Patent application number | Description | Published |
20090173930 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 07-09-2009 |
20100259967 | MEMORY CELL - A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element | 10-14-2010 |
20110140065 | MEMORY ELEMENT AND MEMORY DEVICE - The present invention provides a memory element and a memory device realizing reduced variations in resistance values in an initial state or erase state of a plurality of memory elements and capable of retaining the resistance value in a write/erase state for writing/erasing operations of a plurality of times. The memory element includes a first electrode, a memory layer, and a second electrode in order. The memory layer has: an ion source layer containing at least one of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and at least one metal element selected from copper (Cu), silver (Ag), zinc (Zn), and zirconium (Zr); and two or more high-resistance layers having a resistance value higher than that of the ion source layer and having different compositions. | 06-16-2011 |
20110175049 | MEMORY COMPONENT AND MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side. | 07-21-2011 |
20110194329 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 08-11-2011 |
20120037872 | MEMORY DEVICE - A memory device includes: an amorphous semiconductor layer of a first conduction type; a solid electrolyte layer containing movable ions and provided in contact with a part of one of faces of the amorphous semiconductor layer; a first electrode electrically connected to the amorphous semiconductor layer via the solid electrolyte layer; a second electrode electrically connected to one of the faces of the amorphous semiconductor layer; and a third electrode provided over the other face of the amorphous semiconductor layer with an insulating layer therebetween. At the time of application of voltage to the third electrode, at least a part of the amorphous semiconductor layer reversibly changes to a second conduction type. | 02-16-2012 |
20120037873 | MEMORY DEVICE - A memory device includes: first and second electrodes; a semiconductor layer of a first conduction type provided on the first electrode side; a solid electrolyte layer containing movable ions and provided on the second electrode side; and an amorphous semiconductor layer of a second conduction type which is provided between the semiconductor layer and the solid electrolyte layer so as to be in contact with the solid electrolyte layer and, at the time of application of voltage to the first and second electrodes, reversibly changes to the first conduction type. | 02-16-2012 |
20120069631 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 03-22-2012 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 09-19-2013 |
20140183438 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 07-03-2014 |