Patent application number | Description | Published |
20090023625 | Detergent composition containing suds boosting co-surfactant and suds stabilizing surface active polymer - A detergent composition having improved sudsing profile comprising 0.2% to 6% by weight of a suds boosting co-surfactant having the formula R—O—(CH | 01-22-2009 |
20090143269 | Detergent Composition - A detergent composition comprising:
| 06-04-2009 |
20090305937 | Detergent Composition - A detergent composition comprising:
| 12-10-2009 |
20090305939 | Detergent Composition - A detergent composition comprising at most 15% by weight of phosphate builder(s) and aluminosilicate builder(s), and comprising at least one short chain anionic surfactant selected from alkyl sulfate surfactant(s) and alkyl sulfonate surfactants. | 12-10-2009 |
20100170045 | Laundry Detergent Containing Suds Collapser - An alkaline laundry detergent for hand washing a fabric contains a sudsing surfactant, a polyethyleneimine suds collapser having the empirical formula (PEI) | 07-08-2010 |
20110021402 | Detergent Composition - A solid detergent composition having the salt of an anionic surfactant and of a monopropanolamine counterion. | 01-27-2011 |
20110081388 | Detergent Composition - A detergent composition having from 1% to 50% by weight of anionic surfactant and from 0.1% to 30% by weight of sudsing particles. The sudsing particles have: an average per number length of from 50 nm to 50 μm, an average per number width of from 1 nm to 500 nm, an average per number ratio length/width from 1.5 to 1000, and an hydrophobicity measured by contact angle in the range of from 30° to 100°. The weight ratio of the total amount of anionic surfactant to the total amount of sudsing particles is from 0.05 to 20. | 04-07-2011 |
20110229420 | Cleaning Composition Containing Substituted Starch - A cleaning composition having from 0.05% to 30% by weight of surfactant and from 0.01% to 10% by weight of substituted starch, wherein the substituted starch has:
| 09-22-2011 |
20140023609 | CLEANING COMPOSITIONS - The present invention relates to cleaning composition, preferably a laundry detergent composition, comprising a foam control composition comprising a hydrophobically modified cationic polymer, as well as processes for making and method of using such compositions. The composition of the present invention provides for enhanced suds removal during the rinse cycle with minimal or nil impact on suds volume during the wash cycle. | 01-23-2014 |
20140024571 | Granulated Foam Control Composition - A granulated foam control composition comprises a foam control agent based on a polydiorganosiloxane fluid, an organic additive of melting point 45″1 | 01-23-2014 |
20140352076 | LAUNDRY DETERGENTS - A laundry detergent having a granulated foam control composition and an anionic surfactant, wherein said granulated foam control composition has a foam control agent having a polydiorganosiloxane fluid, hydrophobic filler, and the granulated foam control composition also has an organic additive composition, a water soluble particulate carrier and a charged cationic polymer. A method of cleaning a fabric, a method of conserving water when washing fabric and a method of saving time through when washing fabric. | 12-04-2014 |
20150191676 | LIQUID LAUNDRY DETERGENTS WITH IMPROVED SUDS PROFILE - The present invention relates to a liquid laundry detergent composition containing an alkylethoxy sulfate (AES) surfactant in combination with two or more fatty acids characterized by a specific Fatty Acids Distribution Profile for achieving improved suds profile. | 07-09-2015 |
Patent application number | Description | Published |
20090294846 | TRENCH-TYPE POWER MOS TRANSISTOR AND INTEGRATED CIRCUIT UTILIZING THE SAME - A power MOS transistor comprises a drain region, a trench gate, a source region, a well region, a deep well region and a substrate region. The drain region has a doping region of a first conductivity type connected to a drain electrode. The trench gate has an insulating layer and extends into the drain region. The source region has a doping region of the first conductivity type connected to a source electrode. The well region is doped with a second conductivity type, formed under the source region, and connected to the source electrode. The deep well region is doped with the first conductivity type and is formed under the drain region and the well region. The substrate region is doped with the second conductivity type and is formed under the deep well region. The drain region is formed at one side of the trench gate and the source region is formed at the opposing side of the trench gate such that the trench gate laterally connects the source region and the drain region. | 12-03-2009 |
