Patent application number | Description | Published |
20080211013 | SEMICONDUCTOR MEMORY DEVICE WITH VERTICAL CHANNEL TRANSISTOR AND METHOD OF FABRICATING THE SAME - In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a semiconductor substrate including a plurality of pillars arranged spaced apart from one another, and each of the pillars includes a body portion and a pair of pillar portions extending from the body portion and spaced apart from each other. A gate electrode is formed to surround each of the pillar portions. A bitline is disposed on the body portion to penetrate a region between a pair of the pillar portions of each of the first pillars arranged to extend in a first direction. A wordline is disposed over the bitline, arranged to extend in a second direction intersecting the first direction, and configured to contact the side surface of the gate electrode. A first doped region is formed in the upper surface of each of the pillar portions of the pillar. A second doped region is formed on the body portion of the pillar and connected electrically to the bitline. Storage node electrodes are connected electrically to the first doped region and disposed on each of the pillar portions. | 09-04-2008 |
20100267210 | Semiconductor device and method of fabricating the same - A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers. | 10-21-2010 |
20100283094 | SEMICONDUCTOR DEVICE HAVING VERTICAL TRANSISTOR AND METHOD OF FABRICATING THE SAME - There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures. A bit line separation insulating layer and a peripheral circuit isolation layer are formed inside the bit line separation trench and the peripheral circuit trench, respectively. | 11-11-2010 |
20110186923 | SEMICONDUCTOR MEMORY DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F | 08-04-2011 |
20120273898 | SEMICONDUCTOR MEMORY DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F | 11-01-2012 |
Patent application number | Description | Published |
20090027088 | HIGH RESOLUTION TIME DETECTING APPARATUS USING INTERPOLATION AND TIME DETECTING METHOD USING THE SAME - A high resolution time detecting apparatus using interpolation and a time detecting method using the same are provided. The time detecting apparatus includes a delayer which generates delayed signals by sequentially delaying a reference signal using a plurality of delay elements, a latch unit which outputs latch signals using the delayed signals, and an interpolation unit which outputs interpolated signals using input and output signals of the delay elements. As a result, a high resolution TDC using an interpolation and a time detecting method using the same provide improved performance of digital PLL, high resolution digital signal output at a low power consumption, and controlled circuit size. | 01-29-2009 |
20090153259 | DIGITALLY CONTROLLED OSCILLATOR (DCO) - A digitally controlled oscillator (DCO) includes a current generator which generates an electric current having a magnitude corresponding to an input signal, and a digitally controlled oscillating unit which generates an oscillating frequency based on an inductance which varies according to the magnitude of the electric current generated by the current generator. | 06-18-2009 |
20110260902 | TIME-TO-DIGITAL CONVERTER AND OPERATION METHOD THEREOF - A Time-to-Digital Converter (TDC) is provided. The TDC includes a first TDC unit for receiving a first input signal and a second input signal, delaying the first input signal on a specific time basis using each of first delay blocks, generating first phase-divided signals by performing first phase division on signals of input/output nodes for each of the first delay blocks on a predefined Phase-Interpolation (PI) delay time basis, and outputting the second input signal and a phase-divided signal closest to the second input signal, among the first phase-divided signals, a time amplifier for independently time-amplifying the second input signal and the phase-divided signal closest to the second input signal, and a second TDC unit for delaying a phase-divided signal closest to the time-amplified second input signal on a specific time basis using each of second delay blocks, and generating second phase-divided signals by performing second phase division on signals of input/output nodes for each of the second delay blocks on a predefined PI delay time basis. | 10-27-2011 |
20130043920 | DIGITAL PHASE-LOCKED LOOP APPARATUS USING FREQUENCY SHIFT KEYING AND METHOD OF CONTROLLING THE SAME - A digital phase-locked loop apparatus using FSK includes a PFD detecting phase differences between a reference clock and a frequency-divided signal, and a first adder for generating first digital control codes by adding first digital codes, second digital codes, and channel frequency codes including channel information to each other, the first digital codes being converted from time differences between first and second pulses. The apparatus further includes a digital filter correcting errors of the first digital control codes to generate second digital control codes, a DCO for varying an oscillating frequency in accordance with a digital tuning word based on the second digital control codes, and a dual modulus division unit dividing the oscillating frequency into a frequency-divided signal. | 02-21-2013 |
20130194832 | CONVERTER DRIVING CIRCUIT, DUAL-MODE LLC RESONANT CONVERTER SYSTEM, AND METHOD OF DRIVING DUAL-MODE LLC RESONANT CONVERTER - Disclosed herein are a converter driving circuit for adjusting a variable range of a driving control voltage according to an amplitude and frequency change of a feedback voltage, a dual-mode LLC resonant converter system, and a method of driving the dual-mode LLC resonant converter. | 08-01-2013 |
20140035684 | CONTROL CIRCUIT AND APPARATUS FOR DIGITALLY CONTROLLED OSCILLATOR - There are provided a control circuit for a digitally controlled oscillator and a control apparatus for a digitally controlled oscillator using the same. The control circuit for a digitally controlled oscillator includes: a peak detection circuit detecting amplitude of a signal output from the digitally controlled oscillator; and a transconductance control circuit comparing an output of the peak detection circuit with a predetermined reference signal to control a transconductance value of a negative transconductance circuit included in the digitally controlled oscillator. | 02-06-2014 |
20140190237 | OUTPUT SPECIFICATION CALIBRATING APPARATUS FOR CAPACITIVE PRESSURE SENSOR - An output specification calibrating apparatus for a capacitive pressure sensor. The output specification calibrating apparatus enables adjustment of non-linearity, offset, and gain of the capacitive pressure sensor in a software manner at the time of shipment. Accordingly, it is feasible to easily adjust output specifications of the capacitive pressure sensor and to thereby meet various needs of customers. | 07-10-2014 |
20140319923 | APPARATUS AND METHOD FOR TRANSMITTING WIRELESS POWER - The present invention relates to an apparatus and a method for transmitting wireless power, and more particularly, to an apparatus and a method for transmitting wireless power that rapidly and precisely adjusts impedance so as to transmit desired power. Disclosed an apparatus for transmitting wireless power that performs wireless power transmission, including: an oscillator; an amplifier; an impedance matcher including a matching network which adjusts impedance according to a digital control signal and an analog signal, a sensor, a digital controller which outputs a digital control signal, and generates an analog control start signal when adjustment of the impedance by the digital control signal is completed, and an analog controller which outputs the analog control signal, and a transmitting antenna which radiates the magnetic field by using the transmission power. | 10-30-2014 |