Kuo-Hsuan
Kuo-Hsuan Chang, Taipei City TW
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20120128180 | Analog-to-Digital Converter and Analog-to-Digital Conversion Method - The invention provides an analog-to-digital converter. In one embodiment, the analog-to-digital converter receives a first audio signal from a microphone, and comprises a coding selection module, a pre-amplifier, a | 05-24-2012 |
20120128181 | Analog-to-Digital Converter, Sound Processing Device, and Method for Analog-to-Digital Conversion - The invention provides a sound processing device. In one embodiment, the sound processing device comprises a first microphone, a first analog-to-digital converter, a second microphone, and a second analog-to-digital converter. The first microphone detects a first sound pressure to generate a first analog audio signal. The first analog-to-digital converter converts the first analog audio signal to a first digital audio signal. The second microphone detects a second sound pressure to generate a second analog audio signal. The second analog-to-digital converter converts the second analog audio signal to a second digital audio signal, encodes a third digital audio signal according to the second digital audio signal, receives the first digital audio signal and a clock signal, outputs data bits of the third digital audio signal when the clock signal oscillates to a logic low level, and outputs data bits of the first digital audio signal when the clock signal oscillates to a logic high level. | 05-24-2012 |
Kuo-Hsuan Hsu, Taipei TW
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20130094218 | LED LENS AND LIGHT SOURCE DEVICE USING THE SAME - The present invention discloses an LED lens and a light source device using the same. The light source device includes the LED lens and a LED. The LED lens comprises a light incident surface, a light emitting surface, and a bottom surface. The light emitting surface includes a recession portion disposed at the central thereof and a convex portion connected to the recession portion. The light incident surface is a concave surface and comprises a first optically active area and a second optically active area. The first optically active area is disposed at the central of the light incident surface; the second optically active area is connected to the first optically active area and the bottom surface. At the junction between the first optically active area and the second optically active area, it is an optical path inversion point that is disposed satisfying specific condition. | 04-18-2013 |
20130155690 | LED LENS AND LIGHT EMITTING DEVICE USING THE SAME - An LED lens and a light emitting device using the same are disclosed. The LED lens comprises a light incident surface, a light emitting surface, and a bottom surface. The light emitting surface includes a first recession portion disposed at the central thereof and a protrusion portion connected to the outer periphery of the emitting recession portion. The light incident surface comprises a first optically active area and a second optically active area. The first optically active area is disposed at the central of the light incident surface, and has a second recession portion; the second optically active area is a concave surface connected to the first optically active area. The LED lens satisfies specific conditions. The LED lens distributes a light beam emitted from the light emitting device to form an even light pattern. | 06-20-2013 |
Kuo-Hsuan Hung, Hsinchu TW
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20160077281 | VARIABLE OPTICAL ATTENUATOR WITH WAVELENGTH-DEPENDENT LOSS COMPENSATION - A variable optical attenuator with wavelength-dependent loss compensation is provided, including: an optical fiber pigtail comprising at least a first waveguide and a second waveguide; a lens being disposed between the optical fiber pigtail and a reflector for focusing an emitted light from the first waveguide and returning a reflected light from the reflector to the second waveguide of the optical fiber pigtail; and the reflector being disposed at the focus of the lens to reflect the emitted light from the first waveguide passing the lens, and the reflected light passing through the lens to return to the second waveguide, the reflector having an initial position with a normal forming a pre-tilt angle with the axis of lens in the incident plane defined by the two axes, and the reflector tilting towards a larger tilt angle when an attenuation value increasing. | 03-17-2016 |
Kuo-Hsuan Liao, Hsinchu TW
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20130173981 | NON-BINARY QC-LDPC CODE DECODING DEVICE AND ASSOCIATED METHOD - A non-binary quasi-cyclic (QC) low-density parity-check (LDPC) code decoding device comprises a first barrel-shifter, a routing network and a second barrel-shifter. The first barrel-shifter uses a constraint h′v′+h″v″=hv to shift q−1 elements of an input by j | 07-04-2013 |
Kuo-Hsuan Lo, Zhubei City TW
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20140045313 | HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF - The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a first conductive type substrate in which isolation regions are formed for defining a device region; agate formed on the first conductive type substrate; a source and a drain formed in the device region and located at both sides of the gate respectively, and doped with second conductive type impurities; a second conductive type well, which is formed in the first conductive type substrate, and surrounds the drain from top view; and a first deep trench isolation structure, which is formed in the first conductive type substrate, and is located in the second conductive type well between the source and the drain from top view, wherein the depth of the first deep trench isolation structure is deeper than the second conductive type well from the cross-sectional view. | 02-13-2014 |
Kuo-Hsuan Lo, Taoyuan TW
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20150364460 | TRANSIENT VOLTAGE SUPPRESSION DEVICE AND MANUFACTURING METHOD THEREOF - The present invention discloses a transient voltage suppression (TVS) device and a manufacturing method thereof. The TVS device limits a voltage drop between two terminals thereof not to exceed a clamp voltage. The TVS device is formed in a stack substrate including a semiconductor substrate, a P-type first epitaxial layer, and a second epitaxial layer stacked in sequence. In the TVS device, a first PN diode is connected to a Zener diode in series, wherein the series circuit is surrounded by a first shallow trench isolation (STI) region; and a second PN diode is connected in parallel to the series circuit, wherein the second PN diode is surrounded by a second STI region. The first STI region and the second STI region both extend from an upper surface to the second epitaxial layer, but not to the first epitaxial layer. | 12-17-2015 |