20100276751 | INTEGRATED CIRCUIT UTILIZING TRENCH-TYPE POWER MOS TRANSISTOR - An integrated circuit includes a power MOS transistor which comprises a drain region, a trench gate, a source region, a well region, a deep well region and a substrate region. The drain region has a doping region of a first conductivity type connected to a drain electrode. The trench gate has an insulating layer and extends into the drain region. The source region has a doping region of the first conductivity type connected to a source electrode. The well region is doped with a second conductivity type, formed under the source region, and connected to the source electrode. The deep well region is doped with the first conductivity type and is formed under the drain region and the well region. The substrate region is doped with the second conductivity type and is formed under the deep well region. The drain region is formed at one side of the trench gate and the source region is formed at the opposing side of the trench gate such that the trench gate laterally connects the source region and the drain region. | 11-04-2010 |
20110163374 | TRENCH-TYPED POWER MOS TRANSISTOR AND METHOD FOR MAKING THE SAME - A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isolation layer is formed between the gate conductor and a double diffusion region. A thick bottom region of the isolation layer is formed between the gate conductor and a deep well region. | 07-07-2011 |
20110163378 | LAYOUT STRUCTURE OF POWER MOS TRANSISTOR - The present invention discloses a layout structure of a transistor unit of a power MOS transistor, wherein the layout structure comprises a drain area, a plurality of body areas, a plurality of source areas and a gate area. The plurality of body areas surround the drain area. The plurality of source areas extend from the perimeters of the plurality of body areas in an anisotropic manner. The gate area is disposed between the drain area and the plurality of source areas. The contacts of the drain area, the plurality of body areas and the plurality of source areas are all disposed on the same side of the layout structure. | 07-07-2011 |
20120100683 | TRENCH-TYPED POWER MOS TRANSISTOR AND METHOD FOR MAKING THE SAME - A trench-typed power MOS transistor comprises a trench-typed gate area, which includes a gate conductor and an isolation layer. A thin sidewall region of the isolation layer is formed between the gate conductor and a well region. A thick sidewall region of the isolation layer is formed between the gate conductor and a double diffusion region. A thick bottom region of the isolation layer is formed between the gate conductor and a deep well region. | 04-26-2012 |
20140197475 | POWER MOSFET DEVICE WITH A GATE CONDUCTOR SURROUNDING SOURCE AND DRAIN PILLARS - A power MOSFET device includes at least one MOSFET unit disposed over a substrate, wherein the MOSFET unit includes a plurality of cells and a boundary surrounding the cells. In one embodiment of the present invention, the cell is configured to provide a unit current, and comprises at least one source pillar and at least one drain pillar, a gate conductor surrounding the source pillar and the drain pillar, and an insulating structure electrically separating the gate conductor from the source pillar and the drain pillar, wherein the gate conductor extends from the cell to the boundary. | 07-17-2014 |
Patent application number | Description | Published |
20120167158 | SCOPED RESOURCE AUTHORIZATION POLICIES - Resource authorization policies and resource scopes may be defined separately, thereby decoupling a set of authorization rules from the scope of resources to which those rules apply. In one example, a resource includes anything that can be used in a computing environment (e.g., a file, a device, etc.). A scope describes a set of resources (e.g., all files in folder X, all files labeled “Y”, etc.). Policies describe what can be done with a resource (e.g., “read-only,” “read/write,” “delete, if requestor is a member of the admin group,” etc.). When scopes and policies have been defined, they may be linked, thereby indicating that the policy applies to any resource within the scope. When a request for the resource is made, the request is evaluated against all policies associated with scopes that contain the resource. If the conditions specified in the policies apply, then the request may be granted. | 06-28-2012 |
20120297455 | TARGET-BASED ACCESS CHECK INDEPENDENT OF ACCESS REQUEST - A context of a principal is built, at a target system controlling access to a resource, independently of the principal requesting access to the resource. An authorization policy is applied, at the target system, to the context to determine whether the principal is permitted to access the resource, and an indication of whether the principal is permitted to access the resource is provided (e.g., to an administrator). Modifications can be made to the context and the authorization re-applied to determine whether a principal having the modified context is permitted to access the resource. | 11-22-2012 |