Patent application number | Description | Published |
20110095185 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 04-28-2011 |
20110303844 | ELECTRON MICROSCOPE, AND SPECIMEN HOLDING METHOD - It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction. | 12-15-2011 |
20120070066 | CHARGED PARTICLE BEAM DEVICE AND EVALUATION METHOD USING THE CHARGED PARTICLE BEAM DEVICE - The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude. | 03-22-2012 |
20120256087 | Scanning Electron Microscope - There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set. | 10-11-2012 |
20120261589 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 10-18-2012 |
20130327939 | SEMICONDUCTOR INSPECTING APPARATUS - In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam. | 12-12-2013 |
20140042338 | STAGE APPARATUS AND CHARGED PARTICLE BEAM APPARATUS - A stage apparatus includes a column for irradiating a sample with a charged particle beam, a vacuum sample chamber to which the column is attached, moving tables disposed in the vacuum sample chamber to move the sample relatively to the column, and position detectors for detecting positions of the moving tables. The stage apparatus includes an attachment member disposed between the column and the vacuum sample chamber. The attachment member has an opening which restricts movement of the column in a same direction as directions of the moving tables. Reference mirrors in the position detectors for detecting the positions of the tables are attached to the attachment member. Each of the reference mirrors has an adjustment apparatus to adjust a relative angle between the reference mirror and the laser beam. | 02-13-2014 |
Patent application number | Description | Published |
20100161885 | SEMICONDUCTOR STORAGE DEVICE AND STORAGE CONTROLLING METHOD - A semiconductor storage device includes a first storage unit having a plurality of first blocks as data write regions; an instructing unit that issues a write instruction of writing data into the first blocks; a converting unit that converts an external address of input data to a memory position in the first block with reference to a conversion table in which external addresses of the data are associated with the memory positions of the data in the first blocks; and a judging unit that judges whether any of the first blocks store valid data associated with the external address based on the memory positions of the input data, wherein the instructing unit issues the write instruction of writing the data into the first block in which the valid data is not stored, when any of the first blocks does not store the valid data. | 06-24-2010 |
20100313084 | SEMICONDUCTOR STORAGE DEVICE - As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value. | 12-09-2010 |
20120030528 | SEMICONDUCTOR STORAGE DEVICE - As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value. | 02-02-2012 |
20120239992 | METHOD OF CONTROLLING A SEMICONDUCTOR STORAGE DEVICE - A method of controlling a nonvolatile semiconductor memory including a plurality of blocks, each one of the plurality of blocks being a unit of data erasing, includes determining a monitored block as a candidate for refresh operation from among the plurality of blocks based on a predetermined condition. The method includes monitoring an error count of data stored in the monitored block and not monitoring an error count of data stored in blocks excluding the monitored block among the plurality of blocks. The method also includes performing the refresh operation on data stored in the monitored block in which the error count is larger than a first threshold value. | 09-20-2012 |
20140040664 | METHOD OF CONTROLLING A SEMICONDUCTOR STORAGE DEVICE - A method of controlling a nonvolatile semiconductor memory includes patrolling a first pool including a plurality of blocks/units with a first frequency, and when a first block/unit in the first pool satisfies a first condition, assigning the first block/unit to a second pool. The method includes patrolling the second pool with a second frequency, the second frequency being higher than the first frequency, and when a second block/unit in the second pool satisfies a second condition, moving data stored in the second block/unit to a free block/unit. | 02-06-2014 |
20140304567 | METHOD OF CONTROLLING A SEMICONDUCTOR STORAGE DEVICE - A method of controlling a nonvolatile semiconductor memory includes checking a first group at a first interval period, the first group including a plurality of blocks, and when a first block in the first group satisfies a first condition, assigning the first block to a second group. The method includes checking, at a second interval period, an error count of data stored in the second group, and when a second block in the second group satisfies a second condition, moving data stored in the second block to an erased block in which stored data is erased among the plurality of blocks. | 10-09-2014 |
Patent application number | Description | Published |
20120282493 | GLASS SUBSTRATE FOR A MAGNETIC DISK, MAGNETIC DISK AND METHOD OF MANUFACTURING A MAGNETIC DISK - A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less. | 11-08-2012 |
20140085750 | GLASS SUBSTRATE FOR A MAGNETIC DISK, MAGNETIC DISK AND METHOD OF MANUFACTURING A MAGNETIC DISK - A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less. | 03-27-2014 |
20140220386 | SUBSTRATE FOR MAGNETIC DISK AND MAGNETIC DISK - The shape and number of surface defects are controlled so that the occurrence of failure is suppressed in an HDD device in which a magnetic head with a very small flying height, such as a DFH head, is mounted. | 08-07-2014 |
Patent application number | Description | Published |
20090324870 | Utraviolet-curable composition for optical disk and optical disk - By using an ultraviolet-curable composition, which contains a specific ultraviolet-curable compound obtained by modifying a bisphenol epoxy compound with a polyester having a flexible structure, as a light transmission layer. Accordingly, the present invention achieves an optical disk having excellent characteristics such as excellent durability, excellent light resistance and excellently reduced warp, while suppressing deterioration of the light reflection film due to environment of high temperature and high humidity or light exposure. Consequently the ultraviolet-curable composition of the present invention is most suitable for optical disks having a thick light-transmitting layer on which recording/reproduction is performed by using a blue laser. | 12-31-2009 |
20100086725 | ULTRAVIOLET-CURABLE COMPOSITION FOR OPTICAL DISK INTERMEDIATE LAYER AND OPTICAL DISK - An ultraviolet-curable composition for an optical disk intermediate layer includes a urethane(meth)acrylate (a) having three or more radical-polymerizable unsaturated bonds, a (meth)acrylate (b) having four or more radical-polymerizable unsaturated bonds which is other than the urethane(meth)acrylate (a), and a monofunctional alicyclic(meth)acrylate (c), wherein a B-type viscosity of the composition at 25° C. is not more than 1,000 mPa·s. The ultraviolet-curable composition may be used for producing the intermediate layers of optical disks by using a general-purpose resin such as a polycarbonate used as a stamper. | 04-08-2010 |
20110033650 | ULTRAVIOLET-CURABLE COMPOSITION FOR LIGHT-TRANSMISSION LAYER AND OPTICAL DISK - An ultraviolet-curable composition of the present invention includes epoxy(meth)acrylate, urethane(meth)acrylate, and a silicone compound represented by formula (1): | 02-10-2011 |