Patent application number | Description | Published |
20100045179 | DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION METHOD THEREOF - There are provided a display apparatus which can be stably driven for a long period of time and can display an image with high definition and less image defect, and a production method thereof. The display apparatus includes a light-emitting layer, a pair of electrodes sandwiching the light-emitting layer, a transistor with an active layer for driving the light-emitting layer through the pair of the electrodes, and a matrix wiring portion having a scanning electrode line, a signal electrode line, and a first insulating layer, wherein the active layer includes an oxide which contains In and Zn and at least a part of which is amorphous, and wherein a second insulating layer containing hydrogen in an amount of less than 3×10 | 02-25-2010 |
20100053041 | PIXEL CIRCUIT, LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF - A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ. | 03-04-2010 |
20100059751 | THIN-FILM TRANSISTOR AND PROCESS FOR ITS FABRICATION - A bottom gate type thin-film transistor constituted of at least a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode. At an interface between the gate electrode and the gate insulating layer, the interface has a difference between hill tops and dale bottoms of unevenness in the vertical direction, of 30 nm or less. | 03-11-2010 |
20100244022 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING SAME - A first gate electrode ( | 09-30-2010 |
20110049509 | THIN FILM TRANSISTOR, DISPLAY DEVICE USING THIN FILM TRANSISTOR, AND PRODUCTION METHOD OF THIN FILM TRANSISTOR - Provided is a thin film transistor including: a first gate electrode; a first gate insulating layer covering the first gate electrode; a semiconductor layer on the first gate insulating layer; a second gate insulating layer on the semiconductor layer; a second gate electrode on the second gate insulating layer; and a drain electrode and a source electrode electrically connected to the semiconductor layer, in which: the semiconductor layer is an amorphous oxide semiconductor containing at least one of Zn, Ga, In, and Sn; the first gate electrode shields light entering the semiconductor layer from below, and the second gate electrode shields light entering the semiconductor layer from above; and the second gate electrode is electrically connected to the first gate electrode by penetrating the first gate insulating layer and the second gate insulating layer, to thereby shield light entering the semiconductor layer from at least one of sides thereof. | 03-03-2011 |
20120142131 | METHOD OF MANUFACTURING DISPLAY APPARATUS - Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes forming a transparent anode electrode for applying a charge to an emission layer, forming a first coating layer and a second coating layer on the transparent anode electrode, removing the first coating layer by etching using the second coating layer as a mask, and forming a layer including the emission layer on a part of the transparent anode electrode from which the first coating layer is removed. A surface of the transparent anode electrode becomes as clean as a surface cleaned with ultraviolet irradiation. | 06-07-2012 |
20120168749 | DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION THEREOF - A transistor includes a source terminal and a drain terminal, an active layer including an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. At least a part of the active layer is amorphous, and an electric current flowing between the source terminal and the drain terminal of the transistor is less than 10 μA when the transistor is in an off state. In addition, the gate insulating layer contains hydrogen in an amount of less than 3×10 | 07-05-2012 |
20130141494 | LIQUID DISCHARGE HEAD AND LIQUID DISCHARGE DEVICE - A liquid discharge head, contains: an energy generating element which generates thermal energy and contains a heat generation resistant layer and a pair of electrode layers whose end surfaces are separated from each other; an insulating layer covering the pair of electrode layers and the heat generation resistant layer and containing an insulating material; a protective layer provided above the insulating layer at least at a position corresponding to the energy generating element and containing a metal material containing iridium or ruthenium; and a covering layer provided at a position covering at least portions of the protective layer corresponding to the end surfaces of the pair of electrode layers in such a manner that a part of the protective layer is exposed and containing a metal material containing tantalum or niobium. | 06-06-2013 |
20140218439 | LIQUID DISCHARGE DEVICE AND CLEANING METHOD FOR LIQUID DISCHARGE HEAD - A liquid discharge device includes a liquid discharge head including a discharge port surface on which discharge ports for discharging liquid are formed, an electrothermal conversion element configured to generate energy for discharging liquid from the discharge ports, and a protection film configured to cover at least the electrothermal conversion element, and a cap configured to cover the discharge port surface, wherein the cap is arranged along the discharge port surface at a position opposite to the protection film via the discharge ports in a state where the cap covers the discharge port surface, and wherein the cap includes an electrode configured to be used to apply voltage between the protection film and the electrode. | 08-07-2014 |
20140300669 | LIQUID DISCHARGE HEAD, CLEANING METHOD FOR LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, AND SUBSTRATE FOR LIQUID DISCHARGE HEAD - A substrate for a liquid discharge head includes an upper protection film that covers at least a region corresponding to each of thermal energy generation elements. The upper protection film and at least one of the upper protection films adjacent to the upper protection film within a liquid chamber are respectively connected to different external electrodes, and a voltage can be applied therebetween via the different external electrodes. | 10-09-2014 |
20140318976 | REPRODUCTION METHOD OF LIQUID EJECTING HEAD - A reproduction method of a liquid ejecting head including: a process of filling the flow path with an electrolyte solution containing metal, and filling a space between an electrode capable of applying a voltage to between itself and the upper protective film and the upper protective film with the electrolyte solution; and a process of applying a voltage to between the upper protective film and the electrode to make the metal contained in the electrolyte solution deposit on the surface of the upper protective film. | 10-30-2014 |
20140368581 | LIQUID EJECTION HEAD SUBSTRATE AND LIQUID EJECTION HEAD - A liquid ejection head substrate includes a substrate, an element disposed on the substrate that generates thermal energy used for ejecting liquid, and a protective layer disposed at least at a position corresponding to the element. The protective layer contains iridium and has a density in the range of 21.0 g/cm | 12-18-2014 |
20150029267 | LIQUID EJECTING HEAD, SUBSTRATE FOR LIQUID EJECTING HEAD, AND PRINTING APPARATUS - A print head includes upper protective members located at positions corresponding to heat generating resistor elements to protect the heat generating resistor elements, and further, a part of the protective member being eluted to ink when a current flows inside in a state in which the ink is reserved in the pressure chambers. The print head includes a drive element and a logic circuit capable of allowing a current to independently flow in each of the upper protective layers so as to elute a part of the upper protective layer, in which the current flows, to the ink. | 01-29-2015 |