Patent application number | Description | Published |
20100135695 | CHARGING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A charging member is provided which can inhibit defective images due to poor charging and adhering substances from occurring even after being repeatedly used for a long time, and can inhibit deformation and defective images due to the C set, caused by a change in rotational speed accompanying such deformation even after being left standing in a stopping state for a long time. The charging member includes a conductive support and a surface layer. The surface layer includes a binder and resin particles dispersed in the binder, each resin particle having a depressed portion on its surface. Protrusions resulting from the resin particles are formed on the surface of the surface layer. The protrusions each have a depressed portion resulting from the depressed portion of the resin particle, and the surface of the resin particle is covered with the binder. | 06-03-2010 |
20100226684 | CHARGING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A charging member is provided having a support, a conductive elastic layer formed on the support and a surface layer formed on the conductive elastic layer. The surface layer contains a polysiloxane having at least one of structures represented by the following formulas (1a1), (1a2), (1b1) and (1b2): | 09-09-2010 |
20110044725 | CHARGING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A charging member is provided which can inhibit defective images due to poor charging and adhering substances from occurring even after being repeatedly used for a long time, and can inhibit deformation and defective images due to the C set, caused by a change in rotational speed accompanying such deformation even after being left standing in a stopping state for a long time. The charging member includes a conductive support and a surface layer. The surface layer includes a binder and resin particles dispersed in the binder, each resin particle having a depressed portion on its surface. Protrusions resulting from the resin particles are formed on the surface of the surface layer. The protrusions each have a depressed portion resulting from the depressed portion of the resin particle, and the surface of the resin particle is covered with the binder. | 02-24-2011 |
20120076924 | CHARGING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - A charging member is provided having a support, a conductive elastic layer formed on the support and a surface layer formed on the conductive elastic layer. The surface layer contains a polysiloxane having at least one of structures represented by the following formulas (1a1), (1a2), (1b1) and (1b2): | 03-29-2012 |
20120141162 | CHARGING MEMBER, PROCESS CARTRIDGE, AND ELECTROPHOTOGRAPHIC APPARATUS - Provided is the following charging member of an electrophotographic apparatus. The charging member suppresses the occurrence of each of a streak-like image, a spot-like image, and a rough image that occur when image formation is performed over a long time period. Also provided are a process cartridge and an electrophotographic apparatus each having the charging member. A compound having a siloxane dendrimer structure at a vinyl group or a side chain of a vinyl polymer is incorporated into the surface layer of the charging member comprising a conductive substrate and the surface layer. | 06-07-2012 |
20130266338 | ELECTROPHOTOGRAPHIC MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS - The present invention provides an electrophotographic member capable of more definitely suppressing occurrence of a C set image. The electrophotographic member has a surface layer including a modified polysiloxane having a structure represented by the following formula (1). In the formula (1), G represents a bivalent group having an ethylene oxide chain represented by (āOāC | 10-10-2013 |
Patent application number | Description | Published |
20090153687 | CAMERA AND CONTROL METHOD THEREFOR, AND CAMERA CRADLE SYSTEM - A camera that has an acquisition unit which acquires an identifier via a cradle apparatus connected to the camera, a comparison unit which compares the identifier acquired by the acquisition unit with an identifier stored in a memory, and a camera controller which controls access of the apparatus connected via the cradle apparatus based on comparison results by the comparison unit. | 06-18-2009 |
20150035976 | SETTING APPARATUS, METHOD, AND STORAGE MEDIUM - A setting apparatus, that sets a frequency for determining whether an object in a moving image is a predetermined object, determines whether an object in the moving image is the predetermined object, and when it determines that the object is the predetermined object, it sets the frequency for determining to be lower than before determining that the object is the predetermined object. | 02-05-2015 |
20150098694 | RECORDING CONTROL APPARATUS, RECORDING CONTROL METHOD, AND RECORDING MEDIUM - A recording control apparatus includes a generation unit configured to generate metadata to determine whether a first subdirectory included in a first directory of a recording device includes an image to be restricted from being deleted from the recording device, and a recording control unit configured to cause the first subdirectory to record a plurality of first images and cause the first directory to record first metadata generated by the generation unit. | 04-09-2015 |
Patent application number | Description | Published |
20100314694 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region formed on the other side of the channel region; a gate electrode formed on the channel region via a gate insulating film; and a stress-introducing layer that applies stress to the channel region, the semiconductor device having a stress distribution in which source region-side and drain region-side peaks are positioned between a pn junction boundary of the channel region and the source region and a pn junction boundary of the channel region and the drain region. | 12-16-2010 |
20110042752 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes the steps of: (a) forming a gate electrode on a substrate, forming source/drain regions and a channel forming region in the substrate, and forming on the source/drain regions a first interlayer insulating layer equal in height to the gate electrode; (b) forming in the first interlayer insulating layer groove-shaped first contact portions connected to the source/drain regions; (c) forming a second interlayer insulating layer on a whole surface; (d) forming hole-shaped second contact portions in portions of the second interlayer insulating layer on the first contact portion; and (e) forming on the second interlayer insulating layer wires connected to the second contact portions. | 02-24-2011 |
20120032240 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a field effect transistor including: a semiconductor substrate including a channel forming region; a gate insulating film formed at the channel forming region on the semiconductor substrate; a gate electrode formed over the gate insulating film; a first stress application layer formed over the gate electrode and applying stress to the channel forming region; a source/drain region formed on a surface layer portion of the semiconductor substrate at both sides of the gate electrode and the first stress application layer; and a second stress application layer formed over the source/drain region in a region other than at least a region of the first stress application layer and applying stress different from the first stress application layer to the channel forming region. | 02-09-2012 |
20120199829 | SEMICONDUCTOR DEVICE - A semiconductor device includes: plural devices to be measured; and a combined array wiring including plural unit array wirings each having a column wiring and a row wiring provided in different layers as well as each connected to any one of the plural devices to be measured, in which the plural unit array wirings are provided in layers different from each other. | 08-09-2012 |
Patent application number | Description | Published |
20090242851 | ZnO DEPOSITION MATERIAL AND ZnO FILM FORMED OF THE SAME - A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method. | 10-01-2009 |
20100243966 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 09-30-2010 |
20120119166 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 05-17-2012 |