Mieczkowski
Andrew Mieczkowski, Meriden, CT US
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20100043896 | DUPLEX VALVE - A leak detection system for detecting a leak within a duplex valve assembly is disclosed. The duplex valve assembly includes a first valve, a second valve and an intermediate fluid flow passageway fluidly interconnecting the first valve to the second valve. The leak detection system includes a means for indicating whether the first valve is maintained in a closed position or an open position, a means for indicating whether the second valve is maintained in a closed position or an open position, and a pressure change detector within the intermediate fluid flow passageway. The pressure change sensing means is at least partially positioned within the intermediate fluid flow passageway for detecting a pressure change within the intermediate fluid flow passageway. | 02-25-2010 |
Andrew Mieczkowski, Schererville, IN US
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20140278184 | Zero Deadband Processing for Velocity Transmitters - Systems, apparatuses and methods are disclosure for adjusting and/or modifying outputs of sensors based on deadband effects, where sensor adjustments may be based on a value, which may be a constant, such as an error value for the sensor, or a dynamic value. Differential pressure values measured from the output of sensors are compared to the value, and, in response to the comparison, the output of the sensor may be set substantially to zero if the measured differential pressure value is less than the value. Otherwise, the measured differential pressure values are passed through if they are is equal to or greater than the value. Additional techniques employing zero offsets, span adjustment and error scale adjustments are further disclosed. | 09-18-2014 |
Carl Mieczkowski, Fremont, CA US
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20120076800 | Non-Aqueous High Concentration Reduced Viscosity Suspension Formulations of Antibodies - The present invention relates to non-aqueous high concentration reduced viscosity suspension formulations of antibodies and methods of making and using them. | 03-29-2012 |
Chad Mieczkowski, Avon, OH US
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20150020512 | TORQUE CONVERTER WITH TURBINE MASS ABSORBER - A piston plate assembly for a torque converter comprising: an aperture including a chamfer portion; and, a bushing installed in the aperture and including a radius portion proximate the chamfer portion, wherein the bushing is arranged to seal the piston directly to a transmission input shaft and the radius portion is arranged to ease assembly of the bushing onto the input shaft. | 01-22-2015 |
Chad Mieczkowski, Pittsburgh, PA US
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20110247322 | Torque Converter with Turbine Mass Absorber - A damper assembly for a torque converter includes a drive side elastic element arranged for transmitting torque to a turbine for the torque converter in a first direction and a coast side elastic element, separate from the drive side elastic element, arranged for transmitting torque to the turbine in a second direction opposite the first direction. In an example embodiment, a slope of a torque curve for the damper remains constant in a transition region between transmitting torque to the turbine in the first direction and transmitting torque to the turbine in the second direction. In an example embodiment, the damper assembly includes an input damper and an output damper. The elastic elements are disposed in a torque path between the input damper and the output damper. In an example embodiment, the input damper is selectively engaged with a cover for the torque converter and the output damper is drivingly engaged with an output hub for the torque converter. | 10-13-2011 |
20110315498 | TORQUE CONVERTER WITH IMPROVED TORQUE CONVERTER CLUTCH PERFORMANCE - A torque converter, including: a cover; a first through bore for receiving a transmission input shaft; a clutch including a piston plate; a plurality of fasteners connected to the cover; and a plate connected to the cover. The plate includes a radially aligned wall including a plurality of openings in which the plurality of fasteners is disposed; a second through bore at least partially aligned, in an axial direction, with the first through bore; and a plurality fins extending from the radially aligned wall in the axial direction. Each fin includes a first end aligned with the first and second through bores in the axial direction. Each fin includes a second end disposed radially within the plurality of openings. A space, aligned with an axis of rotation for the torque converter and the second through bore, is formed between the respective first ends. | 12-29-2011 |
Kenneth Mieczkowski, Sweet Valley, PA US
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20080202487 | CROSSBOW DRY FIRE ARRESTOR AND CROSSBOW IMPACT COMPENSATOR - Disclosed in a dry fire arrestor for a crossbow having a trigger mechanism operable to fire an arrow or bolt, that includes a spring plate, trigger sear connected to the trigger mechanism, an anti-dry fire bar for engaging and disengaging the trigger sear. The dry fire arrestor utilizes tension provided by the spring plate to allows anti dry fire bar to automatically engage the trigger sear, precluding movement of the trigger when an arrow in not properly inserted in the dry fire arrestor. | 08-28-2008 |
