Patent application number | Description | Published |
20080214021 | METHOD OF CRYSTALLIZING SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - It is an object of the present invention to align the plane orientations of crystal grains of a semiconductor film crystallized by irradiation with a linear laser beam with a width of less than or equal to 5 μm. By performing irradiation with the linear laser beam condensed by an aspheric cylindrical lens or a gradient index lens to completely melt the semiconductor film and scanning the linear laser beam, the completely melted semiconductor film is made to grow laterally. Because the linear beam is very narrow, the width of the semiconductor which is in a liquid state is also narrow, so the occurrence of turbulent flow in the liquid semiconductor is suppressed. Therefore, growth directions of adjacent crystal grains do not become disordered due to turbulent flow and are unformalized, and thus the plane orientations of the laterally grown crystal grains can be aligned. | 09-04-2008 |
20080223838 | Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device - The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movement of the movable table, and a computer, in which the timer starts measuring time when the sensor senses passage of the movable table, and when the movable table does not pass the sensor even after the movement period, conduction between contacts of the interlock provided in the timer is blocked to operate the interlock in the laser oscillator, thereby stopping laser output. The invention also relates to a laser treatment method using the laser treatment apparatus. | 09-18-2008 |
20080227232 | Method for manufacturing display device - An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween. | 09-18-2008 |
20080267245 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device - The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide. | 10-30-2008 |
20080299744 | Manufacturing method of semiconductor substrate and semiconductor device - It is an object of the present invention to obtain a large-sized SOI substrate by providing a single-crystal silicon layer over a large-sized glass substrate in a large area. After a plurality of rectangular single-crystal semiconductor substrates each provided with a separation layer are aligned over a dummy substrate and both of the substrates are fixed with a low-temperature coagulant, the plurality of single-crystal semiconductor substrates are bonded to a support substrate; the temperature is raised up to a temperature, at which the low-temperature coagulant does not to have a bonding effect, so as to isolate the dummy substrate and the single-crystal semiconductor substrates; heat treatment is performed to separate part of the single-crystal semiconductor substrates, along a boundary of the respective separation layers; and single-crystal semiconductor layers are provided over the support substrate. | 12-04-2008 |
20080315350 | Method for manufacturing semiconductor substrate, and semiconductor device - It is an object to form single-crystalline semiconductor layers with high mobility over approximately the entire surface of a glass substrate even when the glass substrate is increased in size. A first single-crystalline semiconductor substrate is bonded to a substrate having an insulating surface, the first single-crystalline semiconductor substrate is separated such that a first single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface, a second single-crystalline semiconductor substrate is bonded to the substrate having an insulating surface so as to overlap with at least part of the first single-crystalline semiconductor layer provided over the substrate having an insulating surface, and the second single-crystalline semiconductor substrate is separated such that a second single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface. | 12-25-2008 |
20080318398 | Method for manufacturing crystalline semiconductor film and semiconductor device - There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 μm to 10 μm, preferably, 1 μm to 5 μm; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region. | 12-25-2008 |
20090004823 | Manufacturing method of semiconductor - A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first. | 01-01-2009 |
20090017581 | Method for manufacturing a semiconductor device - A single-crystal semiconductor layer is provided in a large area over a large-sized glass substrate, whereby a large-scale SOI substrate is obtained. A single-crystal semiconductor substrate provided with an embrittlement layer and a dummy substrate are bonded to each other, and the single-crystal semiconductor substrate is separated at the embrittlement layer as a boundary by heat treatment to form a piece of single-crystal semiconductor over the dummy substrate. The dummy substrate is divided to form a piece of single-crystal semiconductor. The piece of single-crystal semiconductor is bonded to a supporting substrate, and the piece of single-crystal semiconductor is separated from the dummy substrate. Then, a plurality of pieces of single-crystal semiconductor are arranged and transferred to the large-sized glass substrate. | 01-15-2009 |
20090017598 | Method of manufacturing semiconductor device - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 01-15-2009 |
20090047771 | Manufacturing method and manufacturing apparatus of semiconductor device - To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}. | 02-19-2009 |
20090111247 | FORMATION METHOD OF SINGLE CRYSTAL SEMICONDUCTOR LAYER, FORMATION METHOD OF CRYSTALLINE SEMICONDUCTOR LAYER, FORMATION METHOD OF POLYCRYSTALLINE LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for forming a single crystal semiconductor layer in which a first porous layer and a second porous layer are formed over a single crystal semiconductor ingot, a groove is formed in a part of the second porous layer and a single crystal semiconductor layer is formed over the second porous layer, the single crystal semiconductor ingot is attached onto a large insulating substrate, water jet is directed to the interface between the first porous layer and the second porous layer, and the single crystal semiconductor layer is attached to the large insulating substrate, or a method for forming a crystalline semiconductor layer in which a crystalline semiconductor ingot is irradiated with hydrogen ions to form a hydrogen ion irradiation region in the crystalline semiconductor ingot, the crystalline semiconductor ingot is rolled over the large insulating substrate while being heated, the crystalline semiconductor layer is separated from the hydrogen ion irradiation region, and the crystalline semiconductor layer is attached to the large insulating substrate. | 04-30-2009 |
