Patent application number | Description | Published |
20090289344 | Semiconductor device - A semiconductor device includes an insulating substrate; at least one semiconductor element mounted on a first principal surface of the insulating substrate; and a heat radiator joined through a solder member to a second principal surface of the insulating substrate opposite to the first principal surface on which the semiconductor element is mounted. The solder member contains at least tin and antimony, and the antimony content of the solder member is in a range of from 7% by weight to 15% by weight, both inclusively. Thus, reliability of the semiconductor device is improved. | 11-26-2009 |
20130267064 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element. | 10-10-2013 |
20140043765 | SEMICONDUCTOR MODULE COOLER AND SEMICONDUCTOR MODULE - A semiconductor module cooler supplies a coolant to a water jacket from outside and cools a semiconductor device arranged on an outer surface of the cooler. The semiconductor module cooler has a heat sink thermally connected to the semiconductor device; a first flow channel arranged inside the water jacket with a guide section extending from a coolant inlet and having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel arranged inside the water jacket in parallel to the first flow channel and extending to a coolant outlet; and a third flow channel formed inside the water jacket at a position connecting the first flow channel and the second flow channel. The coolant inlet and the coolant outlet are formed on a same wall surface of the water jacket, and the heat sink is arranged in the third flow channel. | 02-13-2014 |
20140239486 | COOLING DEVICE FOR SEMICONDUCTOR MODULE, AND SEMICONDUCTOR MODULE - A cooling device for a semiconductor module supplying a coolant from outside into a water jacket and cooling a semiconductor element, includes a heat sink thermally connected to the semiconductor element; a first flow channel extending from a coolant introducing port and including a guide section having an inclined surface for guiding the coolant toward one side surface of the heat sink; a second flow channel disposed parallel to the first flow channel and extending toward a coolant discharge port; a flow velocity adjusting plate disposed in the second flow channel and formed parallel to the other side surface of the heat sink at a distance therefrom; and a third flow channel formed to communicate the first flow channel and the second flow channel. The heat sink is disposed in the third flow channel. | 08-28-2014 |
20140252590 | SEMICONDUCTOR MODULE COOLER AND SEMICONDUCTOR MODULE - A semiconductor module cooler for supplying a refrigerant from exterior into a water jacket and cooling a semiconductor device disposed on an outer surface of the cooler, includes a heat sink thermally connected to the semiconductor device; a first flow path extending from a refrigerant inlet and arranged with a guide portion having an inclined surface for guiding the refrigerant toward one side surface of the heat sink; a second flow path extending toward a refrigerant outlet and formed with a sidewall parallel to the other side surface of the heat sink; a flow velocity adjustment plate disposed in the second flow path and formed parallel to the other side surface of the heat sink at a distance therefrom; and a third flow path formed at a position communicating the first flow path and the second flow path. The heat sink is disposed in the third flow path. | 09-11-2014 |
Patent application number | Description | Published |
20090093109 | Method for producing a semiconductor device using a solder alloy - In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate. | 04-09-2009 |
20090130800 | Manufacturing method of semiconductor device - A method of manufacturing a semiconductor device includes the steps of bonding a semiconductor chip to a first side of a circuit board, bonding a metal base for dissipating heat produced by the semiconductor chip to a second side of the circuit board, and forming a dam on the metal base by a dam material so as to restrict flow of a solder used in bonding a plurality of the circuit boards to the metal base. | 05-21-2009 |
20140080262 | METHOD FOR PRODUCING THE SAME - A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base. | 03-20-2014 |
Patent application number | Description | Published |
20110011508 | PNEUMATIC TIRE - A tire includes a rim protector ( | 01-20-2011 |
20110308676 | PNEUMATIC TIRE - A pneumatic tire comprises a tread portion provided with an asymmetrical tread pattern comprising a pair of crown circumferential grooves defining a crown rib therebetween. The crown rib is provided with: a central narrow circumferential groove subdividing the crown rib into a crown-rib outside portion and a crown-rib inside portion; cooling slots extending from the crown circumferential grooves; and cooling holes. | 12-22-2011 |
20130192730 | PNEUMATIC TIRE AND METHOD OF MANUFACTURING THE SAME - In a pneumatic tire in which axial grooves are arranged on an outer surface of a tread portion so as to be spaced apart from each other in a tire circumferential direction, a rib-forming region including at least one inward rib which projects from an inner surface of the tread portion inwardly in a tire radial direction and extends in a direction intersecting the axial grooves and across axial groove-inward regions inward of the axial grooves in the tire radial direction is provided in the inner surface of the tread portion. | 08-01-2013 |
