Patent application number | Description | Published |
20140350249 | THERAPEUTIC AGENT FOR CEREBRAL INFARCTION - The present invention provides a novel therapeutic drug for cerebral infarction, which contains a piperazine compound as an active ingredient. The compound of the present invention can be provided as a novel therapeutic drug for cerebral infarction having an effect of suppressing brain injury volume or improving neurological deficit, since it suppresses production of plural inflammatory cytokines and chemokines present in the brain such as TNF-α, IL-1β, IL-6 and MCP-1 and the like. | 11-27-2014 |
20140350250 | THERAPEUTIC AGENT FOR CEREBRAL INFARCTION - The present invention provides a novel therapeutic drug for cerebral infarction, which contains a piperazine compound as an active ingredient. The compound of the present invention can be provided as a novel therapeutic drug for cerebral infarction having an effect of suppressing brain injury volume or improving neurological deficit, since it suppresses production of plural inflammatory cytokines and chemokines present in the brain such as TNF-α, IL-1β, IL-6 and MCP-1 and the like. | 11-27-2014 |
20150104483 | THERAPEUTIC AGENT FOR CEREBRAL INFARCTION - The present invention provides a novel therapeutic drug for cerebral infarction, which contains a piperazine compound as an active ingredient. The compound of the present invention can be provided as a novel therapeutic drug for cerebral infarction having an effect of suppressing brain injury volume or improving neurological deficit, since it suppresses production of plural inflammatory cytokines and chemokines present in the brain such as TNF-α, IL-1β, IL-6 and MCP-1 and the like. | 04-16-2015 |
20150105400 | THERAPEUTIC AGENT FOR CEREBRAL INFARCTION - The present invention provides a novel therapeutic drug for cerebral infarction, which contains a piperazine compound as an active ingredient. The compound of the present invention can be provided as a novel therapeutic drug for cerebral infarction having an effect of suppressing brain injury volume or improving neurological deficit, since it suppresses production of plural inflammatory cytokines and chemokines present in the brain such as TNF-β, IL-1β, IL-6 and MCP-1 and the like. | 04-16-2015 |
Patent application number | Description | Published |
20120091452 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 04-19-2012 |
20120138923 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a thin film transistor including an oxide semiconductor layer ( | 06-07-2012 |
20120199891 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a gate electrode ( | 08-09-2012 |
20120218485 | ACTIVE MATRIX SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL INCLUDING THE SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixels arranged in a matrix, a plurality of capacitor lines ( | 08-30-2012 |
20120241750 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device includes: a thin film transistor having a gate line ( | 09-27-2012 |
20120326144 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A method includes: a step of forming a gate electrode ( | 12-27-2012 |
20130023086 | ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - An active matrix substrate includes a plurality of pixel electrodes (P) provided in a matrix, and a plurality of TFTs ( | 01-24-2013 |
20130026462 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THE SAME, AND ACTIVE MATRIX SUBSTRATE - A method for manufacturing a thin film transistor includes the step of forming a gate electrode ( | 01-31-2013 |
20130056741 | DISPLAY PANEL AND THIN FILM TRANSISTOR SUBSTRATE - A display panel ( | 03-07-2013 |
20130092923 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - An active matrix substrate includes a plurality of pixel electrodes ( | 04-18-2013 |
20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 04-25-2013 |
20130105788 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE | 05-02-2013 |
20130112970 | THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD FOR THE SAME - A TFT substrate ( | 05-09-2013 |
20130134411 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device ( | 05-30-2013 |
20130140552 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device ( | 06-06-2013 |
20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 08-01-2013 |
20130207114 | ACTIVE MATRIX SUBSTRATE AND DISPLAY PANEL - An active matrix substrate ( | 08-15-2013 |
20140147966 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - The semiconductor device ( | 05-29-2014 |
20140367683 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR ARRAY SUBSTRATE AND PRODUCTION METHOD THEREOF, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor having stable transistor characteristics, a thin film transistor having a channel layer formed of the oxide semiconductor and a production method thereof, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor. The oxide semiconductor includes indium, gallium, zinc, and oxygen as constituent atoms, and the oxygen content of the oxide semiconductor is 87% to 95% of the stoichiometric condition set as 100%, in terms of atomic units. | 12-18-2014 |