20090127477 | Laser irradiation apparatus and laser irradiation method - A laser beam having homogeneous intensity distribution is delivered without causing interference stripes of a laser to appear on an irradiation surface. A laser beam emitted from a laser oscillator passes through a diffractive optical element so that the intensity distribution thereof is homogenized. The beam emitted from the diffractive optical element then passes through a slit so that low-intensity end portions in a major-axis direction of the beam are blocked. Subsequently, the beam passes through a projecting lens and a condensing lens, so that an image of the slit is projected onto the irradiation surface. The projecting lens is provided so that the slit and the irradiation surface are conjugated. Thus, the irradiation surface can be irradiated with the laser having homogeneous intensity while preventing the diffraction by the slit. | 05-21-2009 |
20090166563 | Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device - An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed. | 07-02-2009 |
20090191694 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE - A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer. | 07-30-2009 |
20090197017 | Deposition Method and Method for Manufacturing Light-Emitting Device - A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate. | 08-06-2009 |
20090209086 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Highly reliable single crystal semiconductor layers and semiconductor devices can be obtained through a fewer manufacturing steps. A method for manufacturing a semiconductor device is proposed. A single crystal semiconductor substrate provided with an insulating film is irradiated with an ion beam to form a damaged region in the single crystal semiconductor substrate; liquid glass is floated over a liquid denser than the liquid glass to shape the liquid glass into a plate; the single crystal semiconductor substrate provided with the damaged region is placed over the plate-like liquid glass so that the insulating film and the liquid glass face each other; the plate-like liquid glass and the single crystal semiconductor substrate are cooled slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together; and a single crystal semiconductor layer is separated from the single crystal semiconductor substrate along the damaged region. | 08-20-2009 |
20090220706 | Film-Formation Method and Manufacturing Method of Light-Emitting Device - A film-formation method whereby a minute pattern thin film can be formed on a deposition substrate, without provision of a mask between a material and the deposition substrate. Moreover, a light-emitting element is formed by such a film-formation method, and a high-definition light-emitting device can be manufactured. Through a film-formation substrate in which a reflective layer, a light-absorbing layer and a material layer are formed, the light-absorbing layer is irradiated with light, so that a material contained in the material layer is deposited on a deposition substrate which is disposed to face the film-formation substrate. Since the reflective layer is selectively formed, a film to be deposited on the deposition substrate can be selectively formed with a minute pattern reflecting the pattern of the reflective layer. A wet process can be employed for formation of the material layer. | 09-03-2009 |
20090258167 | Film Deposition Method and Method for Manufacturing Light-Emitting Element - It is an object to provide a technique that enables transfer by laser irradiation without unevenness while a high degree of vacuum is maintained in the space between a substrate provided with a material layer and a transfer receiving substrate. The present invention relates to a deposition method including the following steps: making a first substrate that has a light-transmitting property and has a light absorption layer and a material layer having a light-emitting material face a second substrate; placing the second substrate facing the first substrate in an inner space of a vacuum jig; reducing pressure in the inner space of the vacuum jig; and emitting a laser beam to a second surface which is a surface on a side opposite to the first surface of the first substrate, and transferring the material layer in a region irradiated with the laser beam to the second substrate. In addition, the present invention relates to a method for manufacturing a light-emitting element using the deposition method. | 10-15-2009 |
20090279179 | DEPOSITION DONOR SUBSTRATE AND DEPOSITION METHOD USING THE SAME - A lens array is formed on one surface of a deposition donor substrate and a light absorption layer is formed on the other surface; a material layer is formed in contact with the light absorption layer; the surface of the deposition donor substrate on which the material layer is formed and a deposition target surface of a deposition target substrate are disposed to face each other; and at least part of the light absorption layer is selectively irradiated with light from the side of the deposition donor substrate, on which the lens array is provided, to heat the material layer in a region overlapped by the region irradiated with the light in the light absorption layer, thereby performing deposition to the deposition target surface of the deposition target substrate. | 11-12-2009 |
20090291569 | LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS - The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface. | 11-26-2009 |
20090297694 | Deposition Method and Method for Manufacturing Light-Emitting Device - An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation. | 12-03-2009 |
