Patent application number | Description | Published |
20100201965 | Method and System for Improved Overlay Correction - A method for improving alignment in a photolithography machine is provided. The method comprises identifying first empirical alignment data that has been determined from use of a target photomask within at least one non-target tool, and identifying second empirical alignment data that has been determined from use of a non-target photomask within a target tool. The method continues by identifying third empirical alignment data that has been determined from use of a non-target photomask within at least one non-target tool, and calculating from the first, second, and third empirical alignment data a predicted alignment data for the target photomask with the target tool. The method then proceeds by aligning the target photomask within the target tool using the predicted alignment data, exposing a pattern from the target photomask onto the wafer in the target tool, and further processing the exposed wafer. | 08-12-2010 |
20110112678 | ADVANCED PROCESS CONTROL FOR NEW TAPEOUT PRODUCT - The present disclosure provides a semiconductor manufacturing method. The method includes providing product data of a product, the product data including a sensitive product parameter; searching existing products according to the sensitive product parameter to identify a relevant product from the existing products; determining an initial value of a processing model parameter to the product using corresponding data of the relevant product; assigning the initial value of the processing model parameter to a processing model associated with a manufacturing process; thereafter, tuning a processing recipe using the processing model; and performing the manufacturing process to a semiconductor wafer using the processing recipe. | 05-12-2011 |
20110238197 | DYNAMIC COMPENSATION IN ADVANCED PROCESS CONTROL - A method of semiconductor fabrication is provided. The method includes providing a model for a device parameter of a wafer as a function of first and second process parameters. The first and second process parameters correspond to different wafer characteristics, respectively. The method includes deriving target values of the first and second process parameters based on a specified target value of the device parameter. The method includes performing a first fabrication process in response to the target value of the first process parameter. The method includes measuring an actual value of the first process parameter thereafter. The method includes updating the model using the actual value of the first process parameter. The method includes deriving a revised target value of the second process parameter using the updated model. The method includes performing a second fabrication process in response to the revised target value of the second process parameter. | 09-29-2011 |
20120028174 | Defense System in Advanced Process Control - A method includes performing a lithography process on a wafer to form a patterned photo resist, and measuring the wafer to determine an overlay error of the patterned photo resist. A high/low specification is determined using the overlay error. An overlay process value setting is generated and compared with the high/low specification to determine whether the overlay process value setting is within a range defined by the high/low specification. | 02-02-2012 |
20140170782 | SCANNER OVERLAY CORRECTION SYSTEM AND METHOD - A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values. | 06-19-2014 |
20150016943 | Lithographic Overlay Sampling - Some embodiments of the present disclosure relate to a method of alignment which includes defining a plurality of fields on the face of a wafer, and organizing the plurality of fields into an orthogonal field structure and two or more continuous field structures. A first number of alignment structure positions are measured within each field of the two or more continuous field structures, and a second number of alignment structure positions are measured within each field of the orthogonal field structure, the second number being greater than the first number. The feature or layer is then aligned to the previously formed feature or layer based upon the measured alignment structure positions of the two or more continuous field structures and the orthogonal field structure. | 01-15-2015 |
20150027636 | SCANNER OVERLAY CORRECTION SYSTEM AND METHOD - A method includes performing a semiconductor fabrication process on a plurality of substrates. The plurality of substrates are divided into a first subset and a second subset. A rework process is performed on the second subset of the plurality of substrates but not on the first subset. A respective mean value of at least one exposure parameter for a lithography process is computed for each respective one of the first and second subsets of the plurality of substrates. A scanner overlay correction and a mean correction are applied to expose a second plurality of substrates on which the rework process has been performed. The mean correction is based on the computed mean values. | 01-29-2015 |