Patent application number | Description | Published |
20110244645 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film. | 10-06-2011 |
20120001223 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device | 01-05-2012 |
20120085986 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE - The light-emitting diode element of this invention includes: an n-type GaN substrate ( | 04-12-2012 |
20120113656 | LIGHT-EMITTING DIODE - A light-emitting diode element includes: an n-type conductive layer | 05-10-2012 |
20130009196 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - A light-emitting diode element disclosed in the present application, comprises a first semiconductor layer made of a gallium nitride-based compound and having first and second front surface regions and a rear surface, a second semiconductor layer at the first front surface region and an active layer interposed therebetween. A first electrode is provided on a principal surface of the second semiconductor layer. A second electrode is provided at the second front surface region. A third electrode is provided on the rear surface. A thorough hole having openings in the second front surface region and the rear surface is provided in the first semiconductor layer, and a conductor portion is provided in the through hole. | 01-10-2013 |
20130168733 | SEMICONDUCTOR-STACKED SUBSTRATE, SEMICONDUCTOR CHIP, AND METHOD FOR PRODUCING SEMICONDUCTOR-STACKED SUBSTRATE - Disclosed is a semiconductor-stacked substrate having a substrate, and a plurality of semiconductor layers which are different in thermal expansion coefficient from the substrate, and are formed in a plurality of regions of a surface of the substrate, respectively. Each semiconductor layer has a growth plane that is a nonpolar plane or a semi-polar plane, and has different thermal expansion coefficients between along a first axis and a second axis orthogonal to each other and parallel to the surface of the substrate. The following mathematical formula 1 is satisfied. D | 07-04-2013 |
20130214288 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10 | 08-22-2013 |
20140110747 | LIGHT-EMITTING DIODE ELEMENT AND LIGHT-EMITTING DIODE DEVICE - Disclosed is a light-emitting diode element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, an active layer. A first electrode is provided on a surface of the second semiconductor layer. A second electrode is provided in a second region of the principal surface of the first semiconductor layer. A conductive layer is arranged such that the conductive layer covers a third region, a fourth region, and a fifth region in the rear surface of the first semiconductor layer. In the rear surface of the first semiconductor layer, the first semiconductor layer includes a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode. The first semiconductor layer is not provided with a through electrode. | 04-24-2014 |