20120060808 | CROSSBOW TRIGGER ASSEMBLY - A crossbow trigger mechanism operable to fire an arrow or bolt. The trigger mechanism includes a trigger operatively connected to a pair of jaws for holding a tensioned crossbow string when the jaws are in a closed position. An arrow or bolt is insertable between the upper and lower jaws. | 03-15-2012 |
20120204469 | FISHING ROD SUPPORT SYSTEM - A novel fishing rod support system including a fishing rod holder for supporting a fishing rod, an adaptor for suspending a fishing rod in the air and a stand capable of supporting holder on top of a surface. The invention is further directed to a method for using the fishing rod support system and displaying fishing rod holders. | 08-16-2012 |
Kevin Mieczkowski, Goshen, KY US
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20120264198 | In-Situ Reclaimable Anaerobic Composter - An in-situ dry anaerobic composter containing 40% to 75% by weight solids and located in a section of ground including a pit having side walls and a bottom, an essentially impervious liner located in the pit such that the liner abuts the pit side walls and bottom to form a lined pit, a compostable material located in the lined pit and a gas management system for extracting a gaseous anaerobic decomposition product from the compostable material as well as methods for operating the anaerobic composter. | 10-18-2012 |
Kevin M. Mieczkowski, Goshen, KY US
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20090269140 | Multi-Planar Gas Recovery Bioreactor - A bioreactor including one or more features that improve bioreactor liquid infiltration and gas recovery including a porous material layer having a layer of first porous material including a trench, a second porous material located in the trench and extending beyond the top surface of the layer of first porous material and perforated gas recovery piping located in the second porous material. | 10-29-2009 |
20110045580 | In-Situ Reclaimable Anaerobic Composter - An in-situ dry anaerobic composter containing 40% to 75% by weight solids and located in a section of ground including a pit having side walls and a bottom, an essentially impervious liner located in the pit such that the liner abuts the pit side walls and bottom to form a lined pit, a compostable material located in the lined pit and a gas management system for extracting a gaseous anaerobic decomposition product from the compostable material as well as methods for operating the anaerobic composter. | 02-24-2011 |
Van Mieczkowski, Apex, NC US
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20080217641 | LIGHT EMITTING DEVICES HAVING A ROUGHENED REFLECTIVE BOND PAD AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING ROUGHENED REFLECTIVE BOND PADS - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided. | 09-11-2008 |
20090250716 | LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided. | 10-08-2009 |
20110227089 | MULTILAYER DIFFUSION BARRIERS FOR WIDE BANDGAP SCHOTTKY BARRIER DEVICES - Semiconductor Schottky barrier devices include a wide bandgap semiconductor layer, a Schottky barrier metal layer on the wide bandgap semiconductor layer and forming a Schottky junction, a current spreading layer on the Schottky barrier metal layer remote from the wide bandgap semiconductor layer and two or more diffusion barrier layers between the current spreading layer and the Schottky barrier metal layer. The first diffusion barrier layer reduces mixing of the current spreading layer and the second diffusion barrier layer at temperatures of the Schottky junction above about 300° C. and the second diffusion barrier layer reduces mixing of the first diffusion barrier layer and the Schottky barrier metal layer at the temperatures of the Schottky junction above about 300° C. | 09-22-2011 |
20110266557 | Semiconductor Devices Having Improved Adhesion and Methods of Fabricating the Same - Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed. | 11-03-2011 |
20110278590 | Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same - Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein. | 11-17-2011 |
20120080709 | LIGHT EMITTING DEVICES HAVING ROUGHENED/REFLECTIVE CONTACTS AND METHODS OF FABRICATING SAME - Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided. | 04-05-2012 |
20120115319 | CONTACT PAD - The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process. | 05-10-2012 |
20120306611 | THIN FILM RESISTOR - The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer. | 12-06-2012 |
20130228796 | HIGH VOLTAGE SEMICONDUCTOR DEVICES INCLUDING ELECTRIC ARC SUPPRESSION MATERIAL AND METHODS OF FORMING THE SAME - A high voltage semiconductor device can include a high voltage semiconductor device package that includes a wall defining a recess within the high voltage semiconductor device package. A high voltage semiconductor chip can be in the recess and a high voltage electric arc suppression material can be in the recess. | 09-05-2013 |
20130256841 | VIA PLUGS - The present disclosure relates to providing via plugs in vias of a semiconductor material. The via plugs may be formed of a polymer, such as a polyimide, that can withstand subsequent soldering and operating temperatures. The via plugs effectively fill the vias to prevent the vias from being filled substantially with solder during a subsequent soldering processes. | 10-03-2013 |
20140022048 | THIN FILM RESISTOR - The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer. | 01-23-2014 |
Van Allen Mieczkowski, Apex, NC US
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20110115058 | DEVICES WITH CRACK STOPS - An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device. | 05-19-2011 |
20130189829 | DEVICES WITH CRACK STOPS - An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device. | 07-25-2013 |