Patent application number | Description | Published |
20120057815 | OPTICAL MODULATION DEVICE - An optical modulation device of an embodiment includes: a first p-type semiconductor region; a first n-type semiconductor region; a first low-impurity-density semiconductor region formed between the first p-type semiconductor region and the first n-type semiconductor region; a second n-type semiconductor region formed on an outer side of the first p-type semiconductor region via a second low-impurity-density semiconductor region; and a second p-type semiconductor region formed on an outer side of the first n-type semiconductor region via a third low-impurity-density semiconductor region. The carrier density in the first low-impurity-density semiconductor region is changed by current injection. The phase of light propagated through an optical waveguide structure that includes at least part of the first low-impurity-density semiconductor region is modulated. | 03-08-2012 |
20130251300 | ATHERMAL RING OPTICAL MODULATOR - An athermal ring optical modulator includes a first clad layer, a ring optical resonator, a second clad layer, an input-output optical waveguide, a first conduction type region, and a second conduction type region. The ring optical resonator has a rib optical waveguide with a convex portion formed on a semiconductor slab layer. The semiconductor slab layer is formed on the first clad layer. The second clad layer covers an upper side of the rib optical waveguide. The input-output optical waveguide couples optically with the ring optical resonator. The first and second conduction type regions are formed in the semiconductor slab layer inside and outside the ring optical resonator, respectively. In addition, the second clad layer includes a material having a negative thermo-optical coefficient. The semiconductor slab layer outside the convex portion is thinner than the semiconductor slab layer inside the convex portion. | 09-26-2013 |
20130259420 | OPTICAL TRANSMISSION-RECEPTION SYSTEM AND LIGHT-RECEIVING UNIT - An optical transmission-reception system includes: a light-emitting element having a first semiconductor multilayer structure with a ring- or disk-like shape and generating a first optical signal and a second optical signal rotating in a direction opposite to the first optical signal; a first optical waveguide optically coupled with the light-emitting element and propagating the first optical signal; a second optical waveguide optically coupled with the light-emitting element and propagating the second optical signal; and a light-receiving element having a second semiconductor multilayer structure with a ring- or disk-like shape, optically coupled with the first and second optical waveguides, and optically receiving the first and second optical signals. The first optical waveguide has a spiral shape at a coupling part with the light-receiving element, and the second optical waveguide has a spiral shape winding in the same direction as the first optical waveguide at a coupling part with the light-receiving element. | 10-03-2013 |
20140044391 | OPTICAL INTERCONNECTION DEVICE AND METHOD OF MANUFACTURING THE SAME - An optical interconnection device includes a light-emitting element, a light-receiving element, and an optical waveguide. Both the light-emitting element and the light-receiving element have a layered structure and are formed on a silicon substrate. At least a portion of the light-emitting element is embedded in an insulator. At least a portion of the light-receiving element is embedded in the insulator. The optical waveguide is formed over the insulator, and is optically coupled to the light-emitting element and the light-receiving element by distributed coupling. | 02-13-2014 |
20140048818 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp02-20-2014 | |
20140185641 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode. | 07-03-2014 |
20140212088 | OPTICAL DEVICE AND MANUFACTURING METHOD THEREOF - An optical device according to an embodiment includes a laser light source, a first optical waveguide that propagates light being output from the laser light source, a first distribution device that distribute the light into n lights, n second optical waveguides that propagates the n lights being output from the first distribution device, n second distribution devices that distribute each of the n lights into m lights, n×m third optical waveguides arranged in a matrix form and propagates the n×m lights being output from the m second distribution devices, a control electrode that apply a voltage or current to each of the third optical waveguides, and control phase of the light propagating through the third optical waveguides, and an output end surface that output the n×m lights. | 07-31-2014 |
20150034968 | PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION SYSTEM, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1≦p≦n and 2≦n) of 1.59≦Ap≦3.26 and a full width at half maximum Fp (eV) (where 1≦p≦n and 2≦n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1≦q≦m and 2≦m≦n), and the m photoelectric conversion layers each satisfy the relationship of Ap−Fp02-05-2015 | |