Patent application number | Description | Published |
20120043714 | Sheet Conveying Device - A sheet conveying device to convey a sheet in a sheet path is provided. The sheet conveying device includes a separator roller, which is arranged to be rotatably in contact with the sheet to apply conveying force to the sheet, a pad assembly including a separator pad, which is arranged to be in contact with the sheet stack to apply convey resistance to the sheet stack, and a holder, which is swingably attached to a base member and holds the separator pad, the base member being in a fixed position with respect to the separator roller, a spring, which urges the pad assembly toward the separator roller, and a slidable member, which is attached to the pad assembly to be integrally movable with the pad assembly and to be slidably in contact with a first slidable section in the base member. | 02-23-2012 |
20120274021 | Image Forming Apparatus - An image forming apparatus including an image forming unit, a discharger, and a presser including a swingable member and a contact member is provided. The contact member is partially attached to the swingable member in a condition to create clearance between an unattached part and the swingable member. Weights of the contact member and the swingable member affect the sheet when the recording medium contacts the contact member and the contact member is moved to swing upward along with the swingable member by the recording medium. Resilient force is provided by the contact member to affect the recording medium when the recording medium contacts the contact member and the contact member is moved in a direction to narrow the clearance. | 11-01-2012 |
Patent application number | Description | Published |
20140084333 | POWER SEMICONDUCTOR DEVICE - In general, according to one embodiment, a power semiconductor device includes a first, a second, a third, a fourth, and a fifth electrode, and a first, a second, a third, and a fourth semiconductor layer. The first electrode includes a first and a second face. The first semiconductor layer is provided on a side of the first face of the first electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The fourth semiconductor layer is provided on the third semiconductor layer. The second electrode is electrically connected to the fourth semiconductor layer. The third and fourth electrode are provided at the second semiconductor layer and the third semiconductor layer with an insulating film interposed. The fifth electrode is provided between the third electrode and the fourth electrode with an insulating film interposed. | 03-27-2014 |
20140084334 | POWER SEMICONDUCTOR DEVICE - According to one embodiment, a power semiconductor device includes first and second electrodes, first, second, third, and fourth semiconductor layers, a first control electrode, and a first insulating film. The first semiconductor layer is provided on the first electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the first semiconductor layer to be separated from the second semiconductor layer. The fourth semiconductor layer is provided on the third semiconductor layer. The second electrode is provided on the fourth semiconductor layer. The first control electrode is provided between the second and third semiconductor layers to be shifted toward the third semiconductor layer. The first insulating film is provided between the first semiconductor layer and the first control electrode, between the second semiconductor layer and the first control electrode, and between the third semiconductor layer and the first control electrode. | 03-27-2014 |
20140124832 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode. | 05-08-2014 |
20150243656 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer provided between the first electrode and the second electrode; a second semiconductor layer provided between the first semiconductor layer and the second electrode, and the second semiconductor layer having a lower impurity concentration than the first semiconductor layer; a first semiconductor region provided between part of the second semiconductor layer and the second electrode; a second semiconductor region provided between a portion different from the part of the second semiconductor layer and the second electrode, and the second semiconductor region being in contact with the first semiconductor region; and a third semiconductor region provided between at least part of the first semiconductor region and the second electrode. | 08-27-2015 |
Patent application number | Description | Published |
20140077258 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate having first and second main surfaces, control electrodes disposed in trenches on the first main surface of the semiconductor substrate and extending in a first direction parallel to the first main surface, and control interconnects disposed on the first main surface of the semiconductor substrate and extending in a second direction perpendicular to the first direction. The semiconductor substrate includes a first semiconductor layer of a first conductivity type, second semiconductor layers of a second conductivity type on a surface of the first semiconductor layer on a first main surface side, third semiconductor layers of the first conductivity type disposed on surfaces of the second semiconductor layers on the first main surface side and extending in the second direction, and a fourth semiconductor layer of the second conductivity type on the second main surface of the semiconductor substrate. | 03-20-2014 |
20140077261 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE - An upper part of the termination region of the semiconductor substrate, an upper surface of the first diffusion layers and an upper surface of the first oxide film is etched in such a manner that the level of the upper surface of the semiconductor substrate in the termination region including the first oxide film and the first diffusion layers is lower than the level of the upper surface of the semiconductor substrate in the cell region. Then, a second oxide film is formed on the semiconductor substrate. An electrode is formed on the second oxide film so as to extend from the first region toward the cell region to the first diffusion layers in such a manner that the level of an upper surface of the electrode is lower than the level of the upper surface of the semiconductor substrate in the cell region. | 03-20-2014 |
20140084336 | SEMICONDUCTOR DEVICE - According to one embodiment, an IGBT region includes: a collector layer of a first conductivity type, a drift layer of a second conductivity type, a body layer of the first conductivity type, and a second electrode extending to the drift layer and the body layer via a first insulating film in a stacking direction of a first electrode and the collector layer. A diode region includes: a cathode layer of the second conductivity type, the drift layer, an anode layer of the first conductivity type, and a conductive layer extending to the drift layer and the anode layer via a second insulating film in the stacking direction. The second electrode and the conductive layer are separated from one another at a predetermined distance. | 03-27-2014 |
20140084337 | SEMICONDUCTOR DEVICE - A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode. | 03-27-2014 |
20150069460 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type having first and second faces, and a second semiconductor layer of a second conductivity type disposed above the first face of the first semiconductor layer. The device further includes control electrodes facing the first and second semiconductor layers via insulating layers, and extending to a first direction parallel to the first face of the first semiconductor layer, and third semiconductor layers of the first conductivity type and fourth semiconductor layers of the second conductivity type alternately disposed along the first direction above the second semiconductor layer. The device further includes fifth semiconductor layers of the first conductivity type disposed below the second semiconductor layer or disposed at positions surrounded by the second semiconductor layer, the fifth semiconductor layers being arranged separately from one another along the first direction. | 03-12-2015 |
20150069461 | SEMICONDUCTOR DEVICE - This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base-layer to the first base-layer. A second semiconductor layer of the second conduction type is above an opposite side of the first base-layer to the second base-layer. A plurality of first electrodes are provided at the first semiconductor layer and the second base-layer via first insulating films. A second electrode is provided between adjacent ones of the first electrodes and provided at the first semiconductor layer and the second base-layer via a second insulating film. A resistance of the first base-layer above a side of the second electrode is lower than a resistance of the first base-layer above a side of the first electrodes. | 03-12-2015 |
Patent application number | Description | Published |
20150021655 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a control electrode disposed within and insulated from the first, second, and third semiconductor regions, a first electrode electrically connected with the second and third semiconductor regions, a second electrode, and a fourth semiconductor region of the second conductivity type between the second electrode and the first semiconductor region. The fourth semiconductor region includes a first portion having a first dopant concentration and a second portion having a second dopant concentration higher than the first dopant concentration, and a contact area of the first portion with the second electrode is larger than a contact area of the second area with the second electrode. | 01-22-2015 |
20150091055 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first region of a first conductivity type, a collector electrode electrically connected to a first side of the first region, first and second gate electrodes and first and second conductor electrodes, each of the gate and conductor electrodes extending into the first region from a second side thereof that is opposite to the first side, an emitter electrode electrically connected to the conductor electrodes, and a second region of the first conductivity type, that is adjacent to the gate electrodes, electrically connected to the emitter electrode, and spaced from the first and second conductor electrodes. | 04-02-2015 |