20090305483 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - One surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate. An insulating layer is formed over the one surface of the single crystal semiconductor substrate. A surface of a substrate having an insulating surface and a surface of the insulating layer are disposed in contact with each other to bond the substrate having the insulating surface and the single crystal semiconductor substrate to each other. Heat treatment is performed to divide the single crystal semiconductor substrate along the damaged region and to form a semiconductor layer over the substrate having the insulating surface. One surface of the semiconductor layer is irradiated with light from a flash lamp under conditions where the semiconductor layer is not melted, to repair a defect. | 12-10-2009 |
20100035371 | Method for Fabricating Light Emitting Device - By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate. | 02-11-2010 |
20100048036 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS - It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration. | 02-25-2010 |
20100098879 | Method for Manufacturing Light-Emitting Device - A method for manufacturing a light-emitting device is provided, which includes a step of forming a light-absorbing layer including an unevenness portion over a first substrate, a step of forming a first organic compound layer over the light-absorbing layer, a step of providing a second substrate over the first substrate with the light-absorbing layer and the first organic compound layer interposed therebetween, and a step of irradiating the light-absorbing layer with light to deposit a second organic compound layer including a material contained in the first organic compound layer onto the second substrate. | 04-22-2010 |
20100143610 | Film Formation Method and Method for Manufacturing Light-Emitting Element - There is a problem in a method for forming an EL layer by heating with light and transferring an organic material in that the organic material is not uniformly transferred. The present invention relates to a film formation method including the steps of forming a metal film over a first surface of an elastic substrate; forming an organic material layer onto a second surface of the elastic substrate which is opposite to the first surface; placing the second surface of the elastic substrate and a substrate on which a film is to be formed, with a space between the second surface of the elastic substrate and the substrate on which a film is to be formed; heating locally and rapidly the metal film from a first surface side of the elastic substrate to deform the elastic substrate by expansion of the metal film; and transferring the organic material layer from the elastic substrate onto the substrate on which a film is to be formed. | 06-10-2010 |
20100151762 | Deposition Method and Manufacturing Method of Light-Emitting Device - An object is to provide a deposition method in which an organic material layer which is a material of a common layer is evenly formed over an entire surface of a donor substrate (a first substrate) and can be transferred to an element formation substrate (a second substrate) as transfer layers which are common layers for red (R), green (G), and blue (B) with different thicknesses. An organic material layer over a first absorption layer and a second absorption layer is deposited to a second substrate as a first transfer layer and a second transfer layer by sublimating the organic material layer over the first substrate. The thicknesses of the first and second transfer layers differ in accordance with the ratio of the area of the first absorption layer to the area of the second absorption layer. | 06-17-2010 |
20100207040 | LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME - When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position. | 08-19-2010 |
20100219413 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - An object is to provide a method for manufacturing a highly-reliable semiconductor device with an improved material use efficiency and with a simplified manufacturing process. The method includes the steps of forming a conductive layer over a substrate, forming a light-transmitting layer over the conductive layer, and selectively removing the conductive layer and the light-transmitting layer by irradiation with a femtosecond laser beam from above the light-transmitting layer. Note that the conductive layer and the light-transmitting layer may be removed so that an end portion of the light-transmitting layer is located on an inner side than an end portion of the conductive layer. Before the irradiation with a femtosecond laser beam, a surface of the light-transmitting layer may be subjected to liquid-repellent treatment. | 09-02-2010 |
20100237354 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light. | 09-23-2010 |
20100248405 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 09-30-2010 |
20100267179 | Method for Manufacturing Semiconductor Device - A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape. | 10-21-2010 |
20100267216 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 10-21-2010 |
20100301026 | Manufacturing Method of Semiconductor Device and Laser Processing Apparatus - In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other. | 12-02-2010 |
20100301415 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE - It is an object to form single-crystalline semiconductor layers with high mobility over approximately the entire surface of a glass substrate even when the glass substrate is increased in size. A first single-crystalline semiconductor substrate is bonded to a substrate having an insulating surface, the first single-crystalline semiconductor substrate is separated such that a first single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface, a second single-crystalline semiconductor substrate is bonded to the substrate having an insulating surface so as to overlap with at least part of the first single-crystalline semiconductor layer provided over the substrate having an insulating surface, and the second single-crystalline semiconductor substrate is separated such that a second single-crystalline semiconductor layer is left remaining over the substrate having an insulating surface. | 12-02-2010 |
