Loquet
Gerard Loquet, Fribourg CH
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20120016181 | Fully or Partially Implantable Hearing System - There is provided an at least partially implantable hearing system comprising a microphone assembly for capturing audio signals from ambient sound; an audio signal processing unit for processing the audio signals captured by the microphone assembly; an implantable main electromechanical output transducer for direct mechanical stimulation of the cochlea according to the audio signals processed by the audio signal processing unit; an implantable box having a central part and an open flange for penetrating through the cochlear wall into the perilymph fluid, wherein the inner cross section of the central part is larger than the inner cross section of the flange; and wherein the electromechanical output transducer is for acting on the perilymph fluid in the central part of the box through a port provided at the box. The box comprises at least one of a port for an implantable auxiliary electromechanical output transducer for acting on the perilymph fluid in the central part of the box, a port for drug application into the perilymph fluid in the central part of the box, a port for taking out perilymph fluid from the central part of the box, a port for applying optical stimuli to the perilymph fluid of the cochlea, and a port for at least one sensor for sensing at least physical or chemical parameter of the perilymph fluid in the central part of the box. | 01-19-2012 |
Gérard Loquet, Lausanne CH
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20130178855 | IMPLANTABLE HEARING AID AND SYSTEM AND METHOD FOR IMPLANTING THE SAME - An at least partially implantable hearing aid, having: a microphone arrangement ( | 07-11-2013 |
Gérard Loquet, Lausanne CH
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20130178855 | IMPLANTABLE HEARING AID AND SYSTEM AND METHOD FOR IMPLANTING THE SAME - An at least partially implantable hearing aid, having: a microphone arrangement ( | 07-11-2013 |
Richard Loquet, Hemet, CA US
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20140257416 | PERCUTANEOUS ROD INSERTER - An instrument for grasping an end of a spinal rod and percutaneous insertion of the spinal rod includes a curved housing, an immovable lip, a first slot, a pivoting lip, a slidable rod, and a threaded mechanism. The curved housing includes an interior channel extending from a proximal end to a distal end. The immovable lip extends from the distal end and the first slot is in a side wall of the distal end. The pivoting lip rotatably couples to the distal end opposite the immovable lip. The slidable rod is dispose within the interior channel and slidably coupled at a first end to the first slot and a second slot of the pivoting lip. The threaded mechanism is within a portion of the proximal end and rotatably engages with a second end of the slidable rod to translate the slidable rod within the interior channel to position the pivoting lip relative to the immovable lip. | 09-11-2014 |
Yannick Loquet, Domene FR
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20150162277 | ADVANCED INTERCONNECT WITH AIR GAP - Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of an air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the air gap is used as an insulator between adjacent metal lines, while a ULK film is retained to insulate vias. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer. | 06-11-2015 |
20150162278 | TRENCH INTERCONNECT HAVING REDUCED FRINGE CAPACITANCE - Ultra-low-k dielectric materials used as inter-layer dielectrics in high-performance integrated circuits are prone to be structurally unstable. The Young's modulus of such materials is decreased, resulting in porosity, poor film strength, cracking, and voids. An alternative dual damascene interconnect structure incorporates deep air gaps into a high modulus dielectric material to maintain structural stability while reducing capacitance between adjacent nanowires. Incorporation of a deep air gap having k=1.0 compensates for the use of a higher modulus film having a dielectric constant greater than the typical ultra-low-k (ULK) dielectric value of about 2.2. The higher modulus film containing the deep air gap is used as an insulator and a means of reducing fringe capacitance between adjacent metal lines. The dielectric layer between two adjacent metal lines thus forms a ULK/high-modulus dielectric bi-layer. | 06-11-2015 |
Yannick S. Loquet, Cohoes, NY US
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20150028491 | Improved SiCOH Hardmask with Graded Transition Layers - A structure and method for fabricating an improved SiCOH hardmask with graded transition layers having an improved profile for forming sub-20 nm back end of the line (BEOL) metallized interconnects are provided. In one embodiment, the improved hardmask may be comprised of five layers: an oxide adhesion layer, a graded transition layer, a dielectric layer, an inverse graded transition layer, and an oxide layer. In another embodiment, the improved hardmask may be comprised of four layers; an oxide adhesion layer, a graded transition layer, a dielectric layer, and an oxide layer. In another embodiment, a method of forming an improved hardmask may comprise a continuous five step plasma enhanced chemical vapor deposition (PECVD) process utilizing a silicon precursor, a porogen, and oxygen. In yet another embodiment, a method of forming an improved hardmask may comprise a continuous four step PECVD process utilizing a silicon precursor, a porogen, and oxygen. | 01-29-2015 |