Ki Se
Ki Se Kim, Gyeonggi-Do KR
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20130200387 | NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride based heterojunction semiconductor device includes a GaN layer on a substrate, an Al-doped GaN layer on the GaN layer, an AlGaN layer on the Al-doped GaN layer, a source electrode, a gate electrode, and a drain electrode on the AlGaN layer, a first field plate on the AlGaN layer, the first field plate being in contact with the gate electrode, and a second field plate on the AlGaN layer, the second field plate being separated from the first field plate by a distance. | 08-08-2013 |
Ki Se Kim, Seosan-Si KR
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20150155449 | LIGHT CONVERSION LIGHT-EMITTING DEVICE WITH ENHANCED LIGHT LUMINESCENCE EFFICIENCY USING ANISOTROPIC METAL NANOPARTICLES - There is provided a light-emitting device with enhanced luminescence efficiency, which simultaneously exhibits excitation enhancement and emission enhancement of a light-emitting material by controlling two or multiple surface plasmon resonance bands of anisotropic metal nanoparticles to be formed in a near ultraviolet light range and a visible light range and optimizing overlapping of a wavelength of a near ultraviolet or blue light source with an absorption wavelength and an emission wavelength of the light-emitting material. There is also provided a light-emitting device with improved color gamut and luminance, which simultaneously exhibit emission enhancement of different types of light-emitting materials by controlling two or multiple surfaces plasmon resonance bands of anisotropic metal nanoparticles to be overlapped with absorption and emission wavelengths of two or more light-emitting materials having different emission wavelengths from one another. | 06-04-2015 |
Ki Se Lee, Gyeonggi-Do KR
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20100258188 | Thin Film Type Solar Cell and Method for Manufacturing the Same - A thin film type solar cell and a method for manufacturing the same is disclosed, which the thin film type solar cell comprises a front electrode, a semiconductor layer, and a rear electrode sequentially deposited on a substrate; and a buffer layer between the substrate and the front electrode so as to enhance an adhesive strength between the substrate and the front electrode, and to improve transmittance of solar ray incident through the substrate. | 10-14-2010 |
Ki Se Lee, Seoul KR
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20140288622 | TIP STRUCTURE FOR A SKIN CARE APPARATUS - Disclosed therein is a tip structure for a skin care apparatus. The tip structure includes a first electrode formed on a substrate mounted on the front end part of a tip case and a second electrode formed on the periphery of the front end part of the tip case so as to provide a wide electrode area. The tip structure for the skin care apparatus, which supplies high frequency energy to the skin through electrodes formed at the front end portion of the tip case, includes: a first electrode formed on the substrate mounted on the front end part of the tip case; and a second electrode formed on a peripheral portion of the front end part of the tip case. | 09-25-2014 |