20100326970 | Manufacturing Apparatus of Semiconductor Device and Method for Manufacturing Semiconductor Device - To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device. | 12-30-2010 |
20110024406 | LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS - An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laser oscillator | 02-03-2011 |
20110027918 | INSPECTION METHOD AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE - In a light-emitting element provided with a thick layer of a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a portion which a conductive foreign substance enters between the pair of electrodes emits stronger light at a voltage lower than a voltage required when a normal portion starts emitting light. In a light-emitting element provided with a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a voltage may be applied thereto in the forward direction. Then, an abnormal light-emission portion may be detected because the portion emits light at a luminance of 1 (cd/m | 02-03-2011 |
20110062855 | Lighting Device - One object is to provide a lighting device having a large irradiation range at low cost. One object is to provide a lighting device with improved light extraction efficiency at low cost. The lighting device includes a light-transmitting base, a first light-transmitting electrode formed over almost the whole area of a surface of the light-transmitting base, an EL layer over the first light-transmitting electrode, and a second electrode over the EL layer. The light-transmitting base has a cylindrical shape, a conical shape, a prismatic shape, or a pyramidal shape whose bottom surface is the surface of the light-transmitting base. | 03-17-2011 |
20110151593 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE - A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer. | 06-23-2011 |
20110170198 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide. | 07-14-2011 |
20110183500 | MANUFACTURING METHOD OF MEMORY ELEMENT, LASER IRRADIATION APPARATUS, AND LASER IRRADIATION METHOD - A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film. | 07-28-2011 |
20110201183 | METHOD FOR MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region. | 08-18-2011 |
20110245958 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE - To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}. | 10-06-2011 |
20110255172 | LASER IRRADIATION APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens. | 10-20-2011 |
20110300690 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 12-08-2011 |
20110304920 | LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS - The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface. | 12-15-2011 |
20120028391 | METHOD OF FABRICATING DISPLAY DEVICE - To improve the use efficiency of materials and provide a technique of fabricating a display device by a simple process. The method includes the steps of providing a mask on a conductive layer, forming an insulating film over the conductive layer provided with the mask, removing the mask to form an insulating layer having an opening; and forming a conductive film in the opening so as to be in contact with the exposed conductive layer, whereby the conductive layer and the conductive film can be electrically connected through the insulating layer. The shape of the opening reflects the shape of the mask. A mask having a columnar shape (e.g., a prism, a cylinder, or a triangular prism), a needle shape, or the like can be used. | 02-02-2012 |
20120088324 | Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device - An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed. | 04-12-2012 |
20120126277 | Light-Emitting Element, Manufacturing Method Thereof, and Lighting Device - A light-emitting element includes a conductive layer functioning as a first electrode, an electroluminescent layer, and a conductive layer functioning as a second electrode, and further includes an insulating material filling a defect portion in the electroluminescent layer so that the defect portion is sealed. In the light-emitting element, the conductive layer functioning as a second electrode overlaps with the conductive layer functioning as a first electrode with the electroluminescent layer and the insulating material interposed therebetween and is in contact with a top surface of the electroluminescent layer. | 05-24-2012 |
20120152314 | PHOTOELECTRIC CONVERSION DEVICE - The present invention provides a photoelectric conversion device. Specifically, the photoelectric conversion device has a structure in which a substrate including a photoelectric conversion element provided at the bottom and a substrate including a photoelectric conversion element provided at the side are secured in a brace form by a light-dividing device. This structure divides incident light using the light-dividing device into a plurality of wavelength bands, and causes the divided light to fall onto the photoelectric conversion elements provided at the bottom and side, thereby making it possible to provide a photoelectric conversion device which is capable of generating a lame amount of electric power. In addition, the light-dividing device distributes pressures and impacts applied to the substrates at the bottom and side, thus making it possible to provide a photoelectric conversion device which has resistance to pressures and impacts. | 06-21-2012 |
20120153333 | Light-Emitting Device and Lighting Device - A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side. | 06-21-2012 |
20120153416 | PHOTOELECTRIC CONVERSION ELEMENT - An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided. | 06-21-2012 |
20120161130 | ELECTRODE, PHOTOELECTRIC CONVERSION DEVICE USING THE ELECTRODE, AND MANUFACTURING METHOD THEREOF - A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained. | 06-28-2012 |
