Patent application number | Description | Published |
20120068187 | SOLID STATE LIGHTING DEVICES WITH IMPROVED COLOR UNIFORMITY AND METHODS OF MANUFACTURING - Solid state lighting (SSL) devices with good color uniformity and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a support structure, an SSL die in the support structure, and a converter material at least partially encapsulating the SSL die. The converter material is configured to emit under excitation. The converter material has a surface facing away from the SSL die, and the surface of the converter material has a generally convex shape. | 03-22-2012 |
20120153304 | SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING - Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding. | 06-21-2012 |
20120161161 | ARRAY ASSEMBLIES WITH HIGH VOLTAGE SOLID STATE LIGHTING DIES - Various embodiments of solid state lighting (“SSL”) assemblies with high voltage SSL dies and methods of manufacturing are described herein. In one embodiment, an array assembly of SSL dies includes a first terminal and a second terminal configured to receive an input voltage (Vo). The array assembly also includes a plurality of SSL dies coupled between the first terminal and the second terminal, at least some of which are high voltage SSL dies coupled in parallel. | 06-28-2012 |
20120267650 | SOLID STATE LIGHTING DEVICES HAVING IMPROVED COLOR UNIFORMITY AND ASSOCIATED METHODS - Solid state lighting (SSL) devices and methods of manufacturing SSL devices are disclosed herein. In one embodiment, an SSL device comprises a support having a surface and a solid state emitter (SSE) at the surface of the support. The SSE can emit a first light propagating along a plurality of first vectors. The SSL device can further include a converter material over at least a portion of the SSE. The converter material can emit a second light propagating along a plurality of second vectors. Additionally, the SSL device can include a lens over the SSE and the converter material. The lens can include a plurality of diffusion features that change the direction of the first light and the second light such that the first and second lights blend together as they exit the lens. The SSL device can emit a substantially uniform color of light. | 10-25-2012 |
20120313074 | LONG WAVELENGTH LIGHT EMITTING DEVICES WITH HIGH QUANTUM EFFICIENCIES - Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, and the first emission having a first center wavelength. The light emitting device also includes a second active region spaced apart from the first active region. The second active region is configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, and the second emission having a second center wavelength longer than the first center wavelength. | 12-13-2012 |
20120313125 | LIGHT EMITTING DEVICES WITH EFFICIENT WAVELENGTH CONVERSION AND ASSOCIATED METHODS - Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region is configured to produce a light via electroluminescence. The light emitting device also includes a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlGaInP) doped with an N-type dopant. | 12-13-2012 |
20120326187 | SOLID STATE LIGHTING DEVICES WITH IMPROVED CURRENT SPREADING AND LIGHT EXTRACTION AND ASSOCIATED METHODS - Solid state lighting (“SSL”) devices with improved current spreading and light extraction and associated methods are disclosed herein. In one embodiment, an SSL device includes a solid state emitter (“SSE”) that has a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device can further include a first contact on the first semiconductor material and a second contact on the second semiconductor material and opposite the first contact. The second contact can include one ore more interconnected fingers. Additionally, the SSL device can include an insulative feature extending from the first contact at least partially into the first semiconductor material. The insulative feature can be substantially aligned with the second contact. | 12-27-2012 |
20130043481 | HIGH-VOLTAGE SOLID-STATE TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS - High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can a forward junction voltage less than the output voltage. | 02-21-2013 |
20130049020 | SOLID STATE TRANSDUCERS WITH STATE DETECTION, AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor. | 02-28-2013 |
20130049043 | ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light. | 02-28-2013 |
20130049059 | SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate. | 02-28-2013 |
20130052759 | VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS - Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side. | 02-28-2013 |
20130127365 | LIGHT EMISSION SYSTEMS HAVING NON-MONOCHROMATIC EMITTERS AND ASSOCIATED SYSTEMS AND METHODS - Emission systems having solid-state transducers (SSTs) for producing a target chromaticity of light are disclosed herein. An emission system or SST device in accordance with a particular embodiment can include a first emitter having a first plurality of SSTs positioned to emit light having a first chromaticity, and a second emitter having a second plurality of SSTs positioned to emit light having a second chromaticity different than the first chromaticity. The SST device can further include a controller having a first channel with a variable output, coupled to the first emitter to adjust the brightness level of the first emitter, and a second channel with a variable output, coupled to the second emitter to adjust the brightness level of the second emitter. | 05-23-2013 |
20130175560 | VERTICAL SOLID-STATE TRANSDUCERS AND SOLID-STATE TRANSDUCER ARRAYS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducers (“SSTs”) and SST arrays having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a first contact at the first side and electrically coupled to the first semiconductor material, and a second contact extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. A carrier substrate having conductive material can be bonded to the first and second contacts. | 07-11-2013 |
