Patent application number | Description | Published |
20090004780 | Method for Fabricating Semiconductor Chip - After a film layer | 01-01-2009 |
20090023295 | Manufacturing method for semiconductor chips - By performing plasma etching on the second surface of a semiconductor wafer on the first surface of which an insulating film is placed in dividing regions and on the second surface of which a mask for defining the dividing regions are placed, the second surface being located opposite from the first surface, the insulating film is exposed from an etching bottom portion by removing portions that correspond to the dividing regions. Subsequently, by continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma, corner portions put in contact with the insulating film are removed. Subsequently, by removing the mask and thereafter performing plasma etching on the second surface, corner portions located on the second surface side are removed. | 01-22-2009 |
20090057838 | Manufacturing Method for Semiconductor Chips, and Semiconductor Chip - In a manufacturing method for performing plasma etching on a second surface of a semiconductor wafer that has a first surface where an insulating film is placed in dividing regions and the second surface which is opposite from the first surface and on which a mask for defining the dividing regions is placed thereby exposing the insulating film from etching bottom portions by removing portions that correspond to the dividing regions and subsequently continuously performing the plasma etching in the state in which the exposed surfaces of the insulating film are charged with electric charge due to ions in the plasma thereby removing corner portions put in contact with the insulating film in the device-formation-regions, isotropic etching is performed on the semiconductor wafer at any timing. | 03-05-2009 |
20090093104 | MANUFACTURING METHOD FOR SEMICONDUCTOR CHIPS - By forming dividing-groove portions in accordance with dividing regions on the second surface of a semiconductor wafer where an insulating film is placed in the dividing regions of the first surface and performing etching of the entire second surface and the surfaces of the dividing-groove portions by performing plasma etching from the second surface, corner portions on the second surface side are removed, while the insulating film is exposed from the etching bottom portion by removing the dividing-groove portions in the dividing regions. And by continuously performing the plasma etching in a state in which the exposed insulating film is surface charged with electric charge due to ions in plasma, corner portions on the first surface side put in contact with the insulating film are removed, and semiconductor chips that have a high transverse rupture strength are provided. | 04-09-2009 |
20090145359 | Gas Shower Plate for Palsma Processing Apparatus - In a plasma processing apparatus for generating a plasma in a plasma generation space between a lower electrode and an upper electrode so that a processing object mounted on the lower electrode is subjected to plasma processing, a plurality of cutout portions for absorption of strain caused by thermal expansion due to rapid temperature increases in the plasma processing are formed at an equal pitch in an outer edge portion of a gas shower plate included in the upper electrode. Thus, the gas shower plate can be prevented from being damaged by occurrence of cracks in the outer edge portion of the gas shower plate or the like. | 06-11-2009 |
20090197393 | Method for dividing semiconductor wafer and manufacturing method for semiconductor devices - In a semiconductor wafer including a plurality of imaginary-divided-regions which are partitioned by imaginary-dividing-lines that are respectively arranged in a grid-like arrangement on the semiconductor wafer and a circumferential line that is the outer periphery outline of the semiconductor wafer, a mask is placed so as to expose an entirety of surfaces of the wafer corresponding to respective removal-regions, the removal-regions being regions in approximately triangular form partitioned by the circumferential line of the wafer and the imaginary-dividing-lines and being some of the imaginary-divided-regions, and then plasma etching is performed on a mask placement-side surface, by which the semiconductor wafer is divided into the individual semiconductor devices along dividing lines while portions correspond to the removal-regions in the wafer are removed. | 08-06-2009 |
20090209087 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES - In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles. | 08-20-2009 |
20090266488 | Plasma Processing Apparatus - A plasma processing apparatus includes a stage which is a lower electrode, an upper electrode which is a counter electrode for the lower electrode, and a processing chamber in which the lower and the upper electrodes are placed. The apparatus supplies a gas to a plasma generation space located between the lower and the upper electrodes to generate a plasma so that a processing object is subjected to plasma processing. In the apparatus, the upper electrode is formed up of a body portion having a gas supply port, a gas-permeable porous plate located on the underside of the body portion so as to close the gas supply port, and a support member for supporting the outer edge portion of the porous plate. Slits for absorption of strain due to thermal expansion in the plasma processing are formed at a pitch in the outer edge portion of the porous plate. | 10-29-2009 |
20100022071 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIP - An object is to provide a semiconductor chip manufacturing method capable of removing test patterns in a higher efficiency in simple steps, while a general-purpose characteristic can be secured. | 01-28-2010 |
20100048001 | PLASMA DICING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS - A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber. | 02-25-2010 |
20100055875 | METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER - In a laser processing step S | 03-04-2010 |
20100132890 | PLASMA PROCESSING DEVICE AND PLASMA DISCHARGE STATE MONITORING DEVICE - An object is to provide a plasma processing device capable of highly accurately monitoring an operation state including whether or not the plasma discharge is executed, whether the discharge is normal or abnormal and whether or not the maintenance work of the vacuum chamber is necessary. | 06-03-2010 |
20100163182 | PLASMA PROCESSING DEVICE - An object is to provide a plasma processing device capable of accurately judging whether or not the proper maintenance time has come which is necessary for maintaining an operation state of a device in the best condition. | 07-01-2010 |
20100173474 | METHOD OF MANUFACTURING SEMICONDUCTOR CHIP - In a method in which a semiconductor wafer | 07-08-2010 |
20100176085 | PLASMA PROCESSING DEVICE AND METHOD OF MONITORING PLASMA DISCHARGE STATE IN PLASMA PROCESSING DEVICE - An object is to provide a plasma processing device capable of rightly monitoring existence of plasma discharge and also rightly monitoring existence of abnormal discharge. Another object of the present invention is to provide a method of monitoring a state of plasma discharge in the plasma processing device. | 07-15-2010 |
20100197115 | METHOD OF SEGMENTING SEMICONDUCTOR WAFER - To provide a method of segmenting a semiconductor wafer, which is capable of preventing chippings. | 08-05-2010 |