Patent application number | Description | Published |
20100029065 | METHOD AND APPARATUS FOR PRODUCING GROUP III NITRIDE - A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other. | 02-04-2010 |
20100093124 | METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL - There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE. | 04-15-2010 |
20100215987 | Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof - In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction. | 08-26-2010 |
20100320462 | N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF - This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. | 12-23-2010 |
20110018104 | METHOD FOR PRODUCING A LAMINATED BODY HAVING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL LAYER, LAMINATED BODY PRODUCED BY THE METHOD, METHOD FOR PRODUCING Al-BASED GROUP-III NITRIDE SINGLE CRYSTAL SUBSTRATE EMPLOYING THE LAMINATED BODY, AND ALUMINUM NITRIDE SINGLE CRYSTAL SUBSTRATE - The present invention is a method for producing a laminated body, comprising the steps of: (1) preparing a base substrate having a surface formed of a single crystal which is different from the material constituting the Al-based group-III nitride single crystal layer to be formed; (2) forming an Al-based group-III nitride single crystal layer having a thickness of 10 nm to 1.5 μm on the single crystal surface of the prepared base substrate; (3) forming on the Al-based group-III nitride single crystal layer a non-single crystal layer being 100 times or more thicker than the Al-based group-III nitride single crystal layer without breaking the previously-obtained Al-based group-III nitride single crystal layer; and (4) removing the base substrate. The method provides a substrate which can be suitably used as a base substrate for producing an Al-based group-III nitride single crystal self-supporting substrate, of which surface is formed of a single crystal of an Al-based group-III nitride, and which is free from cracking and warpage. | 01-27-2011 |
20110094438 | LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF - The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature. | 04-28-2011 |
Patent application number | Description | Published |
20110016264 | METHOD AND APPARATUS FOR CACHE CONTROL IN A DATA STORAGE DEVICE - According to one embodiment, a data storage device is provided, which has a cache controller that performs cache control, by using a buffer memory divided into segments, which are managed. The cache controller performs sequential hit judge on each segment, in accordance with the requested access range designated by a read or write command coming from a host system. The cache controller updates the hit upper-limit LBA set for each segment if the result of the hit judge is a mishit. | 01-20-2011 |
20110022774 | CACHE MEMORY CONTROL METHOD, AND INFORMATION STORAGE DEVICE COMPRISING CACHE MEMORY - According to a cache memory control method of an embodiment, a data write position in a segment of a cache memory is changed to an address to which a lower bit of a logical block address of write data is added as an offset. Then, even if writing is completed within the segment of the cache memory, the remaining regions of the segment is not wasted. | 01-27-2011 |
20110167203 | METHOD AND APPARATUS FOR CACHE CONTROL IN A DATA STORAGE DEVICE - According to one embodiment, a data storage device is provided, which has a cache controller that performs cache control, by using a buffer memory divided into segments, which are managed. The cache controller performs sequential hit judge on each segment, in accordance with the requested access range designated by a read or write command coming from a host system. The cache controller updates the hit upper-limit LBA set for each segment if the result of the hit judge is a mishit. | 07-07-2011 |
20110264948 | DISK STORAGE APPARATUS AND METHOD FOR RECOVERING DATA - According to one embodiment, a disk storage apparatus includes a write module, an operation module, and a controller. The write module is configured to write data, in units of blocks, in a designated write area of a disk. The operation module is configured to perform an exclusive OR operation on the blocks of data. The controller is configured to control the write module, causing the write module to write, in a designated block, recovery data that is a result of the exclusive OR operation on all data blocks written in the designated write area. | 10-27-2011 |
20140201427 | STORAGE CONTROL APPARATUS, DATA STORAGE APPARATUS AND METHOD FOR STORAGE CONTROL - According to one embodiment, a storage control apparatus includes a first buffer controller and a second buffer controller. The first buffer controller is configured to store data of a first unit in each of data buffer regions, and the data of the first unit is transmitted from a host and written in a nonvolatile memory, or read from the nonvolatile memory and transmitted to the host. The second buffer controller is configured to independently transmit data of a second unit from the data buffer region corresponding to a bank prepared for transmission when data is written in the nonvolatile memory, and to independently transmit data of the second unit from a bank to be read to the data buffer region corresponding to the bank to be read when data is transmitted to the host. | 07-17-2014 |
Patent application number | Description | Published |
20110128981 | P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT - This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by Al | 06-02-2011 |
20120127604 | MAGNETIC RECORDING APPARATUS AND DATA READING METHOD - A magnetic recording apparatus includes: a magnetic disk; a drive device; a magnetic disk control device; a buffer; and a flag management table. The buffer reads data of a specific block unit from a designated read range on the magnetic disk. The flag management table stores a pointer indicating the read location of the buffer for data of each of the block units and a management flag for the pointer. The magnetic disk control device sets the management flag of the pointer corresponding to a given block unit when the data of the given block unit is read to the buffer. | 05-24-2012 |
20120183809 | Production Method of a Layered Body - A production method of a layered body having a single crystal layer including a group III nitride having a composition Al | 07-19-2012 |
20120223329 | Production Method of a Layered Body - Disclosed is a novel method for group III polarity growth on a sapphire substrate. Specifically disclosed is a method for producing a laminate wherein a group III nitride single crystal layer is laminated on a sapphire substrate by an MOCVD method. The method for producing a laminate comprises: a pretreatment step in which an oxygen source gas is supplied onto the sapphire substrate; a first growth step in which an initial single crystal layer that contains oxygen at a concentration of 5×10 | 09-06-2012 |
20120240845 | PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL - Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that,
| 09-27-2012 |
20130214325 | Method for Manufacturing Optical Element - A method for manufacturing an optical element includes a step wherein an aluminum nitride single crystal layer is formed on an aluminum nitride seed substrate having an aluminum nitride single crystal surface as the topmost surface. A laminated body for an optical element is manufactured by forming an optical element layer on the aluminum nitride single crystal layer, and the aluminum nitride seed substrate is removed from the laminated body. An optical element having, as a substrate, an aluminum nitride single crystal layer having a high ultraviolet transmittance and a low dislocation density is provided. | 08-22-2013 |
Patent application number | Description | Published |
20160027469 | MAGNETIC DISK APPARATUS, CONTROLLER AND DATA PROCESSING METHOD - According to one embodiment, a magnetic disk apparatus includes an RW channel with an internal memory for processing data to be read/written from/to a magnetic disk, a transfer controller for controlling data transfer between a host apparatus and the RW channel, and a processor for controlling the RW channel and transfer controller. The processor reads, from the magnetic disk, predetermined area data including to-be-rewritten data, subjects the read predetermined area data to error correction processing in the RW channel, and stores resultant data in the internal memory. The processor rewrites, with rewrite data from the host apparatus, the to-be-rewritten data of the predetermined area data stored in the internal memory to update the predetermined area data, adds an error correction code to the updated data in the RW channel module, and writes resultant data to the magnetic disk. | 01-28-2016 |
20160111126 | MAGNETIC DISK APPARATUS AND METHOD FOR ACCESSING DATA SECTOR - A magnetic disk apparatus includes a disk and a controller. The disk includes a plurality of tracks including a first track and a second track that is different from the first track. A plurality of data sectors are located on the tracks. The data sectors include short data sectors and long data sectors, each including a plurality of short data sectors. If the controller accesses a long data sector located at an end of the first track, the controller first accesses a short data sector of the long data sector at the end of the first track, and then accesses a short data sector of the long data sector at the beginning of the second track. | 04-21-2016 |