Patent application number | Description | Published |
20120074421 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A source wire is below the passivation film. A gate wire and a relay electrode are above the passivation film. The gate wire is electrically connected to a gate electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the gate wire and the relay electrode and not electrically connected between the gate wire and the relay electrode. The conductive oxide film covers an end portion of the source wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 03-29-2012 |
20120074422 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array device includes a passivation film above first and second bottom gate transistors. A gate wire is below the passivation film. A source wire and a relay wire are above the passivation film. The source wire is electrically connected to a source electrode of the first transistor via a first hole in the passivation film. A conductive oxide film is between the passivation film and both the source wire and the relay electrode and not electrically connected between the source wire and the relay electrode. The conductive oxide film covers an end portion of the gate wire that is exposed via a second hole in the passivation film. The conductive oxide film is between the relay electrode and a current-supply electrode of the second transistor and electrically connects the relay electrode and the current-supply electrode via a third hole in the passivation film. | 03-29-2012 |
20120074423 | EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - An EL display panel includes an organic EL device and a thin film semiconductor unit. The organic EL device includes a lower electrode, an organic light-emitting layer, and an upper electrode. The thin film semiconductor unit includes a first gate electrode, a gate insulating film, a first source electrode, a second drain electrode formed in a same layer as the first source electrode, a first power supply line formed in a same layer as the second drain electrode, and a first interlayer insulating film formed on the first source electrode and the second drain electrode. A gate line connected to the first gate electrode, a second power supply line formed in a same layer as the gate line and connected to the first power supply line, and an auxiliary line formed in a same layer as the second power supply line and connected to the upper electrode are included. | 03-29-2012 |
20120074834 | EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - An EL display panel including an EL unit and a thin film semiconductor unit, in which the EL unit includes an anode electrode, a cathode electrode, and a light-emitting layer, and the thin film semiconductor unit includes a substrate, a gate electrode, a gate insulating film, a semiconductor layer, a first electrode, a second electrode, an interlayer insulating film, a gate line formed above the interlayer insulating film, a power supply line formed above the interlayer insulating film, in a same layer as the gate line, and side-by-side with the gate line, and an auxiliary line formed above the interlayer insulating film, in a same layer as the gate line and the power supply line, and side-by-side with the gate line and the power supply line. | 03-29-2012 |
20120319117 | EL DISPLAY PANEL, EL DISPLAY APPARATUS, AND METHOD OF MANUFACTURING EL DISPLAY PANEL - A light-emitting panel includes a thin film semiconductor that includes a thin film transistor. The thin film transistor includes a gate electrode, a semiconductor layer above the gate electrode, a gate insulating film between the gate electrode and the semiconductor layer, a first electrode electrically connected to the semiconductor layer, and a second electrode. A first interlayer insulating film is above the thin film semiconductor. A gate line and an auxiliary line are above the first interlayer insulating film and between the first interlayer insulating film and a second interlayer insulating film. The gate line is electrically connected to the gate electrode. An electroluminescence emitter includes two electrodes and a light-emitting layer between the two electrodes. One of the two electrodes is connected to the auxiliary line. | 12-20-2012 |
20130001559 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3×10 | 01-03-2013 |
20130075711 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, EL DISPLAY PANEL, AND EL DISPLAY APPARATUS - A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer above the gate electrode; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; a first power supply line electrically connected to the second electrode and in a same layer as the second electrode; and a second power supply line in a same layer as the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the first power supply line and the second power supply line are electrically connected via a second conductive portion. | 03-28-2013 |
20130075745 | THIN-FILM SEMICONDUCTOR DEVICE, DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device includes: a first gate line; a metal line; a first gate electrode extending from the first gate line; a second gate electrode on the first gate electrode; an insulating layer provided in a crossing area where the first gate line and the metal line cross; and a second gate line formed in the same layer as the second gate electrode, and on the first gate line in other than the crossing area, wherein the metal line is on the insulating layer, the second gate line and the second gate electrode are thicker than the first gate line and the first gate electrode, and an interface between the metal line and the insulating layer is positioned above a top surface of the second gate electrode, in a cross section in a direction in which the first and second gate lines extend. | 03-28-2013 |
20130082270 | THIN-FILM TRANSISTOR ARRAY DEVICE, EL DISPLAY PANEL, EL DISPLAY DEVICE, THIN-FILM TRANSISTOR ARRAY DEVICE MANUFACTURING METHOD, EL DISPLAY PANEL MANUFACTURING METHOD - A thin-film transistor array includes first and second bottom-gate transistors, a passivation film, a conductive oxide film below the passivation film, and a relay electrode between a first conductive material in a same layer as a first electrode of the first transistor and a second conductive material in an electroluminescence layer. A first line is in a layer lower than the passivation film and a second line is above the passivation film. A terminal to which an external signal is input is provided in a periphery of the substrate in the same layer as the first electrode. The conductive oxide film covers an upper surface of the terminal and is between the relay electrode and the first conductive material. The relay electrode is formed in a same layer and comprises a same material as the second line. | 04-04-2013 |
