Patent application number | Description | Published |
20090166678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 07-02-2009 |
20090315075 | SEMICONDUCTOR DEVICE - A semiconductor device is, constituted by: a nitride group semiconductor functional layer which includes a first nitride group semiconductor region, a second nitride group semiconductor region provided on the first nitride group semiconductor region by a hetero junction, and a two-dimensional carrier gas channel near the hetero junction of the first nitride group semiconductor region; a first main electrode and a second main electrode connected to the two-dimensional carrier gas channel by ohmic contact; and a gate electrode disposed between the first main electrode and the second main electrode. The nitride group semiconductor region has different thicknesses between the second main electrode and the gate electrode, and between the first main electrode and the gate electrode. | 12-24-2009 |
20100052015 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first compound semiconductor layer having a two-dimensional carrier gas channel, a second compound semiconductor layer which functions as a barrier layer and is arranged above the first compound semiconductor layer, a first main electrode connected to one end of the two-dimensional carrier gas channel, and a second main electrode connected to another end of the two-dimensional carrier gas channel, these ends being separated, wherein a compound ratio of an elemental compound of the second compound semiconductor layer is different in a direction of the two-dimensional carrier gas channel between the first main electrode and the second main electrode. | 03-04-2010 |
20100123139 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - An aspect of the present invention inheres in a semiconductor wafer includes a support substrate, a first nitride semiconductor layer, at least an upper surface of which has become monocrystalline, the first semiconductor layer being provided on the support substrate, and a second nitride semiconductor layer containing nitrogen and gallium, the second nitride semiconductor layer being provided on the upper surface of the first nitride semiconductor layer. | 05-20-2010 |
20100123169 | COMPOUND SEMICONDUCTOR SUBSTRATE AND DEVICE THEREWITH - A semiconductor device is formed on a semiconductor substrate, which is comprised of: a base substrate; and a multilayer being formed on the base substrate and having a surface serving for an interface with the semiconductor device, the multilayer including alternating layers of a first compound semiconductor and a second compound semiconductor materially distinguishable from the first compound semiconductor, one selected from the group consisting of the first compound semiconductor and the second compound semiconductor being doped with one selected from the group consisting of carbon and transition elements. | 05-20-2010 |
20100193842 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device | 08-05-2010 |
20100237387 | SEMICONDUCTOR WAFER, SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF - A semiconductor wafer includes a substrate, a buffer region formed on one main surface of the substrate and formed from a compound semiconductor, and a main semiconductor region formed in the buffer region and formed from a compound semiconductor, wherein the buffer region includes a first multi-layer structured buffer region and a second multi-layer structured buffer region stacked with a plurality of alternating first layers and second layers, and a single layer structured buffer region arranged between the first multi-layer structured buffer region and the second multi-layer structured buffer region, the first layer is formed from a compound semiconductor which has a lattice constant smaller than a lattice constant of a material which forms the substrate, the second layer is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the substrate and a lattice constant of a material which forms the first layer, and wherein the single layer structured buffer region is thicker than the first layer and the second layer, and is formed from a compound semiconductor which has a lattice constant between a lattice constant of a material which forms the first layer and a lattice constant of a material which forms the second layer. | 09-23-2010 |
20100244096 | SEMICONDUCTOR DEVICE - A device includes a substrate; a buffer layer; and a device formation layer, wherein the buffer layer is formed by sequentially stacking, a plurality of times, a first nitride-based semiconductor layer made of a material having a lattice constant lower than a lattice constant of a material of the substrate; a first composition graded layer made of a material having a lattice constant gradually higher than the lattice constant of the first nitride-based semiconductor layer in a thickness direction; a second nitride-based semiconductor layer made of a material having a lattice constant higher than the lattice constant of the first nitride-based semiconductor layer; and a second composition graded layer made of a material having a lattice constant gradually lower than the lattice constant of the second nitride-based semiconductor layer in the thickness direction, and the second composition graded layer is thicker than the first composition graded layer. | 09-30-2010 |
20110006308 | SEMICONDUCTOR DEVICE - To obtain a device in which a buffer leak on a GaN substrate is reduced. | 01-13-2011 |
20110042787 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - To suppress adverse affect caused by dopant in a conductive semiconductor layer in a GaN-based device having a structure in which the conductive semiconductor layer is inserted between a substrate and an active layer. | 02-24-2011 |
20110095337 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device reduces the on-resistance and, at the same time, raises the breakdown voltage. The drain electrode | 04-28-2011 |
20110127604 | SEMICONDUCTOR DEVICE - A semiconductor device having a field plate structure shows a high electric field relaxation effect. The semiconductor device comprises a nitride semiconductor layer formed on a substrate, a source electrode formed so as to electrically contact the nitride semiconductor layer, a drain electrode formed so as to electrically contact the nitride semiconductor layer, a gate electrode formed between the source electrode and the drain electrode on the nitride semiconductor layer, a cap layer formed between the gate electrode and the drain electrode on the surface of the nitride semiconductor layer, a passivation layer covering the cap layer and a field plate formed as part of the gate electrode on the layer formed by the cap layer and the passivation layer, the cap layer being made of a composition containing part of the composition of the material of the nitride semiconductor layer and having a thickness of 2 to 50 nm, the end of the cap layer at the side of the gate electrode being provided with a taper angle of not greater than 60° to form a slope. | 06-02-2011 |
20110265708 | METHOD OF HETEROEPITAXY - Epitaxy is carried out by immersing a single crystal substrate having a first principal surface, a second principal surface and a dislocation exposed on the first principal surface into an electrolytic solution including a cation of a metal having a melting point; carrying out electrolytic plating on the first principal surface to deposit the metal on the dislocation so as to cover the dislocation with the metal but leave a portion of the first principal surface where the dislocation is exposed uncovered with the metal; and causing epitaxy of a semiconductor layer on both the portion of the first principal surface and the metal covering the dislocation at a temperature below the melting point. | 11-03-2011 |