Patent application number | Description | Published |
20140097447 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor device and method of manufacturing the semiconductor, including an n type buffer layer disposed on a first surface of an n+ type silicon carbide substrate, an n− type epitaxial layer disposed on the n type buffer layer, a first type of trench disposed on each side of a second type of trench, wherein the trenches are disposed in the n− type epitaxial layer, an n+ region disposed on the n− type epitaxial layer, a p+ region disposed in each first type of trench, a gate insulating layer disposed in the second trench, a gate material disposed on the gate insulating layer, an oxidation layer disposed on the gate material, a source electrode disposed on the n+ region, oxidation layer, and p+ region, and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate. | 04-10-2014 |
20140187004 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Disclosed is a method for fabricating a semiconductor device including: sequentially forming a first insulating film and a first barrier layer on a first surface of a substrate; etching the first barrier layer to form a first barrier layer pattern; etching the first insulating film to form a first insulating film pattern; removing the first barrier layer pattern and forming a first type epitaxial layer on an exposed first portion of the substrate; forming a second insulating film and a second barrier layer on the first type epitaxial layer and the first insulating film pattern; etching the second barrier layer to form a second barrier layer pattern; etching the second insulating film to form a second insulating film pattern, and etching the first insulating film pattern; and forming a second type epitaxial layer on an exposed second portion of the first surface of the n substrate. | 07-03-2014 |
20150079747 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device including sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench. | 03-19-2015 |
20150187725 | METHOD OF JOINING SILVER PASTE - A method of joining silver paste is provided that includes preparing silver paste including a plurality of silver powders and solid phase sintering medium materials capable of surrounding each silver powder. In addition, the method incldues heating the silver paste at an oxygen partial pressure that is greater than a level at an atmospheric pressure, and joining the silver powders. | 07-02-2015 |
20150187883 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; an n+ region disposed on the second n− type epitaxial layer; a trench passing through the second n− type epitaxial layer, the p type epitaxial layer, and the n+ region, and disposed on the first n− type epitaxial layer; a p+ region disposed on the p type epitaxial layer and separated from the trench; and a gate insulating layer positioned in the trench, in which channels are disposed in the second n− type epitaxial layer of both sides of the trench and the p type epitaxial layer of both sides of the trench. | 07-02-2015 |
20150187929 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n− type epitaxial layer. | 07-02-2015 |
20150187962 | SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME - A Schottky barrier diode includes: an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n− type epitaxial layer; an n type epitaxial layer disposed on the n− type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other. | 07-02-2015 |