Patent application number | Description | Published |
20100237355 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency. | 09-23-2010 |
20100283103 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A method for manufacturing a semiconductor device includes: a first step of forming a base layer, which includes an element portion having a gate electrode and a flat interlayer insulating film formed so as to cover the gate electrode; a second step of ion implanting a delamination material into the base layer to form a delamination layer; a third step of bonding the base layer to a substrate; and a fourth step of separating and removing a part of the base layer along the delamination layer. An implantation depth of the delamination material in the gate electrode is substantially the same as that of the delamination material in the interlayer insulating film. | 11-11-2010 |
20100295047 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - To provide a semiconductor device which achieves a high ON current and a low OFF current at the same time, and a fabrication method thereof. | 11-25-2010 |
20110006376 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND DISPLAY DEVICE - The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including:
| 01-13-2011 |
20110101354 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device | 05-05-2011 |
20110147756 | SEMICONDUCTOR DEVICE - A semiconductor device | 06-23-2011 |
20110274234 | SHIFT REGISTER - A shift register of at least one embodiment of the present invention is a shift register supported by an insulative substrate, wherein: the shift register includes a plurality of stages each sequentially outputting output signals; each of the plurality of stages includes a first transistor for outputting the output signals, and a plurality of second transistors whose source region or drain region is electrically connected to a gate electrode of the first transistor; and the plurality of second transistors include a multi-channel transistor having an active layer including at least two channel regions, a source region and a drain region. This improves characteristics of a shift register forming a monolithic gate driver. | 11-10-2011 |
20110303916 | SEMICONDUCTOR DEVICE - A semiconductor device of the present invention includes: a lower electrode ( | 12-15-2011 |
20120034765 | MANUFACTURING METHOD OF MICROCRYSTALLINE SILICON FILM AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film. | 02-09-2012 |
20120043543 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - Disclosed is a semiconductor device provided with the following: an active layer | 02-23-2012 |
20120104403 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - An object of the present invention is to provide a thin film transistor having a gate insulating film for suppressing a shift amount of a threshold voltage generated by use under a high temperature environment. In a thin film transistor having a channel layer made of microcrystalline silicon, a gate insulating film | 05-03-2012 |
20120273785 | PHOTOSENSOR ELEMENT, PHOTOSENSOR CIRCUIT, THIN FILM TRANSISTOR SUBSTRATE, DISPLAY PANEL, AND METHOD FOR MANUFACTURING PHOTOSENSOR ELEMENT - A photosensor element ( | 11-01-2012 |
20120292627 | PHOTOSENSOR ELEMENT, PHOTOSENSOR CIRCUIT, THIN-FILM TRANSISTOR SUBSTRATE, AND DISPLAY PANEL - Disclosed is a photosensor element that is provided with a gate electrode ( | 11-22-2012 |
20130056742 | MICROCRYSTALLINE SILICON FILM, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF - A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive. | 03-07-2013 |
20140103342 | TFT SUBSTRATE AND METHOD FOR MANUFACTURING SAME - A method of manufacturing a TFT substrate includes: forming a gate electrode ( | 04-17-2014 |
20140110249 | SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - The purpose of the present invention is to provide a sputtering target with which a film having excellent characteristics can be obtained. A sputtering target ( | 04-24-2014 |
Patent application number | Description | Published |
20080318390 | Method for fabricating semiconductor device and semiconductor device - A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions each being provided between adjacent ones of the first region. The fabrication method includes an isolation insulation film formation step of forming an isolation insulation film in each of the second regions so that a surface of the isolation insulation film becomes at the same height as that of a surface of a gate oxide film covering the active region, a peeling layer formation step of forming a peeling layer by ion-implanting hydrogen into the substrate layer after the isolation insulation film formation step, and a separation step of separating part of the substrate layer along the peeling layer. | 12-25-2008 |
20090309100 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device includes a semiconductor layer having a channel region, an impurity layer having a source region and a drain region, and a gate electrode provided so as to face the semiconductor layer with a gate insulating film interposed therebetween. The semiconductor layer has a layered structure of at least a first amorphous film and a crystalline film including a crystal phase, and the first amorphous film is formed directly on the gate insulating film. | 12-17-2009 |
20100059892 | PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF DISPLAY DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT - The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer. | 03-11-2010 |
Patent application number | Description | Published |
20090191671 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS FOR THEM - The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate. | 07-30-2009 |
20110269284 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS FOR THEM - The present invention provides a semiconductor substrate, which comprises a singlecrystalline Si substrate which includes an active layer having a channel region, a source region, and a drain region, the singlecrystalline Si substrate including at least a part of a device structure not containing a well-structure or a channel stop region; a gate insulating film formed on the singlecrystalline Si substrate; a gate electrode formed on the gate insulating film; a LOCOS oxide film whose thickness is more than a thickness of the gate insulating film, the LOCOS oxide film being formed on the singlecrystalline Si substrate by surrounding the active layer; and an insulating film formed over the gate electrode and the LOCOS oxide film. On this account, on fabricating the semiconductor device having a high-performance integration system by forming the non-singlecrystalline Si semiconductor element and the singlecrystalline Si semiconductor element on the large insulating substrate, the process for making the singlecrystalline Si is simplified. Further, the foregoing arrangement provides a semiconductor substrate and a fabrication method thereof, which ensures device isolation of the minute singlecrystalline Si semiconductor element without highly-accurate photolithography, when the singlecrystalline Si semiconductor element is transferred onto the large insulating substrate. | 11-03-2011 |