Patent application number | Description | Published |
20080291350 | ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME - In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region. | 11-27-2008 |
20090021536 | DRIVING CIRCUIT OF DISPLAY ELEMENT AND IMAGE DISPLAY APPARATUS - A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit. | 01-22-2009 |
20090072232 | Thin-Film Transistor and Display Device using Oxide Semiconductor - The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode. | 03-19-2009 |
20090102829 | PIXEL CIRCUIT AND IMAGE DISPLAY APPARATUS HAVING THE PIXEL CIRCUIT - A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission. | 04-23-2009 |
20090272970 | FIELD-EFFECT TRANSISTOR - Provided is a field-effect transistor including an active layer and a gate insulating film, wherein the active layer includes an amorphous oxide layer containing an amorphous region and a crystalline region, and the crystalline region is in the vicinity of or in contact with an interface between the amorphous oxide layer and the gate insulating film. | 11-05-2009 |
20090325341 | PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM - A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10 | 12-31-2009 |
20100044701 | THIN-FILM TRANSISTOR FABRICATION PROCESS AND DISPLAY DEVICE - In a process for fabricating a thin-film transistor in which a gate electrode | 02-25-2010 |
20100045179 | DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION METHOD THEREOF - There are provided a display apparatus which can be stably driven for a long period of time and can display an image with high definition and less image defect, and a production method thereof. The display apparatus includes a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer, wherein the active layer includes an oxide which contains In and Zn and at least a part of which is amorphous, and wherein a second insulating layer containing hydrogen in an amount of less than 3×10 | 02-25-2010 |
20100059751 | THIN-FILM TRANSISTOR AND PROCESS FOR ITS FABRICATION - A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less. | 03-11-2010 |
20100085081 | INVERTER MANUFACTURING METHOD AND INVERTER - To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors. | 04-08-2010 |
20100090205 | ACTIVE MATRIX DISPLAY APPARATUS - An active matrix display apparatus including a transistor | 04-15-2010 |
20100117072 | LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME - To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm | 05-13-2010 |
20110012107 | FIELD EFFECT TRANSISTOR - A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10 | 01-20-2011 |
20110042670 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a coplanar structure thin film transistor that allows a threshold voltage to change only a little under electric stress, and a method of manufacturing the same. The thin film transistor includes on a substrate at least: a gate electrode; a gate insulating layer; an oxide semiconductor layer including a source electrode, a drain electrode, and a channel region; a channel protection layer; and an interlayer insulating layer. The channel protection layer includes one or more layers, the layer in contact with the oxide semiconductor layer among the one or more layers being made of an insulating material containing oxygen, ends of the channel protection layer are thinner than a central part of the channel protection layer, the interlayer insulating layer contains hydrogen, and regions of the oxide semiconductor layer that are in direct contact with the interlayer insulating layer form the source electrode and the drain electrode. | 02-24-2011 |
20110065269 | ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME - In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region. | 03-17-2011 |
20110092016 | METHOD OF TREATING SEMICONDUCTOR ELEMENT - In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 10 | 04-21-2011 |
20120142131 | METHOD OF MANUFACTURING DISPLAY APPARATUS - Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes forming a transparent anode electrode for applying a charge to an emission layer, forming a first coating layer and a second coating layer on the transparent anode electrode, removing the first coating layer by etching using the second coating layer as a mask, and forming a layer including the emission layer on a part of the transparent anode electrode from which the first coating layer is removed. A surface of the transparent anode electrode becomes as clean as a surface cleaned with ultraviolet irradiation. | 06-07-2012 |
20120168749 | DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION THEREOF - A transistor includes a source terminal and a drain terminal, an active layer including an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. At least a part of the active layer is amorphous, and an electric current flowing between the source terminal and the drain terminal of the transistor is less than 10 μA when the transistor is in an off state. In addition, the gate insulating layer contains hydrogen in an amount of less than 3×10 | 07-05-2012 |
20130127812 | DRIVING CIRCUIT OF DISPLAY ELEMENT AND IMAGE DISPLAY APPARATUS - A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit. | 05-23-2013 |