20130082271 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, EL DISPLAY PANEL, AND EL DISPLAY APPARATUS - A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer on the gate insulating film; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; and a power supply line in a same layer as the gate line and adjacent to the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the second electrode and the power supply line are electrically connected via a second conductive portion. | 04-04-2013 |
20130105798 | THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE | 05-02-2013 |
Patent application number | Description | Published |
20100220118 | PIXEL CIRCUIT AND DISPLAY APPARATUS - An active matrix display apparatus of the present invention comprises plural gate lines and plural source lines which are arranged such that the plural gate lines respectively intersect the plural source lines and light-emitting element circuits which are provided to respectively correspond to intersections at which the plural gate lines intersect the plural source line, respectively; wherein each of the light-emitting element circuits includes a light-emitting element for emitting light according to a current supplied thereto; a drive transistor for controlling a current supplied to the light-emitting element; and a control transistor for controlling an ON/OFF operation of the drive transistor; wherein the drive transistor has a body terminal and is configured to correct luminance of the light-emitting element using a voltage applied to the body terminal. | 09-02-2010 |
20130119391 | THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR DEVICE - A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film including a channel region which is provided on the gate insulating film; semiconductor films on at least the channel region; an insulating film made of an organic material which is provided over the channel region and above the semiconductor films; a source electrode over at least an end portion of the insulating film; and a drain electrode over at least the other end portion of the insulating film and facing the source electrode. The semiconductor films include at least a first semiconductor film and a second semiconductor film provided on the first semiconductor film. A relationship E | 05-16-2013 |
20130126869 | THIN-FILM TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR DEVICE - A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film above the gate insulating film; a first semiconductor film above the crystalline silicon thin film; a pair of second semiconductor films above the first semiconductor film; a source electrode over one of the second semiconductor films; and a drain electrode over an other one of the second semiconductor films. The first semiconductor film is provided on the crystalline silicon thin film. A relationship E | 05-23-2013 |
20140048807 | METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE AND THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors. | 02-20-2014 |
20140048813 | METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE AND THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode. | 02-20-2014 |
20140054590 | THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device includes: a gate electrode; a channel layer; a first amorphous semiconductor layer; a channel protective layer; a pair of second amorphous semiconductor layers formed on side surfaces of the channel layer; and a pair of contact layers which contacts the side surfaces of the channel layer via the second amorphous semiconductor layers. The gate electrode, the channel layer, the first amorphous semiconductor layer, and the channel protective layer are stacked so as to have outlines that coincide with one another in a top view. The first amorphous semiconductor layer has a density of localized states higher than those of the second amorphous semiconductor layers. The second amorphous semiconductor layers have band gaps larger than that of the first amorphous semiconductor layer. | 02-27-2014 |
20140159044 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed. | 06-12-2014 |
20140254112 | MULTI-LAYERED FILM, ELECTRONIC DEVICE, AND MANUFACTURING METHODS THEREOF - A multi-layered film includes: a plate-like flexible base member; first inorganic members that are each plate-like and arranged on the base member in separation from each other in a direction parallel to a main surface of the base member; a first organic member provided on the base member so as to be positioned between each adjacent two first inorganic members and surround each first inorganic member; a second inorganic member that covers an upper surface and lateral surfaces of the first organic member; and a second organic member that is provided on or above the first inorganic members, and is surrounded by the second inorganic member. Each lateral surface portion of the second inorganic member covering a corresponding lateral surface of the first organic member is thinner than each first inorganic member and each upper surface portion of the second inorganic member covering a corresponding portion of the upper surface. | 09-11-2014 |
20140313241 | DISPLAY DEVICE AND METHOD OF CONTROLLING THE SAME - Pixel circuits of a display device each include: a drive transistor including one of a source and drain connected to a power source line; a capacitive element including a first terminal connected to a gate of the drive transistor; a switching element which switches conduction/non-conduction between a second terminal of the capacitive element and a data line; a switching element which switches conduction/non-conduction between the second terminal of the capacitive element and the source of the drive transistor; a switching element which switches conduction/non-conduction between the first terminal of the capacitive element and a reference voltage line; a light-emitting element including a first terminal connected to the other of the source and drain of the drive transistor and a second terminal connected to another power source line. The reference voltage line provides a forward bias voltage larger than a threshold voltage across the gate and source of the drive transistor. | 10-23-2014 |
