Patent application number | Description | Published |
20080251849 | Semiconductor Device and Method for Manufacturing Same - A semiconductor device comprising a first semiconductor region and a second semiconductor region,
| 10-16-2008 |
20090014795 | Substrate for field effect transistor, field effect transistor and method for production thereof - A π gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition. | 01-15-2009 |
20090033403 | LEVEL CONVERTING CIRCUIT - A level shifter in which short circuit current and the increase in delay are reduced when a first power source is controlled. | 02-05-2009 |
20090201063 | DYNAMIC SEMICONDUCTOR DEVICE - A dynamic semiconductor device is provided with a plurality of master step sections having hatch sections for temporarily storing input data and dynamic gate sections; a plurality of slave step sections, which are alternately connected with master step sections and provided with dynamic gate sections or with latch sections and dynamic gate sections; and a timing signal generating section for generating a signal for controlling operation of the master step sections and the slave step sections. The timing signal generating section supplies the latch sections with signals for storing data of the previous step before the data is erased. | 08-13-2009 |
20090274575 | PRECISION ALLOY - A precision alloy for die-casting contains aluminum, silicon and zinc, wherein on the basis of the overall mass, the content of aluminum is 40% by mass or more and 45% by mass or less, and the content of silicon is 2% by mass or more and 8% by mass or less. Also other solving means will be described. | 11-05-2009 |
20100033235 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A control circuit controls a power-source-voltage feed circuit, and controls a power source voltage fed to a target circuit. A reference-speed monitor monitors whether or not a delay time of a critical path in the target circuit is satisfies a required operational speed. A voltage-difference monitor monitors a difference between the power source voltage of the target circuit and a threshold voltage of the target circuit, to output the voltage difference information. The control circuit determines whether to increase or decrease the power source voltage based on a result of monitoring by the reference-speed monitor. The control circuit determines the change rate of the power source voltage so that the control rate of the power source voltage is proportional to the voltage difference information output from the voltage-difference monitor. | 02-11-2010 |
20100327961 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY VOLTAGE CONTROL SYSTEM - A semiconductor integrated circuit device includes: a target circuit whose at least power supply voltage is variable; a power supply voltage providing circuit feeding the target circuit with a power supply voltage; and a minimum energy point monitor circuit detecting an energy-minimizing power supply voltage which minimizes a change in the energy consumed by the target circuit upon a change in the power supply voltage. The power supply voltage delivered by the power supply voltage providing circuit is controlled so as to be equal to the energy-minimizing power supply voltage detected by the minimum energy point monitor circuit. | 12-30-2010 |
20110285478 | PRECISION ALLOY - A precision alloy for die-casting contains aluminum, silicon and zinc, wherein on the basis of the overall mass, the content of aluminum is 40% by mass or more and 45% by mass or less, and the content of silicon is 2% by mass or more and 8% by mass or less. Also other solving means will be described. | 11-24-2011 |
20130070402 | COMMUNICATION DEVICE AND PRODUCING METHOD FOR ENCLOSURE OF THE SAME - An enclosure that contains a transmission section and a reception section of an ODU is protected against hard environments without it being necessary to apply a coating of paint to the enclosure. The present invention is communication device (ODU) ( | 03-21-2013 |
20130181872 | COMMUNICATION APPARATUS - The purpose of the present invention is to reduce the cost of a product while ensuring reliability of the product as a wireless transmission/reception apparatus. Provided is communication apparatus (ODU) (1) installed outside, which includes a case that houses a transmission unit for transmitting a signal and a reception unit for receiving the signal, and a waveguide connected to an external antenna and configured to receive/transmit a signal. In the apparatus, the waveguide is formed integrally with the case, and taper (16) is formed in a part of the tube hole of the waveguide. | 07-18-2013 |