Nakjin
Nakjin Choi, Daejeon KR
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20110272610 | MICRO-VALVE STRUCTURE INCLUDING POLYMER ACTUATOR AND LAB-ON-A-CHIP MODULE - Provided are a micro-valve structure and a lab-on-a-chip module that include a polymer actuator. The micro-valve structure may include a flexible structure disposed on a substrate, and the polymer actuator inserted into the flexible structure. At this time, the flexible structure has a valve portion defining a microchannel and the polymer actuator is separated from the microchannel by the flexible structure. In addition, the polymer actuator is formed to change a width of the microchannel by controlling a displacement of the valve portion. | 11-10-2011 |
Nakjin Choi, Gyeonggi-Do KR
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20150244337 | METHOD AND APPARATUS FOR AUTOMATICALLY CONTROLLING GAIN BASED ON SENSITIVITY OF MICROPHONE IN ELECTRONIC DEVICE - The present disclosure relates to a method and an apparatus for automatically controlling a gain in an electronic device based on a sensitivity of microphone. The method according to an embodiment of the present disclosure includes outputting a reference audio to a speaker and obtaining a sound signal output by the speaker through a microphone, comparing a parameter of the obtained sound signal with a stored parameter, and adjusting a gain of the microphone based on a result of the comparing. | 08-27-2015 |
Nakjin Kim, Daejeon KR
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20100119935 | CYLINDRICAL SECONDARY BATTERY OF IMPROVED SAFETY - Disclosed herein is a cylindrical secondary battery constructed in a structure in which a crimping region, at which a cap assembly is mounted to the open upper end of a cylindrical container having an electrode assembly mounted therein, is formed at the upper end of the container, wherein the crimping region is constructed in a structure in which the upper end of the crimping region is gently bent at a predetermined radius of curvature (R), such that the crimping region surrounds a gasket located at the inside of the crimping region, the bent front end extends inward, such that the bent end presses the gasket, and an inclination of a predetermined angle is formed at the sidewall of the crimping region, such that the upper part of the crimping region is directed inward. According to the secondary battery of the present invention, the sealability of the gasket is improved, and external impacts are partially absorbed by the inclination formed at the crimping region. Consequently, the deformation of the crimping region is minimized, whereby the leakage of the electrolyte is prevented, and the safety of the battery is greatly improved. | 05-13-2010 |
Nakjin Son, Suwon-Si KR
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20140203357 | Semiconductor Device and Method of Manufacturing the Same - According to a method of manufacturing a semiconductor device, hard mask lines are formed in parallel in a substrate and the substrate between the hard mask lines is etched to form grooves. A portion of the hard mask line and a portion of the substrate between the grooves are etched. A top surface of the etched portion of the substrate between the grooves is higher than a bottom surface of the groove. A conductive layer is formed to fill the grooves. The conductive layer is etched to form conductive patterns in the grooves, respectively. | 07-24-2014 |
20140327087 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device may include a substrate having a first region and a second region on a surface thereof, and a first semiconductor fin on the first region of the substrate with the first semiconductor fin including a first trench therethrough. A first gate electrode may be provided in the first trench, and first and second source/drain regions may be provided in the first semiconductor fin, with the first gate electrode between the first and second source/drain regions. A second semiconductor fin may be provided on the second region of the substrate with the second semiconductor fin including a second trench therethrough, a second gate electrode may be provided in the second trench, and third and fourth source/drain regions may be provided in the second semiconductor fin with the second gate electrode being between the third and fourth source/drain regions. | 11-06-2014 |