20130175562 | SOLID-STATE RADIATION TRANSDUCER DEVICES HAVING AT LEAST PARTIALLY TRANSPARENT BURIED-CONTACT ELEMENTS, AND ASSOCIATED SYSTEMS AND METHODS - Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed herein. An SSRT device configured in accordance with a particular embodiment can include a radiation transducer including a first semiconductor material, a second semiconductor material, and an active region between the first semiconductor material and the second semiconductor material. The SSRT device can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. The second contact can include a plurality of buried-contact elements electrically coupled to the second semiconductor material. Individual buried-contact elements can have a transparent portion directly adjacent to the second semiconductor material. The second contact can further include a base portion extending between the buried-contact elements, such as a base portion that is least partially planar and reflective. | 07-11-2013 |
20130228815 | VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS - Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side. | 09-05-2013 |
20130285107 | SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING - Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding. | 10-31-2013 |
20130292636 | SOLID-STATE TRANSDUCER ASSEMBLIES WITH REMOTE CONVERTER MATERIAL FOR IMPROVED LIGHT EXTRACTION EFFICIENCY AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducer (“SST”) assemblies with remote converter material and improved light extraction efficiency and associated systems and methods are disclosed herein. In one embodiment, an SST assembly has a front side from which emissions exit the SST assembly and a back side opposite the front side. The SST assembly can include a support substrate having a forward-facing surface directed generally toward the front side of the SST assembly and an SST structure carried by the support substrate. The SST structure can be configured to generate SST emissions. The SST assembly can further include a converter material spaced apart from the SST structure. The forward-facing surface and the converter material can be configured such that at least a portion of the SST emissions that exit the SST assembly at the front side do not pass completely through the converter material. | 11-07-2013 |
20130308309 | SOLID-STATE TRANSDUCER DEVICES WITH SELECTIVE WAVELENGTH REFLECTORS AND ASSOCIATED SYSTEMS AND METHODS - Solid state transducer (“SST”) devices with selective wavelength reflectors and associated systems and methods are disclosed herein. In several embodiments, for example, an SST device can include a first emitter configured to emit emissions having a first wavelength and a second emitter configured to emit emissions having a second wavelength different from the first wavelength. The first and second emitters can be SST structures and/or converter materials. The SST device can further include a selective wavelength reflector between the first and second emitters. The selective wavelength reflector can be configured to at least substantially transmit emissions having the first wavelength and at least substantially reflect emissions having the second wavelength. | 11-21-2013 |
20130320370 | SOLID STATE TRANSDUCER DIES HAVING REFLECTIVE FEATURES OVER CONTACTS AND ASSOCIATED SYSTEMS AND METHODS - Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device. | 12-05-2013 |
20130320386 | METHODS OF SEPARATING SOLID STATE TRANSDUCERS FROM SUBSTRATES AND ASSOCIATED DEVICES AND SYSTEMS - Wafer-level processing of wafer assemblies with transducers is described herein. A method in accordance with some embodiments includes forming a solid state transducer device by forming one or more trenches to define solid state radiation transducers. An etching media is delivered in to the trenches to release the transducers from a growth substrate used to fabricate the transducers. A pad can hold the radiation transducers and promote distribution of the etching media through the trenches to underetch and release the transducers. | 12-05-2013 |
20130328068 | DEVICES, SYSTEMS, AND METHODS RELATED TO DISTRIBUTED RADIATION TRANSDUCERS - Radiation-transducer devices, e.g., lighting-emitting devices, including radiation transducers, e.g., light-emitting diodes, and associated devices, systems, and methods are disclosed herein. A radiation-transducer device configured in accordance with a particular embodiment includes a base structure including a first lead, a cap structure including a second lead, and a plurality of radiation transducers irregularly distributed between the base structure and the cap structure. The radiation transducers are non-uniformly oriented relative to the first and second leads and the device is configured to intermittently power the radiation transducers using an alternating current. A method for manufacturing radiation-transducer devices in accordance with a particular embodiment includes distributing a plurality of radiation transducers onto a base structure or a cap structure without individually handling the radiation transducers. The radiation transducers are introduced via a mixture including the radiation transducers and a non-solid carrier medium. | 12-12-2013 |
20140014988 | LIGHTING DEVICES INCLUDING PATTERNED OPTICAL COMPONENTS AND ASSOCIATED DEVICES, SYSTEMS, AND METHODS - Lighting devices including light-emitting diodes and associated devices, systems, and methods are disclosed herein. A lighting device configured in accordance with a particular embodiment includes a lighting-emitting diode and an optical component along a radiation path of the lighting-emitting diode. The optical component includes a color-converting material with walls defining a pattern, the walls extending generally entirely through a thickness of the color-converting material. A total surface area of the walls within a primary zone of the optical component is greater than a total surface area of color-converting features at a major side of the color-converting material. A method for making a lighting device in accordance with a particular embodiment includes combining an optical component and a light-emitting diode, and shaping a color-converting material of the optical component to have a thickness and a pattern of walls selected to control the color of light output from the lighting device. | 01-16-2014 |
