Patent application number | Description | Published |
20090102020 | WAFER AND METHOD FOR MANUFACTURING SAME - A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing flange and having a smaller thickness than the reinforcing flange. The reinforcing flange includes a circumferential portion formed upright along the circumference and a notch portion formed upright near the orientation notch, and a width of the circumferential portion as viewed parallel to a major surface of the wafer is smaller than a depth of the orientation notch as viewed parallel to the major surface. | 04-23-2009 |
20100048000 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements formed on the first surface. The rim portion surrounds the recess portion. The recess portion and the rim portion are composed of the first and second surfaces. The recess portion is formed so as to recede toward the first surface. A tape is adhered to the second surface of the semiconductor wafer. At least the recess portion of the semiconductor wafer is placed on a stage. The tape is sandwiched between the recess portion and the stage. Laser beam is irradiated to the recess portion from the side of the first surface and along predetermined dicing lines. The recess portion is cut off to divide the semiconductor wafer into chips. | 02-25-2010 |
20100207249 | WAFER INCLUDING A REINFORCING FLANGE FORMED UPRIGHT AT A PERIPHERY AND METHOD FOR MANUFACTURING THE SAME - A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing flange and having a smaller thickness than the reinforcing flange. The reinforcing flange includes a circumferential portion formed upright along the circumference and a notch portion formed upright near the orientation notch, and a width of the circumferential portion as viewed parallel to a major surface of the wafer is smaller than a depth of the orientation notch as viewed parallel to the major surface. | 08-19-2010 |
20110053374 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device which is capable of stably forming a plated layer on a plating base layer while adhered chippings are reduced. The method includes forming an insulating film covering at least a base metal on a diffusion region of a semiconductor substrate, forming an organic coating film having an opening at least at a surface section of the base metal being to be exposed on the insulating film, pasting a surface protection tape on the semiconductor substrate to cover the insulating film and the organic coating film, polishing a back surface of the semiconductor substrate that opposes the base metal, removing the surface protection tape, etching the insulating film with the organic coating film used as a mask to expose the base metal and forming a conductive plated layer on the base metal. | 03-03-2011 |