Patent application number | Description | Published |
20100258931 | Semiconductor device and method of forming the same - A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness. | 10-14-2010 |
20100258932 | Supporting substrate before cutting, semiconductor device, and method of forming semiconductor device - A method of forming a semiconductor device may include, but is not limited to, the following processes. A supporting substrate is prepared. The supporting substrate has a chip mounting area, and a plurality of penetrating slits around the chip mounting area. At least a stack of semiconductor chips is formed over the chip mounting area. A first sealing member is formed, which seals the stack of semiconductor chips without the first sealing member filling the plurality of penetrating slits. | 10-14-2010 |
20110057327 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a first wiring hoard, a second semiconductor chip, and a second seal. The first wiring board includes a first substrate, a first semiconductor chip, and a first seal. The first semiconductor chip is disposed on the first substrate. The first seal is disposed on the first substrate. The first seal surrounds the first semiconductor chip. The first seal has the same thickness as the first semiconductor chip. The second semiconductor chip is stacked over the first semiconductor chip. The first semiconductor chip is between the second semiconductor chip and the first substrate. The second semiconductor chip is greater in size in plan view than the first semiconductor chip. The second seal seals at least a first gap between the first semiconductor chip and the second semiconductor chip. | 03-10-2011 |
20110147945 | SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING GENERATION OF CRACKS IN SEMICONDUCTOR CHIP DURING MANUFACTURING PROCESS - A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in one end of the chip stacked body, and including electrodes electrically connected to the penetration electrodes of the first semiconductor chip, and a wiring board that is disposed to face a second semiconductor chip formed in an end opposed to the one end of the chip stacked body, and including external electrodes on a surface opposed to a surface facing the second semiconductor chip that is to be electrically connected to the penetration electrodes of the second semiconductor chip. | 06-23-2011 |
20120018352 | HYDROTREATING CATALYST, PROCESS FOR PRODUCING SAME, AND PROCESS FOR HYDROTREATING HYDROCARBON OIL - A hydrotreating catalyst that exhibits excellent levels of both desulfurization activity and denitrification activity. The hydrotreating catalyst is prepared by supporting molybdenum, cobalt and nickel on a carrier comprising aluminum, silicon, phosphorus and boron, and then performing a presulfiding treatment, and has an average stacking number for molybdenum sulfide slab that is greater than 1.0 but not more than 1.9. Also, a process for producing a hydrotreating catalyst that enables a hydrotreating catalyst having excellent levels of both desulfurization activity and denitrification activity to be produced with comparative ease. The process includes a first step of mixing an acidic aluminum salt aqueous solution and a basic aluminum salt aqueous solution in the presence of phosphate ions and silicate ions to achieve a pH of 6.5 to 9.5, thereby obtaining a hydrate, a second step of adding boron to the hydrate to prepare a carrier-forming material, a third step of molding and calcining the carrier-forming material to obtain a carrier, a fourth step of supporting molybdenum, cobalt and nickel on the carrier to obtain a catalyst precursor, and a fifth step of performing a presulfiding treatment by bringing the catalyst precursor into contact with a mixed gas containing hydrogen and hydrogen sulfide under conditions including a pressure of not less than 2.0 MPa and a maximum temperature of 240 to 380° C. | 01-26-2012 |
20120098145 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a chip stacked structure. The chip stacked structure may include, but is not limited to, first and second semiconductor chips. The first semiconductor chip has a first thickness. The second semiconductor chip has a second thickness that is thinner than the first thickness. | 04-26-2012 |
20120244129 | PLURIPOTENT STEM CELL THAT CAN BE ISOLATED FROM BODY TISSUE - Objects of the present invention are to provide a method for directly obtaining pluripotent stem cells which do not have tumorigenic property from body tissue and the thus obtained pluripotent stem cells. The present invention relates to SSEA-3 (+) pluripotent stem cells that can be isolated from body tissue. | 09-27-2012 |
20120252165 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for forming a semiconductor device includes the following processes. A first semiconductor chip and a second semiconductor chip are stacked to form a stacked structure. A gap between the first and second semiconductor chips of the stacked structure is filled with a filler. A temperature of the stacked first and second semiconductor chips is kept more than room temperature from the stacking to the filing. | 10-04-2012 |