon precursor compound may be expressed by the following chemical formula 1. | 09-18-2014 |