Patent application number | Description | Published |
20080303043 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 12-11-2008 |
20090042328 | SEMICONDUCTOR LIGHT EMITTING DEVICE - At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers. | 02-12-2009 |
20090230840 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 09-17-2009 |
20090284132 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 11-19-2009 |
20090309485 | Nitride phosphor and production process thereof, and light emitting device - To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula L | 12-17-2009 |
20100264445 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100264446 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100264447 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100266815 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20100267181 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-21-2010 |
20130183496 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 07-18-2013 |
20130257920 | DISPLAY APPARATUS AND METHOD OF CONTROLLING THE SAME - A display apparatus includes a first light source, a second light source, a third light source, a first color filter, a second color filter, a third color filter, and an opto-functional device. The first light source and the second light source are allowed to emit light in a first emission time period to form a first display pattern. The third light source is allowed to emit light and the opto-functional device controls the third color filter to transmit light in a second emission time period to form a second display pattern. The first emission time period and the second emission time period are alternately repeated to combine the first display pattern and the second display pattern to obtain an intended display pattern when the display apparatus displays the intended display pattern. | 10-03-2013 |
20140299974 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate. | 10-09-2014 |