20150287742 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR PRODUCING SAME - Each of the auxiliary capacitors ( | 10-08-2015 |
Patent application number | Description | Published |
20120301047 | IMAGE PROCESSING APPARATUS, DISPLAY APPARATUS PROVIDED WITH SAME, AND IMAGE PROCESSING METHOD - Provided is an image processing apparatus that obtains an effect of improving perceived definition even when an input image signal does not include much of a high range component. The image processing apparatus ( | 11-29-2012 |
20120307186 | IMAGE DISPLAY DEVICE AND IMAGE DISPLAY METHOD - Provided is an image display device that has pixels each of which includes sub-pixels of four or more colors, and displays a high-definition image that has been subjected to sub-pixel-level filtering processing. The image display device includes a display panel ( | 12-06-2012 |
20120313843 | DISPLAY DEVICE - A display device according to the present invention includes a plurality of pixels arranged in a matrix. Each of the plurality of pixels is formed of four or five types of sub pixels that display different colors from each other. In each pixel, a first sub pixel that displays a color having the highest luminance and a second sub pixel that displays a color having the second highest luminance are located so as not to be adjacent to each other. The four or five types of sub pixels include a plurality of display units, each of which is capable of displaying a specific color and is formed of one sub pixel or two or more continuous sub pixels. In the display device according to the present invention, when an input image has a resolution higher than a display resolution defined by a total number of the plurality of pixels, each of the plurality of display units is usable as a virtual pixel for providing display. According to the present invention, a multiple primary color display device which suppresses the decline of display quality even when the resolution of an input image is higher than the resolution of the display device is provided. | 12-13-2012 |
20120313986 | IMAGE DISPLAY DEVICE AND IMAGE DISPLAY METHOD - Provided is an image display device having pixels each of which includes sub-pixels of four or more colors and requires fewer dither matrices. This image display device includes a display section in which color filters of sub-pixel colors that are M colors in total including three principal colors of red, green, and blue, as well as at least one color other than the three principal colors are arranged regularly; and a gray-scale processing section ( | 12-13-2012 |
20120314969 | IMAGE PROCESSING APPARATUS AND DISPLAY DEVICE INCLUDING THE SAME, AND IMAGE PROCESSING METHOD - An image processing apparatus where noise in a dark region indicated by an input image signal may be reduced and perceived fineness of texture may be enhanced is provided. It includes: a high pass filter ( | 12-13-2012 |
20140104301 | IMAGE DISPLAY DEVICE - There is provided an image display device, in which a pixel includes sub-pixels of four or more colors that include a color in addition to the three primary colors, and which can display a high-quality image in which false colors or artifacts are suppressed. The image display device includes a pixel area in which a plurality of pixels P are arranged in a matrix shape, and each of the pixels P includes m (m is an integer which is equal to or greater than 4) sub-pixels SP. When it is assumed that the colors of the m sub-pixels SP included in one pixel are C1, C2, . . . , and Cm, the m sub-pixels SP which are sequentially arrayed from an arbitrary position include all of the colors of C1, C2, . . . , and Cm in both the vertical direction and the horizontal direction in the pixel area. | 04-17-2014 |
20140152714 | MULTI-PRIMARY COLOR DISPLAY DEVICE - A multiple primary color display device ( | 06-05-2014 |
20150294628 | MULTI-PRIMARY COLOR DISPLAY DEVICE - A signal conversion circuit ( | 10-15-2015 |
Patent application number | Description | Published |
20100230640 | SEMICONDUCTIVE RUBBER BELT, AND PROCESS FOR PRODUCING THE SAME - An object of the present invention is to provide a semiconductive rubber belt wherein a variation in the electric resistance is decreased, in particular, in the belt circumferential direction so that high-quality images can be formed, and a process for producing the same. In order to achieve the object, in a case where on any single straight line extended in the belt circumferential direction, the maximum value of the molecular orientation degree MOR-C of the semiconductive rubber belt, the minimum value thereof, and the average thereof are set to satisfy a specified relationship. | 09-16-2010 |
