Patent application number | Description | Published |
20080230096 | SUBSTRATE CLEANING DEVICE AND SUBSTRATE PROCESSING APPARATUS - The device forms a flow of a back-side gas over a back-side surface of the end portion of the wafer undergoing a cleaning process executed by radiating an electromagnetic wave such as an ultraviolet ray onto the end portion of the wafer. During the cleaning process, a flow of front-side gas directed along a direction matching the direction of the back-side gas is also formed over the front-side surface of the end portion of the wafer. The flow velocity of the back-side gas is set higher than the flow velocity of the front-side gas. As a result, a descending gas current is created to flow from the wafer front side toward the wafer back side at a gap between the wafer end portion and a partitioning plate, which makes it possible to reliably prevent an active species formed on the back side of the wafer end portion from reaching over to the wafer front side. | 09-25-2008 |
20090065027 | SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD, AND SUBSTRATE TREATMENT APPARATUS - A substrate cleaning apparatus is capable of cleaning an entire periphery of a substrate end portion at a time by simple control without polishing the end portion and without generating plasma. The substrate cleaning apparatus has a mounting table | 03-12-2009 |
20090218483 | Analyzing Method and Analyzing Apparatus - An analysis apparatus includes a first process part for removing a film formed on a substrate by irradiating the film with ultraviolet light, a second process part for providing a solution onto a surface of the substrate for dissolving an object being analyzed on the substrate, and a third process part for analyzing the object being analyzed in the solution that is used in the second step. | 09-03-2009 |
20100043820 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a substrate treatment method intended for a substrate having, on its surface, a composite product of an inorganic material containing silicon oxide and an organic material containing carbon and fluorine. The method comprises: an ultraviolet ray treatment step for irradiating the surface of the substrate with ultraviolet ray to remove a part of the organic material; a hydrogen fluoride processing step which is conducted after the ultraviolet ray processing step and which is for supplying a steam of hydrogen fluoride onto the surface of the substrate to remove at least a part of the inorganic material; and a heating processing step which is conducted after the ultraviolet ray processing step and which is for heating the substrate to cause the shrinkage of a part of the organic material that remains unremoved. | 02-25-2010 |
20110058157 | METHOD OF HELPING PARTICLE DETECTION, METHOD OF PARTICLE DETECTION,APPARATUS FOR HELPING PARTICLE DETECTION,AND SYSTEM FOR PARTICLE DETECTION - A method of helping particle detection and a method of particle detection include an adsorption/infiltration step where an organic gas is brought into contact with organic particles to cause an organic gas component to be adsorbed and infiltrate to the organic particles; a foaming step where a heated gas is brought into contact with the organic particles contacted with the organic gas to foam/expand the organic particles; and an organic-particle detection step where the foamed/expanded organic particles are irradiated with light and light scattered by the organic particles is received to detect the organic particles. Further, the methods include an oxidation step where inorganic particles and the organic particles are oxidized to decompose the organic particles and expand the inorganic particles; and an inorganic particle detection step where the expanded inorganic particles are irradiated with light and light scattered by the inorganic particles is received to detect the inorganic particles. | 03-10-2011 |