Patent application number | Description | Published |
20080302297 | Method of recovering sodium metal from flux - It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux | 12-11-2008 |
20090095212 | Method for manufacturing single crystal of nitride - A seed crystal | 04-16-2009 |
20100012020 | METHOD FOR MANUFACTURING NITRIDE SINGLE CRYSTAL - A nitride single crystal is produced on a seed crystal substrate | 01-21-2010 |
20110049570 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE - Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In | 03-03-2011 |
20110049571 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE - Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of In | 03-03-2011 |
20110062493 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STRUCTURE, AND LEAKAGE CURRENT SUPPRESSION METHOD FOR SCHOTTKY JUNCTION STRUCTURE - Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of In | 03-17-2011 |
20140352646 | Heat-Insulating Member and Structure of Combustion Chamber for Engine - There are provided a heat-insulating member which enhances a thermal efficiency of an engine to enhance fuel efficiency, and a structure of a combustion chamber for the engine. A heat-insulating member | 12-04-2014 |
20150040879 | STRUCTURE OF COMBUSTION CHAMBER FOR ENGINE AND INNER WALL STRUCTURE OF FLOW PATH - There is provided a structure of a combustion chamber for an engine which enhances a thermal efficiency of the engine to enhance a fuel efficiency, and an inner wall structure of a flow path through which an intake gas or an exhaust gas of the engine flows. The structure of the combustion chamber for the engine includes a heat-insulating member | 02-12-2015 |