Muscara
Anna Muscara, Patti IT
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20100163709 | SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor. | 07-01-2010 |
20110122485 | ELECTRICALLY PUMPED LATERAL EMISSION ELECTROLUMINESCENT DEVICE INTEGRATED IN A PASSIVE WAVEGUIDE TO GENERATE LIGHT OR AMPLIFY A LIGHT SIGNAL AND FABRICATION PROCESS - An electrically pumped lateral emission electroluminescent device may include a slotted waveguide including a top silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith, and a bottom silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith. A core layer may include silicon oxide between the top and bottom layers and a thickness less than 70 nm. A core layer refraction index may be greater than each of the top and bottom layer refraction indices. A core layer portion may be in a direction of light propagation and may be doped with erbium, and may include silicon nanocrystals. A portion of each of the top and bottom layers may coincide with the core layer portion and may be doped so that the top and bottom layer portions are electrically conductive to define top and bottom plates. | 05-26-2011 |
20130264949 | SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor. | 10-10-2013 |
20140339398 | AVALANCHE PHOTODIODE OPERATING IN GEIGER MODE INCLUDING A STRUCTURE FOR ELECTRO-OPTICAL CONFINEMENT FOR CROSSTALK REDUCTION, AND ARRAY OF PHOTODIODES - An avalanche photodiode includes a cathode region and an anode region. A lateral insulating region including a barrier region and an insulating region surrounds the anode region. The cathode region forms a planar optical guide within a core of the cathode region, the guide being configured to guide photons generated during avalanche. The barrier region has a thickness extending through the planar optical guide to surround the core and prevent propagation of the photons beyond the barrier region. The core forms an electrical-confinement region for minority carriers generated within the core. | 11-20-2014 |
Anna Muscara, Patti (messina) IT
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20100151603 | METHOD OF MANUFACTURING A RESONANT CAVITY OPTICAL RADIATION EMITTING DEVICE - A method of manufacturing a device for emission of optical radiation integrated on a substrate of a semiconductor material includes the steps of forming a first mirror, a second mirror of a dielectric type, and an active layer comprising a main zone designed to be excited to generate the radiation. First and second electrically conductive layers are formed and arranged to produce a generation electric signal of an electric field to which an excitation current of the main zone is associated. A dielectric region is formed between the first and the second layers by partially oxidizing the first electrically conductive layer to and thereby obtaining a thermal oxide layer, to space out corresponding peripheral portions of the first and second layers so that the electric field present in the main zone is greater than that present between the peripheral portions thus favouring a corresponding generation of the excitation current in the main zone. | 06-17-2010 |
Domenico Muscara, Muehlhausen DE
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20150091365 | Chisel Device And Wear-Protected Chisel For Ground Milling Machines - The present invention relates to a chisel device for a ground milling machine, comprising a chisel holder having a mounting orifice and a milling chisel, wherein the milling chisel has a basic body of, in particular, a uniform material and has a shaft and a tool region, said shaft being held, under working conditions, in the mounting orifice while the tool region (P) protrudes, under working conditions, from the chisel holder, wherein said milling chisel has a wear protection cap consisting of carbide and having a tip and a protective jacket, wherein the wear protection cap is positioned on the tool region (P) in such a manner that it covers at least 70% of the external surface of the tool region (P). The present invention also relates to a milling chisel for such a chisel device. | 04-02-2015 |
Giuseppe Muscara, Arconate IT
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20130126308 | SYSTEM FOR CHANNELLING AND UNLOADING HOT-ROLLED MATERIALS - A system for channeling and unloading hot-rolled materials downstream of a unit for cutting to size and upstream of a cooling bed, includes feeding a rolled material at high speed inside at least one channeling unit and unloading the rolled material with the channeling unit onto the cooling bed. The channeling unit has a supporting structure with at least one travel channel which is open downwards and with which at least one electromagnet element is associated. Preferably, the at least one travel channel is shaped in the manner of an inverted U. Preferably, the system has at least one pair of adjacent and parallel travel channels. | 05-23-2013 |