20120196388 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND MANUFACTURING APPARATUS OF LIGHT-EMITTING DEVICE - An object is to provide a method for manufacturing a light-emitting device in which a defective portion is insulated. In addition, another object is to provide a manufacturing apparatus of a light-emitting device in which a defective portion is insulated. After a hemispherical lens is formed to overlap with a light-emitting element, the defective portion is detected. Then, the hemispherical lens overlapping with the light-emitting element including the detected defective portion may be irradiated with a laser beam having a low energy density, and the defective portion may be insulated by light condensed through the hemispherical lens. | 08-02-2012 |
20120206036 | Lighting Device - The lighting device includes a layer containing a light-emitting organic compound which is provided over a substrate; a first barrier layer covering the layer containing a light-emitting organic compound; a second barrier layer provided over the first barrier layer; a sealant provided between the first barrier layer and the second barrier layer; a resin layer including a desiccant which is surrounded by the first barrier layer, the second barrier layer, and the sealant; and a resin substrate which is provided over the second barrier layer and has a first uneven structure on a surface in contact with the second barrier layer and a second uneven structure on a surface in contact with the air, and the second uneven structure has a larger height difference than the first uneven structure. | 08-16-2012 |
20120206923 | Optical Element, Light-Emitting Device, Lighting Device, and Method for Manufacturing Optical Element - An optical element comprises an organic resin and bubbles distributed to have a number density increasing from a first plane of the optical element toward a second plane of the optical element, where a diameter of the bubbles is less than or equal to a wavelength of light which enters the optical element. At least one of the first plane and the second plane may have an uneven structure. | 08-16-2012 |
20120223350 | Light-Emitting Device, Lighting Device, Substrate, and Manufacturing Method of Substrate - To provide a substrate which is light and has high reliability and high light extraction efficiency from an organic EL element. To provide a substrate which includes a protective layer in a resin layer, an uneven structure on a light incident surface, and an opening which surrounds the uneven structure and through which the protective layer is exposed. To provide a light-emitting device which includes a resin layer provided with an uneven structure on a light incident surface over a protective layer, and a light-emitting element in the protective layer and a counter substrate which are bonded with a sealant. The protective layer and the resin layer have a property of transmitting visible light. The light-emitting element includes a light-transmitting first electrode over a resin layer, a layer containing a light-transmitting organic compound over the first electrode, and a second electrode over the layer containing a light-transmitting organic compound. | 09-06-2012 |
20120228481 | LENS SHEET AND PHOTOELECTRIC CONVERSION MODULE - A lens sheet is provided which is configured to create, below the lens sheet, a region not irradiated with light when light is incident on the lens sheet from above. A photoelectric conversion element is efficiently irradiated with light incident on the lens sheet. In addition, a high-efficiency photoelectric conversion module is provided. The lens sheet includes a light-transmitting substrate having lens arrays on both sides, and the lens arrays each have lens regions and non-lens regions placed alternately (in stripes), in which an end portion of each lens region on the front side overlaps with an end portion of each lens region on the back side. | 09-13-2012 |
20120262940 | Light Guide Element, Backlight Unit, and Display Device - An object is to provide a novel structure of a backlight unit using color-scan backlight drive, which can relieve a color mixture problem. A backlight unit including a plurality of light guide elements is used. The light guide element has a shape extended in the x direction. The light guide element has a shape of rectangular column. Grooves are provided on a bottom surface of the light guide element so as to traverse it in the y direction. Light sources are provided at the ends of the light guide element in the x direction to supply light into the light guide element. Light supplied into the light guide element is reflected by the grooves in the z direction, and emitted to the outside of the light guide element through the top surface. A reflective layer may be provided under the bottom surface of the light guide element. | 10-18-2012 |
20120285200 | Method for Manufacturing Glass Sealed Body and Method for Manufacturing Light-Emitting Device - In a method for manufacturing a glass sealed body, a paste including powdered glass and a binder is discharged from an outlet whose shape is a closed curve to fowl a partition whose shape is a closed curve over a first glass substrate; the partition is heated so that the binder is volatilized and the powdered glass is fused to be a frit glass; and the frit glass and a second glass substrate are heated while disposing in close contact with each other, so that the frit glass and the second glass substrate are welded together to form a closed space by the frit glass, the first glass substrate, and the second glass substrate. A light-emitting element is sealed with the glass sealed body, so that the sealing is hardly broken even when impact or external force is applied. | 11-15-2012 |
20130020932 | Lighting Device - One object is to provide a lighting device having a large irradiation range at low cost. One object is to provide a lighting device with improved light extraction efficiency at low cost. The lighting device includes a light-transmitting base, a first light-transmitting electrode formed over almost the whole area of a surface of the light-transmitting base, an EL layer over the first light-transmitting electrode, and a second electrode over the EL layer. The light-transmitting base has a cylindrical shape, a conical shape, a prismatic shape, or a pyramidal shape whose bottom surface is the surface of the light-transmitting base. | 01-24-2013 |
20130084691 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide. | 04-04-2013 |