Patent application number | Description | Published |
20130181159 | SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME - A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass. | 07-18-2013 |
20130183826 | COMPOSITION FOR POLISHING AND COMPOSITION FOR RINSING - A polishing composition for a silicon wafer and a rinsing composition for a silicon wafer according to the present invention contain a nonionic surfactant of a polyoxyethylene adduct. The HLB value of the polyoxyethylene adduct is 8 to 15. The weight-average molecular weight of the polyoxyethylene adduct is 1400 or less. The average number of moles of oxyethylene added in the polyoxyethylene adduct is 13 or less. The content of the polyoxyethylene adduct in each of the polishing composition and the rinsing composition is 0.00001 to 0.1% by mass. | 07-18-2013 |
20130302984 | POLISHING COMPOSITION, POLISHING METHOD USING SAME, AND SUBSTRATE PRODUCTION METHOD - Provided is a polishing composition characterized by: including at least one of either organic acid or organic salt and including a composition (A) including hydroxyethyl cellulose, ammonia, abrasive grains, and water. The electrical conductivity of the polishing composition is 1.2 to 8 times the electrical conductivity of the composition (A). The polishing composition is mainly used in substrate surface polishing applications. | 11-14-2013 |
20140302752 | COMPOSITION FOR POLISHING PURPOSES, POLISHING METHOD USING SAME, AND METHOD FOR PRODUCING SUBSTRATE - Provided is a polishing composition, which comprises abrasive grains, a water-soluble polymer, an aggregation inhibitor and water. The ratio R1/R2 is 1.3 or less, where R1 represents the average particle diameter of the particles present in the polishing composition and R2 represents the average particle diameter of the abrasive grains when the abrasive grains are dispersed in water at the same concentration as that of the abrasive grains in the polishing composition. The polishing composition can be used mainly for polishing the surface of a silicon substrate. | 10-09-2014 |
20150056122 | POLISHING COMPOSITION, MANUFACTURING PROCESS THEREFOR, PROCESS FOR PRODUCTION OF SILICON SUBSTRATE, AND SILICON SUBSTRATE - A polishing composition is composed of a filtered diluted liquid obtained through an undiluted liquid-preparing step, an undiluted liquid-filtering step, a diluting step, and a diluted liquid-filtering step. In the undiluted liquid-preparing step, an undiluted liquid is prepared by mixing raw materials for the polishing composition. In the undiluted liquid-filtering step, the undiluted liquid is filtered. In the diluting step, the filtered undiluted liquid is diluted to obtain a diluted liquid. In the diluted liquid-filtering step, the diluted liquid is filtered. The polishing composition is used, for example, for polishing a silicon substrate material to produce a silicon substrate. | 02-26-2015 |
20150079789 | ABRASIVE COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE - The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A. | 03-19-2015 |
20150210891 | POLISHING COMPOSITION, METHOD FOR MANUFACTURING POLISHING COMPOSITION, AND METHOD FOR MANUFACTURING POLISHING COMPOSITION LIQUID CONCENTRATE - A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more. | 07-30-2015 |
20150210892 | POLISHING COMPOSITION AND METHOD FOR PRODUCING SUBSTRATE - A polishing composition includes a water-soluble polymer having a weight average molecular weight of 1000000 or less and a molecular weight distribution represented by weight average molecular weight (Mw)/number average molecular weight (Mn) that is less than 5.0. The polishing composition is mainly used in an application for polishing a substrate, preferably in an application for performing final polishing on a substrate. | 07-30-2015 |