20140137998 | PNEUMATIC TIRE - A pneumatic tire comprises an asymmetric tread pattern with a designated install direction to a vehicle having an outboard tread edges, the tread pattern having an outboard tread portion between the outboard tread edge and a tire equator and provided with an outer main groove, the outer main groove having a cross section comprising a bottom with a depth of 5.5 to 6.5 mm, and axially inner and outer groove walls each extending from the bottom to a tread contact surface, respectively, at least one of groove walls having a stepwise shape comprising a radially inner portion extending from the bottom with a height of 2.0 to 4.0 mm, an axially extending stepped portion extending from the radially inner portion with a length of 0.75 to 1.25 mm, and a radially outer portion between the stepped portion and the tread contact surface. | 05-22-2014 |
Patent application number | Description | Published |
20090022968 | DECORATIVE SHEET, FORMED PRODUCT AND VEHICLE - A decorative sheet is designed for use to decorate a formed product. The sheet includes a decoration layer, a base member that supports the decoration layer, and an adhesive layer arranged to adhere the decoration layer and the base member onto the body of the formed product. The adhesive layer includes a first adhesive layer and a second adhesive layer, which is arranged between the first adhesive layer and the base member and which has a melting point that is higher than that of the first adhesive layer by about 18° C. to about 40° C. | 01-22-2009 |
20090136691 | DECORATIVE SHEET, DECORATED MOLDED ARTICLE, AND MOTOR VEHICLE - A decorative sheet that can decorate a formed product without diminishing the beauty of its appearance is used to decorate the surface of a formed product. The sheet includes a decoration layer; a base member that supports the decoration layer; an adhesive layer for adhering the decoration layer and the base member onto the formed product; and a flow reducing member for reducing the flow of the adhesive layer. The flow reducing member is provided in the adhesive layer and is made of a material having a higher melting point than that of a material of the adhesive layer. | 05-28-2009 |
20090165946 | DECORATIVE SHEET, DECORATED FORMED PRODUCT, METHOD OF MAKING THE DECORATIVE SHEET AND METHOD OF MAKING THE DECORATED FORMED PRODUCT - A decorative sheet includes a decoration layer having air permeability and an adhesive layer on the decoration layer arranged to bond the decoration layer onto an object. The decoration layer has an adhesive permeated portion permeated with the adhesive that has diffused from the adhesive layer. The adhesive permeated portion is about one-fifth to about one-third as thick as the decoration layer. | 07-02-2009 |
20130239556 | PRODUCTION METHOD FOR EXHAUST GAS-PURIFYING CATALYST AND MOTOR VEHICLE - A method for producing an exhaust gas purifying catalyst according to the present invention includes step (a) of preparing a metal oxide support containing zirconium; step (b) of preparing a solution containing rhodium; and step (c) of adding the metal oxide support prepared in the step (a), and ammonium carbonate, ammonium hydrogencarbonate or ammonia water, to the solution prepared in the step (b) to obtain the solution having a pH adjusted to a range of 3.0 or higher and 7.5 or lower. The present invention provides a method capable of producing an exhaust gas purifying catalyst including a metal oxide support containing zirconium and rhodium of a minute particle size which is supported on the metal oxide support at a high degree of dispersion. | 09-19-2013 |
Patent application number | Description | Published |
20100109182 | METHOD OF SETTING MOLD CLAMPING FORCE OF INJECTION MOLDING MACHINE - When test molding is performed by sequentially clamping a mold with a mold clamping force (100%, 80%, 70%, ...) obtained by sequentially lowering a mold clamping force by a predetermined amount from the maximum mold clamping force (100%), a mold clamping pressure Pc in an injection process is detected and a plurality of different monitored elements (Pc, Pcd and Per) corresponding to the variation of the mold clamping pressure Pc are monitored, and thus it is detected that at least one of the monitored elements is varied to exceed a predetermined threshold, a mold clamping force obtained by increasing a mold clamping force at the time of the production of the variation by a predetermined amount is set as a proper mold clamping force Fs. | 05-06-2010 |
20100109183 | METHOD OF SETTING MOLD CLAMPING FORCE OF INJECTION MOLDING MACHINE - Test molding is performed by sequentially clamping a mold | 05-06-2010 |
20110018157 | METHOD OF ADJUSTING MOLD THICKNESS OF TOGGLE-TYPE MOLD CLAMPING DEVICE - There are provided a first process T | 01-27-2011 |
20130100032 | DISPLAY DEVICE FOR PRODUCTION MACHINE - A display device with a touch panel and a controller having a computer function to display various kinds of screens on a display surface of the display. The controller includes a multiple screen display processing function part wherein at least two independent screen display parts are displayed side by side, a screen switch processing function part to enable switching of a touched screen to the other screen by a touch/slide operation on the screen, and a switch key display processing function part by which a key display part is arranged on the display surface in an area other than the screen display parts. A plurality of switch keys are arranged and displayed in the key display part according to a key pattern corresponding to the order of the screens switched by a touch/slide operation so as to enable selection of the screens to display by a touch operation. | 04-25-2013 |
