Patent application number | Description | Published |
20110104907 | METHODS OF FORMING A METAL SILICATE LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE METAL SILICATE LAYER - Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure. | 05-05-2011 |
20110227143 | INTEGRATED CIRCUIT DEVICES INCLUDING COMPLEX DIELECTRIC LAYERS AND RELATED FABRICATION METHODS - An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed. | 09-22-2011 |
20120075823 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A display panel and a method of manufacturing the same are provided. The display panel includes a plurality of chip panels, each chip panel having an upper surface, a lower surface disposed parallel to the upper surface, a side surface between the upper surface and the lower surface and a connection portion between the side surface and at least one of the upper surface and the lower surface, the connection portion having a rounded configuration, and an adhesive layer interposed between the chip panels in order to vertically stack the chip panels to connect the chip panels. Therefore, in the display panel, the strength of the edge portion can be improved. Also, by forming a connection portion, a stress can be suppressed from being concentrated at the edge portion by an external mechanical stress. | 03-29-2012 |
20120188114 | MULTI-LAYERED ELECTROMAGNETIC WAVE ABSORBER AND MANUFACTURING METHOD THEREOF - A multi layer electromagnetic wave absorber is provided. The absorber includes a surface layer comprising at least one of a dielectric lossy mixture and a magnetic lossy mixture, an absorption layer, laminated on a rear side of the surface layer, comprising: a dielectric lossy mixture having a higher loss than the dielectric lossy mixture for the surface layer, and a magnetic lossy mixture having a higher loss than the magnetic lossy mixture for the surface layer, and a boundary layer, laminated on a rear side of the absorption layer, comprising a conductive material. | 07-26-2012 |
20130027115 | METHOD FOR CONTROLLING TEMPERATURE OF TERMINAL AND TERMINAL SUPPORTING THE SAME - A method for controlling a temperature of a terminal and a terminal supporting the same are provided. A terminal supporting temperature control includes a temperature sensor for detecting a temperature of the terminal, and a controller for performing at least one of a first throttle procedure including driving the controller with a first preset driving frequency when the temperature of the terminal detected by the temperature sensor is a first preset temperature, and driving the controller with a second driving frequency higher than the first driving frequency when the temperature of the terminal is reduced to a second preset temperature lower than the first preset temperature, and a second throttle procedure including driving the controller with the first preset driving frequency for a first time, and driving the controller with the second driving frequency higher than the first driving frequency for a second time after the first time elapses. | 01-31-2013 |
20140256112 | Semiconductor Devices and Methods of Fabricating the Same - Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers. | 09-11-2014 |
20140327062 | ELECTRONIC DEVICES INCLUDING OXIDE DIELECTRIC AND INTERFACE LAYERS - An electronic device may include a substrate, an oxide dielectric layer on the substrate, an interface layer on the oxide dielectric layer, and an electrode on the interface layer. The oxide dielectric layer may include an aluminum oxide layer between first and second zirconium oxide layers. The interface layer may have a first formation enthalpy, and the oxide dielectric layer may be between the substrate and the interface layer. The electrode may have a second formation enthalpy higher than the first formation enthalpy, and the interface layer may be between the oxide dielectric layer and the electrode. | 11-06-2014 |
20150243727 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers. | 08-27-2015 |