20140014999 | SOLID STATE LIGHTING DEVICES WITH LOW CONTACT RESISTANCE AND METHODS OF MANUFACTURING - Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material. | 01-16-2014 |
20140042484 | SOLID STATE LIGHTING DEVICES WITH IMPROVED CONTACTS AND ASSOCIATED METHODS OF MAUFACTURING - Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile. | 02-13-2014 |
20140061680 | HIGH VOLTAGE SOLID-STATE TRANSDUCERS AND SOLID-STATE TRANSDUCER ARRAYS HAVING ELECTRICAL CROSS-CONNECTIONS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducer (“SST”) dies and SST arrays having electrical cross-connections are disclosed herein. An array of SST dies in accordance with a particular embodiment can include a first terminal, a second terminal and a plurality of SST dies coupled between the first and second terminals with at least a pair of the SST dies being coupled in parallel. The plurality of SST dies can individually include a plurality of junctions coupled in series with an interconnection between each individual junction. Additionally, the individual SST dies can have a cross-connection contact coupled to the interconnection. In one embodiment, the array can further include a cross-connection between the cross-connection contacts on the pair of the SST dies. | 03-06-2014 |
20140097441 | DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCTION IN SEMICONDUCTOR DEVICES - Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate. | 04-10-2014 |
20140159063 | VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials. | 06-12-2014 |
20140183442 | ENGINEERED SUBSTRATE ASSEMBLIES WITH EPITAXIAL TEMPLATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate. | 07-03-2014 |
20140203239 | SOLID-STATE TRANSDUCER DEVICES WITH OPTICALLY-TRANSMISSIVE CARRIER SUBSTRATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Semiconductor device assemblies having solid-state transducer (SST) devices and associated semiconductor devices, systems, and are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a support substrate, a transfer structure, and a plurality semiconductor structures between the support substrate and the transfer structure. The method further includes removing the support substrate to expose an active surface of the individual semiconductor structures and a trench between the individual semiconductor structures. The semiconductor structures can be attached to a carrier substrate that is optically transmissive such that the active surface can emit and/or receive the light through the carrier substrate. The individual semiconductor structures can then be processed on the carrier substrate with the support substrate removed. In some embodiments, the individual semiconductor structures are singulated from the semiconductor device assembly and include a section of the carrier substrate attached to each of the individual semiconductor structures. | 07-24-2014 |
20140239348 | METHODS, DEVICES, AND SYSTEMS RELATED TO FORMING SEMICONDUCTOR POWER DEVICES WITH A HANDLE SUBSTRATE - Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure. | 08-28-2014 |
20140361382 | SEMICONDUCTOR DEVICES HAVING COMPACT FOOTPRINTS AND RELATED DEVICES, SYSTEMS, AND METHODS - Semiconductor devices and methods for making semiconductor devices are disclosed herein. A semiconductor device configured in accordance with a particular embodiment includes a substrate having a source/drain region, an interconnect, and first and second electrodes extending between first and second sides of the substrate. The first electrode includes a first contact pad and a via extending through the substrate that connects the first contact pad with the interconnect. The second electrode includes a second contact pad and a conductive feature in the substrate that connects the second contact pad with the interconnect. | 12-11-2014 |
20140367686 | ULTRATHIN SOLID STATE DIES AND METHODS OF MANUFACTURING THE SAME - Various embodiments of SST dies and solid state lighting (“SSL”) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region. | 12-18-2014 |
20140368123 | LIGHT-EMITTING METAL-OXIDE-SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS - Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light. | 12-18-2014 |
20140375212 | MULTI-JUNCTION SOLID STATE TRANSDUCER DEVICES FOR DIRECT AC POWER AND ASSOCIATED SYSTEMS AND METHODS - Multi junction solid-state transducer (SST) devices and associated systems and methods are disclosed herein. In several embodiments, for example, an SST system can include a first multi-junction SST chain having a first drive voltage, a first P-contact, and a first N-contact, and a second multi junction SST chain having a second drive voltage, a second P-contact, and a second N-contact. The first and second multi junction SST chains can be configured to be activated independently of each other. The SST system can further include a driver operably coupled to the first and second P- and N-contacts. The driver can be configured to activate the first multi junction SST chain when voltage input is at least equal to the first drive voltage. When absolute voltage increases a predetermined voltage level, the driver can be configured to activate the second multi-junction SST chain or the first and second multi junction SST chains. | 12-25-2014 |
20150048301 | ENGINEERED SUBSTRATES HAVING MECHANICALLY WEAK STRUCTURES AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates having mechanically weak structures for separating substrates from epitaxially grown semiconductor structures and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming an intermediary material at an upper surface of a structural material and forming a plurality of pores in the intermediary material. The porous intermediary material and the structural material can define a handle substrate. The method can further include bonding an epitaxial formation structure on the handle substrate such that the porous intermediary material is between the epitaxial formation structure and the structural material. In various embodiments, the porous intermediary material is configured to break under mechanical stress. | 02-19-2015 |