Patent application number | Description | Published |
20080244220 | Filter and Method For Filtering - A filter and method of filtering modifies the computation order to accommodate horizontal symmetric filtering, and modifies the source operands while modifying the SIMD computation, so as to eliminate such heavy overhead of transposing a pixel matrix. The filter and method of filtering reformats the equations involved in the prior art to the following equations, thereby acquiring the interpolation results by reducing the required clock cycles to three cycles: | 10-02-2008 |
20090089507 | OVERLAY INSTRUCTION ACCESSING UNIT AND OVERLAY INSTRUCTION ACCESSING METHOD - The present invention provides an overlay instruction accessing unit and method, and a method and apparatus for compressing and storing a program. The overlay instruction accessing unit is used to execute a program stored in a memory in the form of a plurality of compressed program segments, and compresses: a buffer; a processing unit for issuing an instruction reading request, reading an instruction from the buffer, and executing the instruction; and a decompressing unit for reading a requested compressed instruction segment from the memory in response to the instruction reading request of the processing unit, decompressing the compressed instruction segment, and storing the decompressed instruction segment in the buffer, wherein while the processing unit is executing the instruction segment, the decompressing unit reads, according to a storage address of a compressed program segment to be invoked in a header corresponding to the instruction segment, a corresponding compressed instruction segment from the memory, decompresses the compressed instruction segment, and stores the decompressed instruction segment in the buffer for later use by the processing unit. | 04-02-2009 |
20110166284 | SILICONE FREE DEFOAMER FOR SOLVENT BASED COATINGS - The invention relates to a silicone free defoamer for solvent based coatings, especially clear wood coatings preferably based on a graft copolymer of poly alkyl vinyl ether. The coating composition is comprising a resin binder component, and a defoamer formulation comprising a) a graft copolymer of the Formula (I) wherein A are polymerizable monomers or comonomers selected from alkyl vinyl ether, phenyl vinyl ether, allyl ether, acrylate, methacrylate, olefin, maleic anhydride or styrene; [A] | 07-07-2011 |
20130334469 | AL-SB-TE PHASE CHANGE MATERIAL USED FOR PHASE CHANGE MEMORY AND FABRICATION METHOD THEREOF - The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Al | 12-19-2013 |
20140192592 | SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIAL - The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula Sb | 07-10-2014 |
20140341124 | METHODS AND NODES FOR IMPROVED NETWORK SIGNALING - The disclosure relates to methods and nodes for reducing the signaling load in a communications network. One claim of the disclosure relates to a method in a first network node for handling of service requests. The method comprises the steps of: generating a service request message, transmitting the service request message to a second network node, establishing a radio access bearer, RAB, to the second network node, and transmitting uplink data via said RAB to the second network node. | 11-20-2014 |
20150207070 | Antimony-Rich High-speed Phase-change Material Used In Phase-Change Memory, Preparing Method, And Application Thereof - The present invention relates to a metal element doped phase-change material in the field of micro-electronics technologies, specifically to an antimony-rich high-speed phase-change material used in a phase-change memory (PCRAM), a preparing method and an application thereof. The antimony-rich high-speed phase-change material used in a PCRAM has a chemical formula being A | 07-23-2015 |
20160099050 | SB-TE-TI PHASE-CHANGE MEMORY MATERIAL AND TI-SB2TE3 PHASE-CHANGE MEMORY MATERIAL - An Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula Sb | 04-07-2016 |