20130009334 | SEMICONDUCTIVE RUBBER BELT, AND PROCESS FOR PRODUCING THE SAME - An object of the present invention is to provide a semiconductive rubber belt wherein a variation in the electric resistance is decreased, in particular, in the belt circumferential direction so that high-quality images can be formed, and a process for producing the same. In order to achieve the object, in a case where on any single straight line extended in the belt circumferential direction, the maximum value of the molecular orientation ratio correction value MOR-C of the semiconductive rubber belt, the minimum value thereof, and the average thereof are set to satisfy a specified relationship. | 01-10-2013 |
Patent application number | Description | Published |
20110164013 | DISPLAY PANEL AND DISPLAY PANEL INSPECTION METHOD - The present invention provides a display panel ( | 07-07-2011 |
20120154354 | PHOTOSENSOR AND DISPLAY DEVICE - By reducing the potential drop of a storage node that occurs due to feedthrough, the capacitance of a storage capacitor is reduced and sensor sensitivity is improved. In a photosensor, the first terminal of a storage capacitor (C | 06-21-2012 |
20130057527 | DISPLAY DEVICE - Provided is a display device that is capable of ensuring a wide dynamic range of an optical sensor even in the case where an offset due to ambient temperature changes is compensated with use of an output of a reference element. The display device has optical sensors in a pixel region of an active matrix substrate ( | 03-07-2013 |
20130162602 | DISPLAY DEVICE WITH OPTICAL SENSOR - A plurality of sensor circuits each including an optical sensor and a charge retention transistor each provided between a reset line and an accumulation node are arranged in a pixel region of a display device. In a sensing period, a LOW-level voltage is applied as a reset cancellation voltage to the reset line RSTa, and a HIGH-level voltage is applied to a control line CLKa to control the charge retention transistor to be in an ON state. In a period other than the sensing period, the LOW-level voltage is applied to the control line CLKa to control the charge retention transistor to be in an OFF state, and the HIGH-level voltage is applied as a retention voltage to the reset line RSTa. Thus, a drain-source voltage Vds of the charge retention transistor is lowered, a leakage current through the charge retention transistor is reduced, and a light detection accuracy is enhanced. A substantially middle voltage between a reset voltage and a voltage at an accumulation node at the sensing of a maximum amount of light may be used as the retention voltage. | 06-27-2013 |
20140339400 | METHOD FOR OPERATING OPTICAL SENSOR CIRCUIT, AND METHOD FOR OPERATING DISPLAY APPARATUS PROVIDED WITH OPTICAL SENSOR CIRCUIT - In a method of operating an optical sensor circuit ( | 11-20-2014 |
20140375622 | DISPLAY DEVICE AND DISPLAY METHOD - A scanning order calculating portion ( | 12-25-2014 |
20150145842 | DISPLAY DEVICE AND DISPLAY METHOD - When there are a plurality of rows with the same display content, a scanning order calculating portion ( | 05-28-2015 |
20150179120 | DISPLAY DEVICE AND DISPLAY METHOD - Upon each detection of an image switch by a display switch detection portion ( | 06-25-2015 |
20150295565 | PULSE GENERATION CIRCUIT, SHIFT REGISTER CIRCUIT, AND DISPLAY DEVICE - A pulse generation circuit is configured with a plurality of transistors of a single conductivity type. The pulse generation circuit includes: an output unit including a current limiting element configured to supply, by a predetermined current, a first voltage from a first power supply line supplied with the first voltage to an output terminal, the output unit being configured to perform a bootstrap operation that outputs the first voltage to the output terminal in response to a received input signal; and an output control unit configured to initiate the bootstrap operation when the output terminal transitions to the first voltage, and after the output terminal transitions to the first voltage, terminate the bootstrap operation and perform control so as to output the first voltage from the current limiting element to the output terminal. | 10-15-2015 |
20150325168 | DRIVE CIRCUIT, DISPLAY DEVICE AND DRIVING METHOD - A retention unit which retains input data, and a light emission control unit which compensates a value of a drive current that flows to a light emission element based on the input data which is retained in the retention unit, are provided in each pixel unit of a display device. While the light emission control unit displays input data of an image of an Nth frame during a light emission period TL (N) by driving the light emission element, input data of an image of an (N+1)th frame is written to the retention unit which becomes a pair together with the light emission control unit, as processing in a write processing period TS (N+1) of the (N+1)th frame. | 11-12-2015 |