Madathil
Dilip K. Madathil, San Diego, CA US
Patent application number | Description | Published |
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20130157671 | METHOD AND APPARATUS FOR COMPUTING A SCHEDULED LOAD IN WIRELESS COMMUNICATIONS - Methods and apparatuses are provided for adjusting a scheduled load for one or more user equipment (UE) in a wireless network. A comparison of each of one or more control parameters related to signals received from one or more UEs to a corresponding threshold can be determined. The control parameters can correspond to an in-cell load, rise-over-thermal, etc. The scheduled load of a base station can be adjusted based in part on the comparison. This adjustment can include adjusting the scheduled load by a step-size increase value or step-size decrease value, which can be computed based in part on a target tail probability for the one or more control parameters. | 06-20-2013 |
Manikandadas, Mathilakathu Madathil, Tempe, AZ US
Patent application number | Description | Published |
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20150274628 | MULTIFUNCTIONAL RADICAL QUENCHERS - The invention provides a compound of formula (I): [insert formula (I)] wherein X, Y, and R | 10-01-2015 |
Sankara Narayanan Ekkanath Madathil, Leicester GB
Patent application number | Description | Published |
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20090159928 | POWER SEMICONDUCTOR DEVICES - A power semiconductor device including source and drain regions located in a lateral arrangement in a first portion of the device, and at least one current providing cell located in a second portion of the device and spaced apart from the first portion at least by a substrate region of a first conductivity type. | 06-25-2009 |
20130221409 | SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG - A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted. | 08-29-2013 |
Vjesh Alanthatta Madathil, Mangalore IN
Patent application number | Description | Published |
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20140012001 | NOVEL POLYMORPHIC FORM OF RIFAXIMIN AND PROCESS FOR ITS PREPARATION - The present invention discloses a stable amorphous form of Rifaximin characterised by having X-ray powder diffraction pattern as given in FIG. | 01-09-2014 |