Kogoi
Hisao Kogoi, Toyama-Shi JP
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20110044888 | FINE PARTICULATE TITANIUM DIOXIDE, AND PRODUCTION PROCESS AND USE THEREOF - A process for producing a fine particulate titanium dioxide, comprising charging a fine particulate titanium dioxide powder in a resin bag, spraying water droplets having a liquid droplet diameter of 5 to 500 μm to the powder in the bag, and closing the bag for storing the powder in the bag. | 02-24-2011 |
Hisao Kogoi, Chichibu-Shi JP
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20100028240 | PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL - A method for producing an SiC single crystal comprises providing a low temperature region and a high temperature region in a crystal growth crucible ( | 02-04-2010 |
20100092366 | WATER-BASED POLISHING SLURRY FOR POLISHING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, AND POLISHING METHOD FOR THE SAME - A water-based polishing slurry for polishing a silicon carbide single crystal, wherein the slurry comprises abrasive particles having a mean particle size of 1 to 400 nm and an inorganic acid, and the slurry has a pH of less than 2 at 20° C. | 04-15-2010 |
20110111171 | SEED CRYSTAL FOR SILICON CARBIDE SINGLE CRYSTAL GROWTH, METHOD FOR PRODUCING THE SEED CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SINGLE CRYSTAL - A seed crystal for silicon carbide single crystal growth ( | 05-12-2011 |
Hisao Kogoi, Toyama JP
Patent application number | Description | Published |
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20080260625 | Fine Particulate Titanium Dioxide, and Production Process and Use Thereof - A high-purity ultrafine particulate titanium dioxide with a reduced fluctuation of the adsorbed water content which is a large mass fluctuation factor in a fine particulate powder body, is provided. The fine particulate titanium dioxide has a BET specific surface area of 10 to 200 m | 10-23-2008 |
20090188701 | Inorganic powder, resin composition filled with the powder and use thereof - The present invention relates to an inorganic powder having a frequency-size distribution with multiple peaks, wherein the peaks are present at least in the particle size regions from 0.2 to 2 μm and from 2 to 63 μm, preferably with the maximum particle size being 63 μm or less, the average particle size being from 4 to 30 μm, and the mode size being from 2 to 35 μm. The inorganic powder of the present invention is useful as a filler for a high thermally conductive member in electronic component-mounted circuit board required to have electrical insulating property and heat radiating performance, in that a heat radiating member comprising the powder can have thermal conductivity, the powder can provide a resin composition having excellent withstand voltage characteristics for forming an insulative composition into a thin film and can be filled in the resin composition at a high density so as to improve heat radiating performance of the resin composition. | 07-30-2009 |
Hisao Kogoi, Hikone-Shi JP
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20120234231 | PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS - The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a silicon carbide seed crystal by supplying a sublimed gas of a silicon carbide source material to the silicon carbide seed crystal arranged on a pedestal, wherein a spacing member composed of silicon carbide is arranged between the pedestal and the silicon carbide seed crystal, the spacing member is non-adhesively held on the pedestal by a supporting member, the silicon carbide seed crystal is adhered to the surface of the spacing member on the opposite side of the pedestal, and the spacing member and the supporting member are relatively arranged so that the adhesive surface of the spacing member adhered with the silicon carbide seed crystal is separated by | 09-20-2012 |
20130000547 | METHOD FOR FIXING SILICON CARBIDE SEED CRYSTAL AND METHOD FOR PRODUCING SINGLE CRYSTAL SILICON CARBIDE - The object of the present invention is to provide a method for fixing a silicon carbide seed crystal and a method for producing a silicon carbide single crystal which can produce a silicon carbide single crystal having high quality and no penetration defects, and the present invention provides a method for fixing a silicon carbide seed crystal on a pedestal including: a step of mirror polishing a surface of a pedestal on which a silicon carbide seed crystal is to be fixed; a step of irradiating atoms or ions to at least one of a seed crystal-side surface of the pedestal on which the silicon carbide seed crystal is to be fixed and a pedestal side-surface of the silicon carbide seed crystal which is to be fixed on the pedestal, in a vacuum; and a step of directly connecting the seed crystal side-surface of the pedestal and the pedestal side-surface of the silicon carbide seed crystal by bringing them into close contact and applying pressure to them in a vacuum. | 01-03-2013 |