20150069391 | THIN-FILM SEMICONDUCTOR SUBSTRATE, LIGHT-EMITTING PANEL, AND METHOD OF MANUFACTURING THE THIN-FILM SEMICONDUCTOR SUBSTRATE - A thin-film semiconductor substrate includes a top-gate first TFT, a top-gate second TFT, and a data line (source line), in which the first TFT has a first semiconductor layer, a first gate insulating film, a first gate electrode, a first source electrode, a first drain electrode, and a first protection layer, the second TFT has a second semiconductor layer, a second gate insulating film, a second gate electrode, a second source electrode, a second drain electrode, and a second protection layer, the data line is connected to the first source electrode, the first drain electrode is an extension of the second gate electrode, and the second gate electrode is thinner than the data line. | 03-12-2015 |
Patent application number | Description | Published |
20080246102 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an Nch transistor having a first gate electrode and a Pch transistor having a second gate electrode. The first gate electrode and the second gate electrode are made of materials causing stresses of different magnitudes. | 10-09-2008 |
20090108368 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A gate electrode of one of an nFET and a pFET includes a metal-containing layer in contact with a gate insulating film and a first silicon-containing layer formed on the metal-containing layer, and a gate electrode of the other FET includes a second silicon-containing layer in contact with a gate insulating film and a third silicon-containing layer formed on the second silicon-containing layer. The first silicon-containing layer and the third silicon-containing layer are formed by the same silicon-containing material film. | 04-30-2009 |
20090200615 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An element larger than silicon is ion-implanted to a contact liner in an N-channel region to break constituent atoms of the contact liner in the N-channel region. An element larger than silicon is ion-implanted to the contact liner in a P-channel region to break constituent atoms of the contact liner, oxygen or the like is ion-implanted. Thereafter, heat treatment is performed to cause shrinkage of the contact liner in the N-channel region to form an n-channel contact liner, and to cause expansion of the contact liner in the P-channel region to form a p-channel contact liner. | 08-13-2009 |
20100078730 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate electrode. The gate electrode includes a silicide layer obtained by siliciding porous silicon or organic silicon. | 04-01-2010 |
20100102396 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness. | 04-29-2010 |
20100203733 | ETCHING METHOD, SEMICONDUCTOR AND FABRICATING METHOD FOR THE SAME - An organic/inorganic hybrid film represented by SiC | 08-12-2010 |
20110227172 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness. | 09-22-2011 |
Patent application number | Description | Published |
20090098413 | DOT-PATTERNED STRUCTURE MAGNETIC RECORDING MEDIUM AND METHOD FOR PRODUCTION THEREOF - Disclosed herein are a dot-patterned structure for magnetic recording bits and a magnetic recording medium provided therewith. The former exhibits high functionality and high performance owing to good crystallinity. The dot-patterned structure is composed of a first layer, which is continuous, and a second layer, which is discrete. The magnetic recording medium having a dot-patterned recording layer is formed by the steps of treating an underlying layer by lithography, thereby forming grooves, filling the grooves by epitaxial growth with the same material as the underlying layer, removing the photoresist used for lithography in a solvent, thereby forming pits, and filling the pits by epitaxial growth with a magnetic film as the recording layer. | 04-16-2009 |
20100177426 | MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDER - A magnetic recording medium for a hard disk drive is provided based on a thermally assisted magnetic recording technique. The magnetic recording medium includes a recording layer and a thermal conduction layer. The thermal conduction layer is formed on the recording layer. The thermal conduction layer is made of materials having different thermal conductivities. The recording layer has data recording regions. First thin films made of a material highest in thermal conductivity among the materials are formed on some portions of the thermal conduction layer, with the some portions being located in association with portions of the data recording regions included in the recording layer. Second thin films made of a material relatively lower in thermal conductivity than the first thin films are formed between respective pairs of the first thin films within the thermal conduction layer. The recording layer includes magnetic particles that are heated and cooled for magnetic recording. The magnetic recording medium ensures the thermal stability of the magnetic particles heated for the magnetic recording and the thermal stability of magnetic particles located near the heated magnetic particles, thereby suppressing disappearance of data. | 07-15-2010 |
20120064374 | Dot-Patterned Structure, Magnetic Recording Medium, and Method for Production Thereof - Disclosed herein are a dot-patterned structure for magnetic recording bits and a magnetic recording medium provided therewith. The former exhibits high functionality and high performance owing to good crystallinity. The dot-patterned structure is composed of a first layer, which is continuous, and a second layer, which is discrete. The magnetic recording medium having a dot-patterned recording layer is formed by the steps of treating an underlying layer by lithography, thereby forming grooves, filling the grooves by epitaxial growth with the same material as the underlying layer, removing the photoresist used for lithography in a solvent, thereby forming pits, and filling the pits by epitaxial growth with a magnetic film as the recording layer. | 03-15-2012 |
20130314165 | SEMICONDUCTOR DEVICE - A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP | 11-28-2013 |