Patent application number | Description | Published |
20090015918 | DISPLAY DEVICE, DISPLAY CONTROLLING METHOD, AND PROGRAM - A display device which is capable of generating more parallaxes without reducing resolution and an image quality, a display controlling method, and a program are provided. An aperture ratio of a light source is set as 1/N, and liquid lenses are disposed at distances of focal lengths of the first liquid lens and the second liquid lens from the light source, respectively. A position controlling portion changes a position of a nonpolar liquid by a size of each of luminescent pixels as represented by the first liquid lens and the second liquid lens, which results in that emitted lights from respective luminescent pixels pass through either the first liquid lens or the second liquid lens to be emitted in directions different from one another as shown in the form of lights. The present embodiments can be applied to a parallax image displaying device. | 01-15-2009 |
20110164322 | ANTIREFLECTIVE FILM, METHOD OF PRODUCTION THEREOF, AND UV-CURABLE RESIN MATERIAL COMPOSITION COATING LIQUID - A UV-curable resin material composition coating liquid is provided and includes a UV-curable resin material composition dissolved or dispersed in a nonpolar solvent or a substantially nonpolar mixed solvent. The UV-curable resin material composition includes a monomer and/or an oligomer thereof that have two or more (meth)acryloyl groups, and affinity to a nonpolar solvent, modified hollow silica fine particles altered to have affinity to a nonpolar solvent by introduction of an aliphatic hydrocarbon group to surfaces of hollow silica fine particles, and a polymerization initiator. | 07-07-2011 |
20130136936 | GAS BARRIER BASE MATERIAL AND GAS BARRIER LAMINATE - A gas barrier base material includes a base material, a resin layer disposed on at least one principal surface of the base material, and an inorganic oxide layer which is disposed on one principal surface of the resin layer and which contains an inorganic oxide, wherein the resin layer is produced by curing a resin composition containing a polymerizable compound having a cycloalkane structure or a polymerizable compound having a high-acid value phthalic acid structure. | 05-30-2013 |
Patent application number | Description | Published |
20100203741 | SEMICONDUCTOR MANUFACTURING SYSTEM - Disclosed is a technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. The type and/or position of the nozzle for supplying ozone, as a precoat gas, into the reaction tube during the precoating process is different from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during forming of a film on a semiconductor substrate. | 08-12-2010 |
20110303152 | SUPPORT STRUCTURE, PROCESSING CONTAINER STRUCTURE AND PROCESSING APPARATUS - A support structure for supporting a plurality of objects to be processed and to be disposed in a processing container structure in which a processing gas flows horizontally from one side to the opposite side, includes a top plate section; a bottom section; and a plurality of support posts connecting the top plate section and the bottom section, wherein a plurality of support portions for supporting the objects to be processed are formed in each support post at a predetermined pitch along the longitudinal direction, and the distance between the topmost support portion of the support portions of each support post and the top plate section as well as the distance between the lowermost support portion of the support portions of each support post and the bottom section are set not more than the pitch of the support portions. The support structure can prevent the occurrence of a turbulent gas flow in the top and bottom areas of the processing container structure. | 12-15-2011 |
20110312188 | PROCESSING APPARATUS AND FILM FORMING METHOD - A processing apparatus for processing objects, includes: a processing container structure having a bottom opening and including a processing container having a processing space for housing the objects, the container having a nozzle housing area on one side of the processing space and a slit-like exhaust port on the opposite side of the processing space from the nozzle housing area; a lid for closing the bottom opening of the processing container structure; a support structure for supporting the objects and which can be inserted into and withdrawn from the processing container structure; a gas introduction means including a gas nozzle housed in the nozzle housing area; an exhaust means including a plurality of exhaust systems for exhausting the atmosphere in the processing container structure; a heating means for heating the objects; and a control means for controlling the gas introduction means, the exhaust means and the heating means. | 12-22-2011 |
Patent application number | Description | Published |
