Patent application number | Description | Published |
20090302266 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING, CHEMICAL MECHANICAL POLISHING METHOD, AND KIT FOR PREPARING AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING - A chemical mechanical polishing aqueous dispersion comprises (A) abrasive grains, (B) an organic acid, (C) a water-soluble polymer, (D) an oxidizing agent, and (E) water, the water-soluble polymer (C) having a weight average molecular weight of 50,000 to 5,000,000. | 12-10-2009 |
20110053462 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion including (A) silica particles, and (B1) an organic acid, the sodium content, the potassium content, and the ammonium ion content of the silica particles (A) determined by ICP atomic emission spectrometry, ICP mass spectrometry, or ammonium ion quantitative analysis using ion chromatography having a relationship in which the sodium content is 5 to 500 ppm and at least one of the potassium content and the ammonium ion content is 100 to 20,000 ppm. | 03-03-2011 |
20110081780 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion includes (A) silica particles, and (B1) an organic acid, the number of silanol groups included in the silica particles (A) calculated from a signal area of a | 04-07-2011 |
Patent application number | Description | Published |
20090242099 | METHOD OF PRODUCING A PIEZOSTACK DEVICE - A method of producing a piezostack device including multiple piezoelectric ceramic layers of a crystal-orientated ceramic and multiple electrode-containing layers laminated alternately. A raw material mixture is prepared in the mixing step, as an anisotropically shaped powder of oriented particles and a reactive raw powder are mixed. The anisotropically shaped powder and the reactive raw powder are then mixed in amounts at a stoichiometric ratio giving an isotropic perovskite compound, and a Nb | 10-01-2009 |
20090295255 | MULTILAYERED PIEZOELECTRIC ELEMENT AND METHOD OF PRODUCING THE SAME - A multilayered piezoelectric element and a method of producing the multilayered piezoelectric element are disclosed. The multilayered piezoelectric element is made of piezoelectric ceramic layers and electrode formation layers which are alternately laminated. The piezoelectric ceramic layers are made of crystal oriented ceramic as polycrystalline material. The crystal oriented ceramic is made mainly of an isotropic perovskite type compound in which the specific {100} crystal plane of each of crystal grains that form the polycrystalline material is oriented. The electrode formation layers have electrode parts forming inner electrodes containing a conductive metal. The isotropic perovskite type compound is expressed by a general formula (1): [Ag | 12-03-2009 |
20100270155 | GAS SENSOR ELEMENT, GAS SENSOR EQUIPPED WITH GAS SENSOR ELEMENT, AND METHOD OF PRODUCING GAS SENSOR ELEMENT - A gas sensor element has a solid electrolyte of an oxygen ion conductivity, a target gas electrode formed on one surface of the solid electrolyte, a reference gas electrode formed on the other surface of the solid electrolyte, a porous diffusion resistance layer through which the target gas passes to reach the target gas electrode, and a catalyst layer formed on an outer surface of the porous diffusion resistance layer. The target gas electrode is formed around the porous diffusion resistance layer. The catalyst layer contains noble metal catalysts. The noble metal catalysts contain at least rhodium and palladium. A content of rhodium is not less than 10 mass % and a content of palladium is not less than 20 mass % to the entire of the noble metal catalysts. | 10-28-2010 |
20110139619 | NOBLE METAL CATALYST POWDER, GAS SENSOR ELEMENT USING NOBLE METAL CATALYST POWDER, AND GAS SENSOR - A noble metal catalyst powder produced by using co-precipitation method is made of noble metal alloy particles containing Pa, Pd, and Rh. The noble metal alloy particles have an average particle size within a range of 0.2 μm to 2.0 μm. A standard deviation in content of each of Pa, Pd, and Rh is not more than 20 mass %. This standard deviation in content of each of Pa, Pd, and Rh is detected at not less than ten detection-points of the noble metal catalyst powder by quantitative elemental analysis. A gas sensor element has the noble metal catalyst powder. An A/F sensor is equipped with the gas sensor element using the noble metal catalyst powder. | 06-16-2011 |
Patent application number | Description | Published |
20090246924 | Method of producing field effect transistor - The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability. | 10-01-2009 |
20090278172 | GaN based semiconductor element - The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves. | 11-12-2009 |
20090325339 | Process for producing semiconductor device - An optical absorption layer comprised of a substance having a band gap energy smaller than that of GaN is formed on an implanted region formed in a pGaN layer as a ground layer. There is performed an annealing step from an upper surface of a substrate with predetermined light such as infrared light, a red light, or the like, which has energy smaller than the band gap energy of the pGaN layer. The optical absorption layer has an absorption coefficient of the light in the annealing step larger than that of the pGaN layer. Accordingly, it is possible to selectively perform a heat treatment on a region directly under the optical absorption layer or a region in a vicinity thereof (the implanted region). | 12-31-2009 |
20100032683 | GaN-BASED SEMICONDUCTOR ELEMENT - The GaN-based semiconductor element | 02-11-2010 |
20130005874 | PIGMENT COMPOSITION - The present invention relates to a pigment composition containing a) a pigment, and b) a polyvinyl alcohol/acrylic acid/methyl methacrylate copolymer or an aminoalkyl methacrylate copolymer, and such pigment composition is available in the use for drug medicines and the like, and exhibits better dispersibility. | 01-03-2013 |