20110300719 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - When an object to be processed is transferred into a process chamber capable of keeping a vacuum and an interior of the process chamber is kept in a vacuum state, the film formation method includes performing forming a first ZrO film on the object to be processed by supplying a zirconium material and an oxidizing agent in the order listed above into the process chamber and forming a second ZrO film doped with Si on the object to be processed by supplying the zirconium material, a silicon material, and the oxidizing agent in the order listed above into the process chamber, in such a way that a number of times the forming the first ZrO film is performed and a number of times the forming the second ZrO film is performed are adjusted, respectively, to form a zirconia-based film having a predetermined film thickness while controlling a Si concentration in the film. | 12-08-2011 |
20120067846 | Liquid Processing Method, Recording Medium Having Recorded Program for Executing Liquid Processing Method Therein and Liquid Processing Apparatus - Disclosed is a method for processing a substrate including a first process and a second process. The first process comprises supporting the substrate formed with a titanium-containing film on its front surface and rear surface by a support unit which is rotatably installed; rotating the substrate along with the support unit; and supplying a first processing liquid containing hydrofluoric acid to the rear surface of the substrate thereby processing the rear surface of the substrate with the first processing liquid. The second process comprises supplying a second processing liquid containing ammonia hydrogen peroxide mixture to the rear surface of the substrate after the first process is completed, thereby processing the rear surface of the substrate with the second processing liquid. | 03-22-2012 |
20120077322 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD - To provide a dielectric film having good crystallinity while suppressing an influence of the size effects and preventing the dielectric film from being divided by an Al-doped layer although there is provided the Al-doped layer for improving the leakage characteristics in the dielectric film of a capacitor, the dielectric film has at least one Al-doped layer, and an area density of Al atoms in one layer of the Al-doped layer is smaller than 1.4E+14′ atoms/cm | 03-29-2012 |
20120199067 | FILM-FORMING APPARATUS - An atmosphere in a reaction pipe is replaced by supplying a purge gas into the reaction pipe from a slit of a third gas injector when process gases are switched, by providing the third gas injector including the slit along a length direction of the reaction pipe in addition to first and second gas injectors including gas ejection holes for respectively supplying process gases, such as s Zr-based gas and an O | 08-09-2012 |
20120219710 | METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM - According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material. | 08-30-2012 |
20120244721 | FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM - A method of forming a dielectric film including a zirconium oxide film includes: forming a zirconium oxide film on a substrate to be processed by supplying a zirconium material and an oxidant, the zirconium material including a Zr compound which includes a cyclopentadienyl ring in a structure, and forming a titanium oxide film on the zirconium oxide film by supplying a titanium material and an oxidant, the titanium material including a Ti compound which includes a cyclopentadienyl ring in a structure. | 09-27-2012 |
20120309163 | METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE - The invention provides a method of forming a titanium oxide film having a rutile crystalline structure that has high permittivity. The titanium oxide film having a rutile crystalline structure is produced by forming an amorphous titanium oxide film on an amorphous zirconium oxide film using methyl cyclopentadienyl tris(dimethylamino)titanium as a titanium precursor by an ALD method, and crystallizing the amorphous titanium oxide film by annealing at a temperature of 300° C. or higher. | 12-06-2012 |
20130037873 | FILM FORMING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, FILM FORMING APPARATUS, AND SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode. | 02-14-2013 |
20130109197 | METHOD OF FORMING SILICON OXIDE FILM | 05-02-2013 |
20130292700 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO | 11-07-2013 |
20140367699 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO | 12-18-2014 |
Patent application number | Description | Published |
20140094027 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Provided is a method of forming a gate insulating film for use in a MOSFET for a power device. An AlN film is formed on a SiC substrate of a wafer W and then the formation of an AlO film and the formation of an AlN film on the formed AlO film are repeated, thereby forming an AlON film having a laminated structure in which AlO films and AlN films are alternately laminated. A heat treatment is performed on the AlON film having the laminated structure. | 04-03-2014 |
20140199853 | METHOD OF FORMING SILICON OXIDE FILM - A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and forming a silicon oxide film on the base by oxidizing the silicon film. Between the forming a silicon film and the forming a silicon oxide film, exposing the object to be processed having the silicon film formed thereon to an atmosphere containing at least an oxidizing component is performed. | 07-17-2014 |
20140213067 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more. | 07-31-2014 |